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Ignition Modules Normally-On Switches Solid State Relays Converters Telecommunications Power Supply High Breakdown Voltage: 250V Low On-Resistance: 4 max. at 25ºC Low V GS(off) Voltage: -1.6 to -3.9V Depletion Mode Device Offers Low RDS(on) at Cold Temperatures High Input Impedance Small Package Size: SOT -89 The CPC3703 is an N-channel, depletion mode, field effect transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. Our vertical DMOS process yields a robust device, with high input impedance, for use in high-power applications. The CPC3703 is a highly reliable device that has been used extensively in our Solid State Relays for industrial and telecommunications applications. This device excels in power applications that require low drain-source resistance, particularly in cold environments such as automotive ignition modules. The CPC3703 offers a low, 4 maximum, on-state resistance at 25ºC. The CPC3703 has a minimum breakdown voltage of 250V, and is available in an SOT -89 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown. Package Pinout (SOT -89) G D S D S G D Part # Description CPC3703CTR N-Channel Depletion Mode FET , SOT -89 Pkg. T ape and Reel (1000/Reel)
INTEGRATED CIRCUITS DIVISION www.ixysic.com2 R07 CPC3703 Absolute Maximum Ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device. Functional operation of the device at conditions beyond those indicated in the operational sections of this data sheet is not implied. Absolute Maximum Ratings @ 25ºC (Unless Otherwise Noted) Electrical Characteristics @ 25ºC (Unless Otherwise Noted) Parameter Ratings Units Drain-to-Source Voltage 250 V P Gate-to-Source Voltage ±15 V P Pulsed Drain Current 600 mA T otal Package Dissipation 1 1.1 W Junction T emperature 125 ºC Operational T emperature, Ambient -55 to +125 ºC Storage T emperature -55 to +125 ºC 1 Mounted on 1"x1"x0.062" FR4 board. Parameter Symbol Conditions Min Typ Max Units Drain-to-Source Breakdown Voltage V (BR)DSX VGS= -5V , ID=100µA 250 - - V Gate-to-Source Off Voltage V GS(off) VDS= 5V , ID=1mA -1.6 - -3.9 V Change in VGS(off) with T emperature dV GS(off) /dT V DS= 5V , ID=1A - - 4.5 mV/ ºC Gate Body Leakage Current I GSS VGS=±15V , VDS=0V - - 100 nA Drain-to-Source Leakage Current I D(off) VGS= -5V , VDS=250V - - 1 µA VGS= -5V , VDS=200V , TA=125ºC - - 1 mA Saturated Drain-to-Source Current I DSS VGS= 0V , VDS=15V 360 - - mA Static Drain-to-Source On-State Resistance RDS(on) VGS= 0V , ID=200mA -- 4 Change in RDS(on) with T emperature dR DS(on) /dT - - 1.1 %/ ºC Forward T ransconductance G FS ID= 100mA, VDS = 10V 225 - - m Input Capacitance C ISS VGS= -5V VDS= 25V f= 1MHz 327 350 pFCommon Source Output Capacitance C OSS 51 65 Reverse T ransfer Capacitance C RSS 27 35 T urn-On Delay Time t d(on) VDD= 25V ID= 150mA VGS= 0V to -10V Rgen= 50 23 35 ns Rise Time t r 82 0 T urn-Off Delay Time t d(off) 17 25 Fall Time t f 70 80 Source-Drain Diode Voltage Drop V SD VGS= -5V , ISD=150mA - 0.6 1.8 V Thermal Resistance (Junction to Ambient) R JA - - 90 - ºC/W Switching Waveform & Test Circuit 90% 10% 90% 90% 10%10% PULSE GENERATOR VDD RL OUTPUT D.U.T. ton td(on) toff td(off) INPUT INPUT OUTPUT VDS Rgen -10V tf tr
INTEGRATED CIRCUITS DIVISION CPC3703 www.ixysic.com 3R07 PERFORMANCE DATA (@25ºC Unless Otherwise Noted)* *The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifi cations, please contact our application department. Output Characteristics VDS (V) ID (mA) 012345 1000 900 800 700 600 500 400 300 200 100 VGS=-1.0 VGS=-2.5 VGS=-2.0 VGS=-1.5 Instantaneous Transfer Characteristics (VDS=5V, TA=TJ) VGS (V) ID (mA) 350 300 250 200 150 100 +125ºC -55ºC +25ºC RDS(on) Vs. Temperature (VGS=0V, ID=200mA) -50 0 50 100 150 RDS(on) (:) Temperature (ºC) VGS(off) Vs. Temperature (VDS=10V, ID=1mA) VGS(off) (V) -50 0 50 100 150 -2.0 -2.5 -3.0 -3.5 -4.0 Temperature (ºC) VDS (V) 0.1 1 10 100 1000 ID (A) 0.001 0.01 0.1 Maximum Rated Safe Operating Area Transconductance vs. Drain Current (VDS=10V, TA=TJ) ID (mA) 01 02 03 04 0 300 250 200 150 100 50 60 70 80 10090 GFS (m ): -55ºC +125ºC +25ºC Temperature (ºC) 0 20 40 60 80 100 120 140 Power Dissipation (W) Power Dissipation vs. Ambient Temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Capacitance vs. Drain-Source Voltage (VGS=-5V) VDS (V) Capacitance (pF) 01 02 03 04 0 600 525 450 375 300 225 150 CRSS COSS CISS On-Resistance vs. Drain Current (VGS=0V) ID (A) 0 0.1 0.2 0.3 0.4 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 RDS(on) (:)
INTEGRATED CIRCUITS DIVISION www.ixysic.com4 R07 CPC3703 Manufacturing Information Moisture Sensitivity All plastic encapsulated semiconductor packages are susceptible to moisture ingression. IXYS Integrated Circuits Division classified all of its plastic encapsulated devices for moisture sensitivity according to the latest version of the joint industry standard, IPC/JEDEC J-STD-020, in force at the time of product evaluation. We test all of our products to the maximum conditions set forth in the standard, and guarantee proper operation of our devices when handled according to the limitations and information in that standard as well as to any limitations set forth in the information or standards referenced below. Failure to adhere to the warnings or limitations as established by the listed specifications could result in reduced product performance, reduction of operable life, and/or reduction of overall reliability. This product carries a Moisture Sensitivity Level (MSL) rating as shown below, and should be handled according to the requirements of the latest version of the joint industry standard IPC/JEDEC J-STD-033. Device Moisture Sensitivity Level (MSL) Rating CPC3703C MSL 1 ESD Sensitivity This product is ESD Sensitive, and should be handled according to the industry standard JESD-625. Reflow Profile This product has a maximum body temperature and time rating as shown below. All other guidelines of J-STD-020 must be observed. Device Maximum Temperature x Time CPC3703C 260ºC for 30 seconds Board Wash IXYS Integrated Circuits Division recommends the use of no-clean flux formulations. However, board washing to remove flux residue is acceptable, and the use of a short drying bake may be necessary. Chlorine-based or Fluorine-based solvents or fluxes should not be used. Cleaning methods that employ ultrasonic energy should not be used.
INTEGRATED CIRCUITS DIVISION IXYS Integrated Circuits Division makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make changes to specifications and product descriptions at any time without notice. Neither circuit patent licenses nor indemnity are expressed or implied. Except as set forth in IXYS Integrated Circuits Division’s Standard Terms and Conditions of Sale, IXYS Integrated Circuits Division assumes no liability whatsoever, and disclaims any express or implied warranty, relating to its products including, but not limited to, the implied warranty of merchantability, fitness for a particular purpose, or infringement of any intellectual property right. The products described in this document are not designed, intended, authorized or warranted for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or where malfunction of IXYS Integrated Circuits Division’s product may result in direct physical harm, injury, or death to a person or severe property or environmental damage. IXYS Integrated Circuits Division reserves the right to discontinue or make changes to its products at any time without notice. Specification: DS-CPC3703-R07 ©Copyright 2014, IXYS Integrated Circuits Division All rights reserved. Printed in USA. 8/1/2014 For additional information please visit our website at: www.ixysic.com CPC3703 Mechanical Dimensions Dimensions mm MIN / mm MAX (inches MIN / inches MAX) 2.286 / 2.591 (0.090 / 0.102) 3.937 / 4.242 (0.155 / 0.167) 1.397 / 1.600 (0.055 / 0.063) 0.356 / 0.432 (0.014 / 0.017) 1.626 / 1.829 (0.064 / 0.072) R 0.254 (R 0.010) 0.889 / 1.194 (0.035 / 0.047) 0.356 / 0.483 (0.014 / 0.019) 0.432 / 0.559 (0.017 / 0.022) 4.394 / 4.597 (0.173 / 0.181) 1.422 / 1.575 (0.056 / 0.062) 2.921 / 3.073 (0.115 / 0.121) 0.60 (0.024) TYP 3 1.40 (0.055) 2.45 (0.096) 1.90 (0.075) 1.90 (0.074) 5.00 (0.197) 50º PCB Land Pattern Pin 1 1.118 / 1.270 0.432 / 0.508 (0.017 / 0.020) 0.864 / 1.016 (0.034 / 0.040) 2.845 / 2.997 (0.112 / 0.118) 45º CPC3703C CPC3703CTR Tape & Reel Dimensions mm (inches)Embossment Embossed Carrier
177.8 Dia
(7.00 Dia) Top Cover Tape Thickness
0.102 Max
(0.004 Max) W=12.00 ± 0.3 (0.472 ± 0.012) B0=4.60 ± 0.1 (0.181 ± 0.004) A0=4.80 ± 0.1 (0.189 ± 0.004) P=8.00 ± 0.1 (0.315 ± 0.004) K0=1.80 ± 0.1 (0.071 ± 0.004) 2.00 ± 0.05 (0.079 ± 0.002) 4.00 ± 0.1 (0.157 ± 0.004) 1.75 ± 0.1 (0.069 ± 0.004) 5.50 ± 0.05 (0.217 ± 0.002)