CMA30E1600PB IXYS | Alldatasheet

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Technical content

Backside: anode TAV TVV 1.42 RRM 1600 V= V I= A Features / Advantages: Applications: Package:

  • Thyristor for line frequency
  • Planar passivated chip
  • Long-term stability
  • Line rectifying 50/60 Hz
  • Softstart AC motor control
  • DC Motor control
  • Power converter
  • AC power control
  • Lighting and temperature control TO-220
  • Industry standard outline
  • RoHS compliant
  • Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. 20130118aData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved

V = V A²s A²s A²s A²s Symbol Definition Ratings typ. max. I V I A VT 1.42 R 0.5 K/W min. V V 10T = 25°CVJ T = °CVJ mA2V = V T = 25°CVJI = AT V T = °CC 115 Ptot 250 WT = 25°CC 1600 forward voltage drop total power dissipation Conditions Unit 1.80 T = 25°CVJ 125 VT0 V0.90T = °CVJ 150 rT 17 mΩ V1.42T = °CVJI = AT V 1.92 I = A60 I = A60 threshold voltage slope resistance for power loss calculation only µA 125 V V1600T = 25°CVJ I A47 PGM Wt = 30 µs 10max. gate power dissipation P T = °CC 150 Wt = 5P PGAV W0.5average gate power dissipation CJ 13junction capacitance V = V400 T = 25°Cf = 1 MHzR VJ pF ITSM t = 10 ms; (50 Hz), sine T = 45°C VJmax. forward surge current T = °CVJ 150 I²t T = 45°Cvalue for fusing T = °C150 V = 0 VR V = 0 VR V = 0 V V = 0 V t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine VJ R VJ R thJC thermal resistance junction to case T = °CVJ 150 260 280 240 240 A A A A 220 240 340 325 1600 300 µs RMS forward currentT(RMS) TAV 180° sine average forward current (di/dt)cr A/µs150repetitive, I =TVJ = 125°C; f = 50 Hzcritical rate of rise of current VGT gate trigger voltage V= 6 V T = ° C 25 (dv/dt) T= 1 2 5 ° Ccritical rate of rise of voltage A/µs500 V/µs t = µs; IA ; V = ⅔ V R = ∞; method 1 (linear voltage rise) VJ D VJ 90 AT P G =0 . 2 di /dt A/µs;G =0 . 2 D DRM cr V = ⅔ VD DRM GK 500 1.3 V T= ° C-40VJ IGT gate trigger current V= 6 V T = ° C 25D VJ 28 mA T= ° C-40VJ 1.6 V 50 mA VGD gate non-trigger voltage T= ° CVJ 0.2 V IGD gate non-trigger current 1m A V = ⅔ VD DRM 150 latching current T= ° CVJ 90 mAIL 25tµ sp =1 0 IA ;G = 0.2 di /dt A/µsG =0 . 2 holding current T= ° CVJ 60 mAIH 25V= 6 VD R = ∞GK gate controlled delay time T= ° CVJ 2µ st gd 25 IA ;G = 0.5 di /dt A/µsG =0 . 5 V = ½ VD DRM turn-off time T= ° CVJ 150 µst q di/dt = A/µs;10 dv/dt = V/µs; 20 V =R 100 V; I A;T =3 0 V = ⅔ VD DRM t µsp = 200 non-repet., I = 30 AT 150 RthCH thermal resistance case to heatsink K/W Thyristor 1700 RRM/DRM RSM/DSM max. non-repetitive reverse/forward blocking voltage max. repetitive reverse/forward blocking voltage R/D reverse current, drain current T T R/D R/D 200 0.50 IXYS reserves the right to change limits, conditions and dimensions. 20130118aData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved

Lot # abcdef Product Marking Assembly Line C M A E 1600 PB Part number Thyristor (SCR) Thyristor (up to 1800V) Single Thyristor TO-220AB (3) CLA30E1200PB TO-220AB (3) 1200 Current Rating [A] Reverse Voltage [V] Package TVJ °C MD Nm0.6mounting torque 0.4 Tstg °C150storage temperature -55 Weight g2 Symbol Definition typ. max.min.Conditions virtual junction temperature Unit FC N60mounting force with clip 20 I RMS RMS current 35 Aper terminal 150-40 CS22-12io1M CLA30E1200PC TO-220ABFP (3) TO-263AB (D2Pak) (2) 1200 1200 CLA30E1200HB CS22-08io1M TO-247AD (3) TO-220ABFP (3) 1200 800 TO-220 Similar Part Package Voltage class CMA30E1600PN TO-220ABFP (3) 1600 Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering CMA30E1600PB 503348Tube 50CMA30E1600PBStandard threshold voltage V0.9 mΩ V0 max R0 max slope resistance * 14 Equivalent Circuits for Simulation T =VJ I V0 R0 Thyristor 150°C* on die level IXYS reserves the right to change limits, conditions and dimensions. 20130118aData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved

Dim. Millimeter Inches Min. Max. Min. Max. A 4.32 4.82 0.170 0.190 A1 1.14 1.39 0.045 0.055 A2 2.29 2.79 0.090 0.110 b 0.64 1.01 0.025 0.040 b2 1.15 1.65 0.045 0.065 C 0.35 0.56 0.014 0.022 D 14.73 16.00 0.580 0.630 E 9.91 10.66 0.390 0.420 e 2.54 BSC 0.100 BSC H1 5.85 6.85 0.230 0.270 L 12.70 13.97 0.500 0.550 L1 2.79 5.84 0.110 0.230 ØP 3.54 4.08 0.139 0.161 Q 2.54 3.18 0.100 0.125 3x b2 E ØP Q D L 3x b 2x e C A2 H1 A 123 2 1 Outlines TO-220 IXYS reserves the right to change limits, conditions and dimensions. 20130118aData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved

0.01 0.1 1 100 150 200 250 0 . 51 . 01 . 52 . 0 1 10 100 1000 10000 0.0 0.2 0.4 0.6 IT [A] t[ s ]VT [V] 23 4 5 6 7 8 9 0 11 100 1000 I2t [A2s] t[ m s ] ITSM [A] TVJ = 25°C TVJ =1 2 5 ° C TVJ =4 5 ° C

50 Hz, 80% VRRM

TVJ = 125°C TVJ = 45°C VR =0 V ITAVM [A] Tcase [°C] ZthJC [K/W] t[ m s ] Fig. 1 Forward characteristics Fig. 2 Surge overload current ITSM: crest value, t: duration Fig. 3 I 2t versus time (1-10 s) Fig. 4 Gate voltage & gate current Triggering: A = no; B = possible; C = safe Fig. 6 Max. forward current at case temperature Fig. 7 Transient thermal impedance junction to case Fig. 5 Gate controlled delay time t gd 0 1 02 03 04 0 IF(AV) [A] P(AV) [W] Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature 0 50 100 150 Tamb [°C] RthHA 0.6 0.8 1.0 2.0 4.0 8.0 dc = 0.5 0.4 0.33 0.17 0.08 dc = 0.5 0.4 0.33 0.17 0.08 TVJ = 125°C 150°C iR thi (K/W) ti (s) 10 . 0 8 0 . 0 1 2 0.06 0.0001 30 . 2 0 . 0 2 40 . 0 5 0 . 2 50 . 1 1 0 . 1 1 02 5 5 0 7 5 VG [V] IG [mA] IGD: TVJ =1 2 5 ° C IGD:T VJ =2 5 ° C IGD:T VJ =2 5 ° C IGD:T VJ =0 ° C IGD:T VJ =- 4 0 ° C -2 10-1 100 101 10-1 100 101 102 tgd [μs] IG [A] lim. typ. TVJ =1 2 5 ° C Thyristor IXYS reserves the right to change limits, conditions and dimensions. 20130118aData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved