CMA20E1600PB IXYS | Alldatasheet

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Backside: anode TAV TV V 1.48 RRM 1600 V = V I = A Features / Advantages: Applications: Package:

  • Thyristor for line frequency
  • Planar passivated chip
  • Long-term stability
  • Line rectifying 50/60 Hz
  • Softstart AC motor control
  • DC Motor control
  • Power converter
  • AC power control
  • Lighting and temperature control TO-220
  • Industry standard outline
  • RoHS compliant
  • Epoxy meets UL 94V-0 The data contained in this product data sheet is ex clusively intended for technically trained staff. T he user will have to evaluate the suitability of th e product for the intended application and the completeness of the product data with respect to his application. The specifications of our compon ents may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require produc t information in excess of the data given in this p roduct data sheet or which concerns the specific application of your product, please co ntact the sales office, which is responsible for yo u. Due to technical requirements our product may conta in dangerous substances. For information on the typ es in question please contact the sales office, whi ch is responsible for you. Should you intend to use the product in aviation, i n health or live endangering or life support applic ations, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. Terms Conditions of usage: IXYS reserves the right to change limits, condition s and dimensions. 20150827b Data according to IEC 60747and per semiconductor un less otherwise specified © 2015 IXYS all rights reserved

V = V A²s A²s A²s A²s Symbol Definition Ratings typ. max. I V I A VT 1.46 R 0.7 K/W min. V V

10 T = 25°C VJ

T = °C VJ mA 2V = V T = 25°C VJ I = A T V T = °C C 115 Ptot 170 WT = 25°C C 1600 forward voltage drop total power dissipation Conditions Unit 1.88 T = 25°C VJ 125 VT0 V0.92 T = °C VJ 150 rT 28 mΩ V1.48 T = °C VJ I = A T V 2.02 I = A 40 I = A 40 threshold voltage slope resistance for power loss calculation only µA 125 V V1600 T = 25°C VJ I A31 PGM Wt = 30 µs 10 max. gate power dissipation P T = °C C 150 Wt = 5P PGAV W0.5 average gate power dissipation CJ 9junction capacitance V = V 400 T = 25°C f = 1 MHz R VJ pF ITSM t = 10 ms; (50 Hz), sine T = 45°C VJ max. forward surge current T = °C VJ 150 I²t T = 45°C value for fusing T = °C 150 V = 0 V R V = 0 V R V = 0 V V = 0 V t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine VJ R VJ R thJC thermal resistance junction to case T = °C VJ 150 180 195 120 115 A A A A 155 165 160 160 1600 300 µs RMS forward current T(RMS) TAV 180° sine average forward current (di/dt) cr A/µs 150 repetitive, I = TVJ = 125°C; f = 50 Hz critical rate of rise of current VGT gate trigger voltage V = 6 V T = °C 25 (dv/dt) T = 125°C critical rate of rise of voltage A/µs 500 V/µs t = µs; I A; V = ⅔ V R = ∞; method 1 (linear voltage rise) VJ D VJ 60 AT P G = 0.2 di /dt A/µs; G = 0.2 DRM cr V = ⅔ V DRM GK 500 1.3 V T = °C -40 VJ IGT gate trigger current V = 6 V T = °C 25 D VJ 28 mA T = °C -40 VJ 1.6 V 50 mA VGD gate non-trigger voltage T = °C VJ 0.2 V IGD gate non-trigger current 1 mA V = ⅔ V D DRM 150 latching current T = °C VJ 90 mA IL 25 t µs p = 10 I A; G = 0.2 di /dt A/µs G = 0.2 holding current T = °C VJ 60 mA IH 25 V = 6 V D R = ∞GK gate controlled delay time T = °C VJ 2 µs tgd 25 I A; G = 0.5 di /dt A/µs G = 0.5 V = ½ V D DRM turn-off time T = °C VJ 150 µs tq di/dt = A/µs 10 dv/dt = V/µs 20 V = R 100 V; I A; T = 20 V = ⅔ V DRM t µs p = 200 non-repet., I = 20 AT 125 RthCH thermal resistance case to heatsink K/W Thyristor 1700 RRM/DRM RSM/DSM max. non-repetitive reverse/forward blocking voltage max. repetitive reverse/forward blocking voltage R/D reverse current, drain current T T R/D R/D 200 0.50 IXYS reserves the right to change limits, condition s and dimensions. 20150827b Data according to IEC 60747and per semiconductor un less otherwise specified © 2015 IXYS all rights reserved

Lot # abcdef Product Marking Assembly Line C M A E 1600 PB Part description Thyristor (SCR) Thyristor (up to 1800V) Single Thyristor TO-220AB (3) Current Rating [A] Reverse Voltage [V] Package Top °C MD Nm 0.6 mounting torque 0.4 TVJ °C 150 virtual junction temperature -40 Weight g2 Symbol Definition typ. max. min. Conditions operation temperature Unit FC N60 mounting force with clip 20 IRMS RMS current 35 Aper terminal 125 -40 TO-220 Similar Part Package Voltage class CMA20E1600PZ TO-263AB (D2Pak) (2HV) 1600 Delivery Mode Quantity Code No. Ordering Number Marking on Product Ordering CMA20E1600PB 515181 Tube 50 CMA20E1600PB Standard Tstg °C 150 storage temperature -40 threshold voltage V0.92 mΩ V0 max R0 max slope resistance * 25 Equivalent Circuits for Simulation T = VJ I V0 R0 Thyristor 150 °C * on die level IXYS reserves the right to change limits, condition s and dimensions. 20150827b Data according to IEC 60747and per semiconductor un less otherwise specified © 2015 IXYS all rights reserved

Dim. Millimeter Inches Min. Max. Min. Max. A 4.32 4.82 0.170 0.190 A1 1.14 1.39 0.045 0.055 A2 2.29 2.79 0.090 0.110 b 0.64 1.01 0.025 0.040 b2 1.15 1.65 0.045 0.065 C 0.35 0.56 0.014 0.022 D 14.73 16.00 0.580 0.630 E 9.91 10.66 0.390 0.420 e 2.54 BSC 0.100 BSC H1 5.85 6.85 0.230 0.270 L 12.70 13.97 0.500 0.550 L1 2.79 5.84 0.110 0.230 ØP 3.54 4.08 0.139 0.161 Q 2.54 3.18 0.100 0.125 3x b2 E ØP Q D L 3x b 2x e C A2 H1 A= supplier option 1 2 3 4/2 1 Outlines TO-220 IXYS reserves the right to change limits, condition s and dimensions. 20150827b Data according to IEC 60747and per semiconductor un less otherwise specified © 2015 IXYS all rights reserved

0,01 0,1 1 100 120 140 160 10 0 10 1 10 2 103 10 4 0,0 0,2 0,4 0,6 0,8 ITSM [A] IT [A] VT [V] t [ms] ZthJC [K/W] 2 3 4 5 6 7 8 9 0 11 100 1000 I2t [A 2s] t [ms] IT(AV)M [A] TC [°C] 0 25 50 75 100 125 150 175 Fig. 1 Forward characteristics Fig. 3 I 2t versus time (1-10 ms) t [s] Fig. 6 Max. forward current at case temperature Fig. 2 Surge overload current Fig. 8 Transient thermal impedance TVJ = 25°C TVJ = 125°C TVJ = 45°C

50 Hz, 80% VRRM

TVJ = 125°C TVJ = 45°C VR = 0 V 125°C 150°C 0 10 20 IT(AV) [A] P(AV) [W] Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature 0 50 100 150 Tamb [°C] dc = 0.5 0.4 0.33 0.17 0.08 10 100 1000 100 1000 IG [mA] VG [V] tgd [µs] IG [mA] typ. Limit TVJ = 125°C Fig. 4 Gate trigger characteristics Fig. 5 Gate controlled delay time dc = 0.5 0.4 0.33 0.17 0.08 RthHA 0.6 0.8 1.0 2.0 4.0 8.0 Rthi [K/W] t i [s] 0.1 0.01 0.08 0.0011 0.18 0.025 0.17 0.32 0.17 0.09 0 25 50 75 IGD: TVJ = 125°C IGD: TVJ = 25°C IGD: TVJ = 25°C IGD: TVJ = 0°C IGD: TVJ = -40°C A B B B C Thyristor IXYS reserves the right to change limits, condition s and dimensions. 20150827b Data according to IEC 60747and per semiconductor un less otherwise specified © 2015 IXYS all rights reserved