CMA30P1600FC IXYS | Alldatasheet

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Backside: Isolated TAV TV V 1,3 RRM 1600 V = V I = A Features / Advantages: Applications: Package:

  • Thyristor for line frequency
  • Planar passivated chip
  • Long-term stability
  • Line rectifying 50/60 Hz
  • Softstart AC motor control
  • DC Motor control
  • Power converter
  • AC power control
  • Lighting and temperature control i4-Pac
  • Industry convenient outline
  • RoHS compliant
  • Epoxy meets UL 94V-0
  • Soldering pins for PCB mounting
  • Backside: DCB ceramic
  • Reduced weight
  • Advanced power cycling
  • Isolation Voltage: V~ 3000 The data contained in this product data sheet is ex clusively intended for technically trained staff. T he user will have to evaluate the suitability of th e product for the intended application and the completeness of the product data with respect to his application. The specifications of our compon ents may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require produc t information in excess of the data given in this p roduct data sheet or which concerns the specific application of your product, please co ntact the sales office, which is responsible for yo u. Due to technical requirements our product may conta in dangerous substances. For information on the typ es in question please contact the sales office, whi ch is responsible for you. Should you intend to use the product in aviation, i n health or live endangering or life support applic ations, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. Terms Conditions of usage: IXYS reserves the right to change limits, condition s and dimensions. 20150827b Data according to IEC 60747and per semiconductor un less otherwise specified © 2015 IXYS all rights reserved

V = V A²s A²s A²s A²s Symbol Definition Ratings typ. max. I V I A VT 1,30 R 1 K/W min. V V

50 T = 25°C VJ

T = °C VJ mA 2V = V T = 25°C VJ I = A T V T = °C C 90 Ptot 125 WT = 25°C C 1600 forward voltage drop total power dissipation Conditions Unit 1,63 T = 25°C VJ 125 VT0 V0,87 T = °C VJ 150 rT 14,2 mΩ V1,30 T = °C VJ I = A T V 1,71 I = A 60 I = A 60 threshold voltage slope resistance for power loss calculation only µA 125 V V1600 T = 25°C VJ I A47 PGM Wt = 30 µs 10 max. gate power dissipation P T = °C C 150 Wt = 5P PGAV W0,5 average gate power dissipation CJ 16 junction capacitance V = V 400 T = 25°C f = 1 MHz R VJ pF ITSM t = 10 ms; (50 Hz), sine T = 45°C VJ max. forward surge current T = °C VJ 150 I²t T = 45°C value for fusing T = °C 150 V = 0 V R V = 0 V R V = 0 V V = 0 V t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine VJ R VJ R thJC thermal resistance junction to case T = °C VJ 150 400 430 580 555 A A A A 340 365 800 770 1600 300 µs RMS forward current T(RMS) TAV 180° sine average forward current (di/dt) cr A/µs 150 repetitive, I = TVJ = 125°C; f = 50 Hz critical rate of rise of current VGT gate trigger voltage V = 6 V T = °C 25 (dv/dt) T = 125°C critical rate of rise of voltage A/µs 500 V/µs t = µs; I A; V = ⅔ V R = ∞; method 1 (linear voltage rise) VJ D VJ 90 AT P G = 0,3 di /dt A/µs; G = 0,3 DRM cr V = ⅔ V DRM GK 1000 1 V T = °C -40 VJ IGT gate trigger current V = 6 V T = °C 25 D VJ 55 mA T = °C -40 VJ 1,2 V 80 mA VGD gate non-trigger voltage T = °C VJ 0,2 V IGD gate non-trigger current 5 mA V = ⅔ V D DRM 150 latching current T = °C VJ 150 mA IL 25 t µs p = 10 I A; G = 0,3 di /dt A/µs G = 0,3 holding current T = °C VJ 100 mA IH 25 V = 6 V D R = ∞GK gate controlled delay time T = °C VJ 2 µs tgd 25 I A; G = 0,5 di /dt A/µs G = 0,5 V = ½ V D DRM turn-off time T = °C VJ 150 µs tq di/dt = A/µs 15 dv/dt = V/µs 20 V = R 100 V; I A; T = 30 V = ⅔ V DRM t µs p = 200 non-repet., I = 30 AT 125 RthCH thermal resistance case to heatsink K/W Thyristor 1700 RRM/DRM RSM/DSM max. non-repetitive reverse/forward blocking voltage max. repetitive reverse/forward blocking voltage R/D reverse current, drain current T T R/D R/D 200 0,20 IXYS reserves the right to change limits, condition s and dimensions. 20150827b Data according to IEC 60747and per semiconductor un less otherwise specified © 2015 IXYS all rights reserved

Part No. Logo UL listed IXYS Assembly Code Assembly Line ISOPLUS® XXXXXXXXX abcd Zyyww C M A P 1600 FC Part description Thyristor (SCR) Thyristor (up to 1800V) Phase leg i4-Pac (5) Current Rating [A] Reverse Voltage [V] Package Top °C TVJ °C 150 virtual junction temperature -40 Weight g9 Symbol Definition typ. max. min. Conditions operation temperature Unit FC N120 mounting force with clip 20 V Vt = 1 second Vt = 1 minute isolation voltage mm mm 1,7 5,1 dSpp/App creepage distance on surface | striking distance th rough air dSpb/Apb terminal to backside IRMS RMS current 70 Aper terminal 125 -40 terminal to terminal i4-Pac Similar Part Package Voltage class CMA50P1600FC i4-Pac (5) 1600 Delivery Mode Quantity Code No. Ordering Number Marking on Product Ordering 50/60 Hz, RMS; I ≤ 1 mA ISOL CMA30P1600FC 507440 Tube 25 CMA30P1600FC Standard

3000 ISOL

Tstg °C 150 storage temperature -40 2500 threshold voltage V0,87 mΩ V0 max R0 max slope resistance * 11,7 Equivalent Circuits for Simulation T = VJ I V0 R0 Thyristor 150 °C * on die level IXYS reserves the right to change limits, condition s and dimensions. 20150827b Data according to IEC 60747and per semiconductor un less otherwise specified © 2015 IXYS all rights reserved

E W A c 4x b2 5x b L D R Q 1 2 5 3 4 Die kon vexe Form des Subs trates i st t yp. < 0.05 mm übe r der Kunststoffoberfläche der Bauteilunterseite The convexbow of substrate is typ. < 0.05 mm over plastic surface level ofdevice bottom side min max min max A 4.83 5.21 0.190 0.205 A1 2.59 3.00 0.102 0.118 A2 1.17 2.16 0.046 0.085 b 1.14 1.40 0.045 0.055 b2 1.47 1.73 0.058 0.068 b4 2.54 2.79 0.100 0.110 c 0.51 0.74 0.020 0.029 D 20.80 21.34 0.819 0.840 D1 14.99 15.75 0.590 0.620 D2 1.65 2.03 0.065 0.080 D3 20.30 20.70 0.799 0.815 E 19.56 20.29 0.770 0.799 E1 16.76 17.53 0.660 0.690 e 3.81 BSC 0.150 BSC L 19.81 21.34 0.780 0.840 L1 2.11 2.59 0.083 0.102 Q 5.33 6.20 0.210 0.244 R 2.54 4.57 0.100 0.180 W - 0.10 - 0.004 Di m. Millimeter Inches 2 4 31 5 Outlines i4-Pac IXYS reserves the right to change limits, condition s and dimensions. 20150827b Data according to IEC 60747and per semiconductor un less otherwise specified © 2015 IXYS all rights reserved

0,01 0,1 1 100 150 200 250 300 350 0,5 1,0 1,5 2,0 1 10 100 1000 10000 0,0 0,2 0,4 0,6 0,8 1,0 1,2 ITSM [A]IT [A] VT [V] t [ms] ZthJC [K/W] 2 3 4 5 6 7 8 9 0 11 100 1000 I2t [A 2s] t [ms] IT(AV)M [A] TC [°C] 0 25 50 75 100 125 150 Fig. 1 Forward characteristics Fig. 3 I 2t versus time (1-10 ms) t [s] Fig. 6 Max. forward current at case temperature Fig. 2 Surge overload current Fig. 8 Transient thermal impedance TVJ = 25°C TVJ = 125°C TVJ = 45°C

50 Hz, 80% VRRM

TVJ = 125°C TVJ = 45°C VR = 0 V 125°C 150°C 0 10 20 30 40 IT(AV) [A] P(AV) [W] Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature 0 50 100 150 Tamb [°C] dc = 0.5 0.4 0.33 0.17 0.08 10 100 1000 100 1000 1 10 100 1000 10000 0,1 IG [mA] VG [V] 4: PGAV = 0.5 W 5: PGM = 1 W 6: PGM = 10 W tgd [µs] IG [mA] typ. Limit TVJ = 125°C Fig. 4 Gate trigger characteristics Fig. 5 Gate controlled delay time 1: IGD, TVJ = 150°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C dc = 0.5 0.4 0.33 0.17 0.08 RthHA 0.6 0.8 1.0 2.0 4.0 8.0 Rthi [K/W] t i [s] 0.02 0.0004 0.10 0.0090 0.21 0.0140 0.41 0.0500 0.26 0.3600 2 3 Thyristor IXYS reserves the right to change limits, condition s and dimensions. 20150827b Data according to IEC 60747and per semiconductor un less otherwise specified © 2015 IXYS all rights reserved