CME30E1600PZ IXYS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

Backside: anode TAV TV V 1.96 RRM 1600 V = V I = A H3B ESD Level: Features / Advantages: Applications: Package:

  • Thyristor for line and moderate frequencies
  • Short turn-off time
  • Planar passivated chip
  • Long-term stability
  • Line rectifying 50/60 Hz
  • Softstart AC motor control
  • DC Motor control
  • Power converter
  • AC power control
  • Lighting and temperature control TO-263 (D2Pak-HV)
  • Industry standard outline
  • RoHS compliant
  • Epoxy meets UL 94V-0
  • High creepage distance between terminals The data contained in this product data sheet is ex clusively intended for technically trained staff. T he user will have to evaluate the suitability of th e product for the intended application and the completeness of the product data with respect to his application. The specifications of our compon ents may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require produc t information in excess of the data given in this p roduct data sheet or which concerns the specific application of your product, please co ntact the sales office, which is responsible for yo u. Due to technical requirements our product may conta in dangerous substances. For information on the typ es in question please contact the sales office, whi ch is responsible for you. Should you intend to use the product in aviation, i n health or live endangering or life support applic ations, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. Terms Conditions of usage: IXYS reserves the right to change limits, condition s and dimensions. 20160718c Data according to IEC 60747and per semiconductor un less otherwise specified © 2016 IXYS all rights reserved

V = V A²s A²s A²s A²s Symbol Definition Ratings typ. max. I V I A VT 1.92 R 0.75 K/W min. V V

50 T = 25°C VJ

T = °C VJ mA 2V = V T = 25°C VJ I = A T V T = °C C 80 Ptot 165 WT = 25°C C 1600 forward voltage drop total power dissipation Conditions Unit 2.47 T = 25°C VJ 125 VT0 V1.23 T = °C VJ 150 rT 25 mΩ V1.96 T = °C VJ I = A T V 2.68 I = A 60 I = A 60 threshold voltage slope resistance for power loss calculation only µA 125 V V1600 T = 25°C VJ PGM Wt = 30 µs 10 max. gate power dissipation P T = °C C 150 Wt = 5P PGAV W0.5 average gate power dissipation CJ 13 junction capacitance V = V 400 T = 25°C f = 1 MHz R VJ pF ITSM t = 10 ms; (50 Hz), sine T = 45°C VJ max. forward surge current T = °C VJ 150 I²t T = 45°C value for fusing T = °C 150 V = 0 V R V = 0 V R V = 0 V V = 0 V t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine VJ R VJ R thJC thermal resistance junction to case T = °C VJ 150 260 280 240 240 A A A A 220 240 340 325 1600 300 µs TAV 180° sine average forward current (di/dt) cr A/µs 150 repetitive, I = TVJ = 125°C; f = 50 Hz critical rate of rise of current VGT gate trigger voltage V = 6 V T = °C 25 (dv/dt) T = 125°C critical rate of rise of voltage A/µs 500 V/µs t = µs; I A; V = ⅔ V R = ∞; method 1 (linear voltage rise) VJ D VJ 90 AT P G = 0.2 di /dt A/µs; G = 0.2 DRM cr V = ⅔ V DRM GK 500 1.3 V T = °C -40 VJ IGT gate trigger current V = 6 V T = °C 25 D VJ 50 mA T = °C -40 VJ 1.6 V 80 mA VGD gate non-trigger voltage T = °C VJ 0.2 V IGD gate non-trigger current 1 mA V = ⅔ V D DRM 150 latching current T = °C VJ 120 mA IL 25 t µs p = 10 I A; G = 0.2 di /dt A/µs G = 0.2 holding current T = °C VJ 90 mA IH 25 V = 6 V D R = ∞GK gate controlled delay time T = °C VJ 2 µs tgd 25 I A; G = 0.5 di /dt A/µs G = 0.5 V = ½ V D DRM turn-off time T = °C VJ 120 µs tq di/dt = A/µs 10 dv/dt = V/µs 1000 V = R 20 V; I A; T = 30 V = ⅔ V DRM t µs p = 200 non-repet., I = 30 AT 125 RthCH thermal resistance case to heatsink K/W Thyristor 1700 RRM/DRM RSM/DSM max. non-repetitive reverse/forward blocking voltage max. repetitive reverse/forward blocking voltage R/D reverse current, drain current T T R/D R/D 200 0.25 IXYS reserves the right to change limits, condition s and dimensions. 20160718c Data according to IEC 60747and per semiconductor un less otherwise specified © 2016 IXYS all rights reserved

Part No. Logo Assembly Code XXXXXXXXX IXYS Zyyww 000000 Assembly Line C M E E 1600 PZ Part description Thyristor (SCR) Thyristor Semifast (up to 1800V) Single Thyristor TO-263AB (D2Pak) (2HV) Current Rating [A] Reverse Voltage [V] Package Top °C TVJ °C 150 virtual junction temperature -40 Weight g1.5 Symbol Definition typ. max. min. Conditions operation temperature Unit FC N60 mounting force with clip 20 mm mm 4.2 4.7 dSpp/App creepage distance on surface | striking distance th rough air dSpb/Apb terminal to backside IRMS RMS current 35 Aper terminal 125 -40 terminal to terminal TO-263 (D2Pak-HV) Delivery Mode Quantity Code No. Ordering Number Marking on Product Ordering CME30E1600PZ 512781 Tape & Reel 800 CME30E1600PZ Standard Tstg °C 150 storage temperature -40 threshold voltage V1.23 mΩ V0 max R0 max slope resistance * 22 Equivalent Circuits for Simulation T = VJ I V0 R0 Thyristor 150 °C * on die level IXYS reserves the right to change limits, condition s and dimensions. 20160718c Data according to IEC 60747and per semiconductor un less otherwise specified © 2016 IXYS all rights reserved

W A c L 2x b2 2x b H Supplier Option E 2x e L1 D min max min max A 4.06 4.83 0.160 0.190 b 0.51 0.99 0.020 0.039 b2 1.14 1.40 0.045 0.055 c 0.40 0.74 0.016 0.029 c2 1.14 1.40 0.045 0.055 D 8.38 9.40 0.330 0.370 D1 8.00 8.89 0.315 0.350 E 9.65 10.41 0.380 0.410 E1 6.22 8.50 0.245 0.335 e H 14.61 15.88 0.575 0.625 L 1.78 2.79 0.070 0.110 L1 1.02 1.68 0.040 0.066 W typ. 0.02 0.040 typ. 0.0008 0.002 All dimensions conform w ith and/or w ithin JEDEC standa rd. 2.3 0.091 2,54 BSC 0,100 BSC 4.28 0.169 Dim. Millimeter Inches typ. 0.10 typ. 0.004 2.41 0.095 3.81 (0.150) 1.78 (0.07) 2.54 (0.100) 3.05 (0.120) 10.92 (0.430) 9.02 (0.355) mm (Inches) Recommended min. foot print 4 1 Outlines TO-263 (D2Pak-HV) IXYS reserves the right to change limits, condition s and dimensions. 20160718c Data according to IEC 60747and per semiconductor un less otherwise specified © 2016 IXYS all rights reserved

0.01 0.1 1 100 150 200 250 1 10 100 1000 10000 0.0 0.2 0.4 0.6 0.8 IT [A] t [s]VT [V] 2 3 4 5 6 7 8 9 0 11 100 1000 I2t [A 2s] t [ms] ITSM [A] TVJ = 125°C TVJ = 45°C

50 Hz, 80% VRRM

TVJ = 125°C TVJ = 45°C VR = 0 V IT(AV)M [A] Tcase [°C] ZthJC [K/W] t [ms] Fig. 1 Forward characteristics Fig. 2 Surge overload current ITSM: crest value, t: duration Fig. 3 I 2t versus time (1-10 s) Fig. 4 Gate voltage & gate current Triggering: A = no; B = possible; C = safe Fig. 6 Max. forward current at case temperature Fig. 7 Transient thermal impedance junction to case Fig. 5 Gate controlled delay time t gd 0 10 20 IT(AV) [A] P(AV) [W] Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature 0 50 100 150 Tamb [°C] RthHA 0.6 0.8 1.0 2.0 4.0 8.0 dc = 0.5 0.4 0.33 0.17 0.08 dc = 0.5 0.4 0.33 0.17 0.08 TVJ = 125°C 150°C 0 25 50 75 VG [V] IG [mA] IGD: TVJ = 125°C IGD: TVJ = 25°C IGD: TVJ = 25°C IGD: TVJ = 0°C IGD: TVJ = -40°C A B B B C 10 -2 10 -1 100 10 1 10 -1 10 0 10 1 10 2 tgd [µs] IG [A] lim. typ. TVJ = 125°C TVJ = 25°C Rthi [K/W] t i [s] 0.05 0.01 0.08 0.0010 0.25 0.020 0.15 0.25 0.22 0.13 Thyristor IXYS reserves the right to change limits, condition s and dimensions. 20160718c Data according to IEC 60747and per semiconductor un less otherwise specified © 2016 IXYS all rights reserved