CMA60MT1600NHB IXYS | Alldatasheet

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1~ Triac Three Quadrants operation: QI - QIII Thyristor Part number CMA60MT1600NHB Backside:Terminal 2 Negative Half Cycle Positive Half Cycle QII QI QIII QIV IGT - + IGT Three Quadr ant s Operation Note: All Polarities are referenced to T1 REF (-) IGT REF (-) IGT REF (+) IGT TAV TV V 1.35 RRM 1600 V = V I = A Features / Advantages: Applications: Package:

  • Triac for line frequency
  • Three Quadrants Operation - QI - QIII
  • Planar passivated chip
  • Long-term stability of blocking currents and voltages
  • Line rectifying 50/60 Hz
  • Softstart AC motor control
  • DC Motor control
  • Power converter
  • AC power control
  • Lighting and temperature control TO-247
  • Industry standard outline
  • RoHS compliant
  • Epoxy meets UL 94V-0 The data contained in this product data sheet is ex clusively intended for technically trained staff. T he user will have to evaluate the suitability of th e product for the intended application and the completeness of the product data with respect to his application. The specifications of our compon ents may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require produc t information in excess of the data given in this p roduct data sheet or which concerns the specific application of your product, please co ntact your local sales office. Due to technical requirements our product may conta in dangerous substances. For information on the typ es in question please contact your local sales offi ce. Should you intend to use the product in aviation, i n health or life endangering or life support applic ations, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. Terms and Conditions of Usage IXYS reserves the right to change limits, condition s and dimensions. 20170807c Data according to IEC 60747and per semiconductor un less otherwise specified © 2017 IXYS all rights reserved

V = V A²s A²s A²s A²s Symbol Definition Ratings typ. max. I V I A VT 1.36 R 0.55 K/W min. V V

10 T = 25°C VJ

T = °C VJ mA 2V = V T = 25°C VJ I = A T V T = °C C 115 Ptot 230 WT = 25°C C 1600 forward voltage drop total power dissipation Conditions Unit 1.70 T = 25°C VJ 125 VT0 V0.89 T = °C VJ 150 rT 15.1 mΩ V1.35 T = °C VJ I = A T V 1.79 I = A 60 I = A 60 threshold voltage slope resistance for power loss calculation only µA 125 V V1600 T = 25°C VJ I A66 PGM Wt = 30 µs 10 max. gate power dissipation P T = °C C 150 Wt = 5P PGAV W0.5 average gate power dissipation CJ 9junction capacitance V = V 400 T = 25°C f = 1 MHz R VJ pF ITSM t = 10 ms; (50 Hz), sine T = 45°C VJ max. forward surge current T = °C VJ 150 I²t T = 45°C value for fusing T = °C 150 V = 0 V R V = 0 V R V = 0 V V = 0 V t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine VJ R VJ R thJC thermal resistance junction to case T = °C VJ 150 260 280 240 240 A A A A 220 240 340 325 1600 300 µs RMS forward current per phase RMS TAV 180° sine average forward current (di/dt) cr A/µs 150 repetitive, I = TVJ = 125°C; f = 50 Hz critical rate of rise of current VGT gate trigger voltage V = 6 V T = °C 25 (dv/dt) T = 125°C critical rate of rise of voltage A/µs 500 V/µs t = µs; I A; V = ⅔ V R = ∞; method 1 (linear voltage rise) VJ D VJ 90 AT P G = 0.2 di /dt A/µs; G = 0.2 DRM cr V = ⅔ V DRM GK 500 1.3 V T = °C -40 VJ IGT gate trigger current V = 6 V T = °C 25 D VJ ± 60 mA T = °C -40 VJ 1.6 V ± 80 mA VGD gate non-trigger voltage T = °C VJ 0.2 V IGD gate non-trigger current ± 1 mA V = ⅔ V D DRM 125 latching current T = °C VJ 90 mA IL 25 t µs p = 10 I A; G = 0.2 di /dt A/µs G = 0.2 holding current T = °C VJ 60 mA IH 25 V = 6 V D R = ∞GK gate controlled delay time T = °C VJ 2 µs tgd 25 I A; G = 0.5 di /dt A/µs G = 0.5 V = ½ V D DRM turn-off time T = °C VJ 150 µs tq di/dt = A/µs 10 dv/dt = V/µs 20 V = R 100 V; I A; T = 30 V = ⅔ V DRM t µs p = 200 non-repet., I = 30 AT 125 RthCH thermal resistance case to heatsink K/W Rectifier 1700 RRM/DRM RSM/DSM max. non-repetitive reverse/forward blocking voltage max. repetitive reverse/forward blocking voltage R/D reverse current, drain current T T R/D R/D 200 0.25 IXYS reserves the right to change limits, condition s and dimensions. 20170807c Data according to IEC 60747and per semiconductor un less otherwise specified © 2017 IXYS all rights reserved

Part No. Logo IXYS abcd Assembly Code Zyyww Assembly Line XXXXXXXXX C M A MT 1600 N HB Part description Thyristor (SCR) Thyristor (up to 1800V) 1~ Triac Three Quadrants operation: QI - QIII TO-247AD (3) Current Rating [A] Reverse Voltage [V] Package Top °C MD Nm 1.2 mounting torque 0.8 TVJ °C 150 virtual junction temperature -40 Weight g6 Symbol Definition typ. max. min. Conditions operation temperature Unit FC N120 mounting force with clip 20 IRMS RMS current 70 Aper terminal 125 -40 TO-247 Similar Part Package Voltage class CMA60MT1600NHR ISO247 (3) 1600 Delivery Mode Quantity Code No. Ordering Number Marking on Product Ordering CMA60MT1600NHB 516795 Tube 30 CMA60MT1600NHB Standard Tstg °C 150 storage temperature -40 threshold voltage V0.89 mΩ V0 max R0 max slope resistance * 12.6 Equivalent Circuits for Simulation T = VJ I V0 R0 Thyristor 150 °C * on die level IXYS reserves the right to change limits, condition s and dimensions. 20170807c Data according to IEC 60747and per semiconductor un less otherwise specified © 2017 IXYS all rights reserved

S Ø P Ø P1 D2 1 2 3 L 2x b2 3x b 2x e 2x E2 D E Q A A2 C Sym. Inches Millimeter min. max. min. max. A 0.185 0.209 4.70 5.30 A1 0.087 0.102 2.21 2.59 A2 0.059 0.098 1.50 2.49 D 0.819 0.845 20.79 21.45 E 0.610 0.640 15.48 16.24 E2 0.170 0.216 4.31 5.48 e 0.215 BSC 5.46 BSC L 0.780 0.800 19.80 20.30 L1 - 0.177 - 4.49 Ø P 0.140 0.144 3.55 3.65 Q 0.212 0.244 5.38 6.19 S 0.242 BSC 6.14 BSC b 0.039 0.055 0.99 1.40 b2 0.065 0.094 1.65 2.39 b4 0.102 0.135 2.59 3.43 c 0.015 0.035 0.38 0.89 D1 0.515 - 13.07 - D2 0.020 0.053 0.51 1.35 E1 0.530 - 13.45 - Ø P1 - 0.29 - 7.39 Outlines TO-247 IXYS reserves the right to change limits, condition s and dimensions. 20170807c Data according to IEC 60747and per semiconductor un less otherwise specified © 2017 IXYS all rights reserved

0.01 0.1 1 100 200 300 1 10 100 1000 10000 0.0 0.2 0.4 0.6 IT [A] t [s]VT [V] 2 3 4 5 6 7 8 9 0 11 100 1000 I2t [A2s] t [ms] ITSM [A] TVJ = 25°C TVJ = 125°C TVJ = 45°C

50 Hz, 80% VRRM

TVJ = 125°C TVJ = 45°C VR = 0 V VG [V] IG [mA] IT(AV)M [A] Tcase [°C] ZthJC [K/W] t [ms] Fig. 1 Forward characteristics Fig. 2 Surge overload current ITSM: crest value, t: duration Fig. 3 I 2t versus time (1-10 s) Fig. 4 Gate voltage & gate current Fig. 6 Max. forward current at case temperature Fig. 8 Transient thermal impedance junction to case tgd [µs] IG [mA] lim. typ. Fig. 5 Gate controlled delay time t gd 0 10 20 30 IT(AV) [A] P(AV) [W] Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature 0 50 100 150 Tamb [°C] TVJ = 125°C dc = 0.5 0.4 0.33 0.17 0.08 dc = 0.5 0.4 0.33 0.17 0.08 1 10 100 1000 10000 0.1 1: IGD, TVJ = 150°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C i R thi (K/W) ti (s) 1 0.080 0.0100 2 0.060 0.0001 3 0.215 0.0200 4 0.060 0.2000 5 0.135 0.1100 4: PGAV= 0.5 W 5: PGM = 5 W 6: PGM = 10 W RthHA 0.6 0.8 1.0 2.0 4.0 8.0 TVJ = 150°C TVJ = 125°C Thyristor IXYS reserves the right to change limits, condition s and dimensions. 20170807c Data according to IEC 60747and per semiconductor un less otherwise specified © 2017 IXYS all rights reserved