CLE90UH1200TLB IXYS | Alldatasheet

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5 NTC

3~ Rectifier Bridge, half-controlled (high-side) SemiFast High Efficiency Thyristor Part number CLE90UH1200TLB Backside: isolated Features / Advantages: Applications: Package:

  • Thyristor for line and moderate frequencies
  • Short turn-off time
  • Planar passivated chip
  • Long-term stability
  • Line rectifying 50/60 Hz
  • Drives
  • SMPS
  • UPS SMPD
  • Industry convenient outline
  • RoHS compliant
  • Epoxy meets UL 94V-0
  • Soldering pins for PCB mounting
  • Backside: DCB ceramic
  • Reduced weight
  • Advanced power cycling
  • Isolation Voltage: V~ 3000 The data contained in this product data sheet is ex clusively intended for technically trained staff. T he user will have to evaluate the suitability of th e product for the intended application and the completeness of the product data with respect to his application. The specifications of our compon ents may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require produc t information in excess of the data given in this p roduct data sheet or which concerns the specific application of your product, please co ntact your local sales office. Due to technical requirements our product may conta in dangerous substances. For information on the typ es in question please contact your local sales offi ce. Should you intend to use the product in aviation, i n health or life endangering or life support applic ations, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. Terms and Conditions of Usage RRM 1200 I 90 FSM 350 DAV V = V A A Rectifier IXYS reserves the right to change limits, condition s and dimensions. 20150325a Data according to IEC 60747and per semiconductor un less otherwise specified © 2015 IXYS all rights reserved

V = V A²s A²s A²s A²s Symbol Definition Ratings typ. max. I V I A VT 1.30 R 0.9 K/W min. V V

10 T = 25°C VJ

T = °C VJ mA 2V = V T = 25°C VJ I = A T V T = °C C 90 Ptot 140 WT = 25°C C 1200 forward voltage drop total power dissipation Conditions Unit 1.80 T = 25°C VJ 125 VT0 V0.92 T = °C VJ 150 rT 13 mΩ V1.28 T = °C VJ I = A T V 1.95 I = A 90 I = A 90 threshold voltage slope resistance for power loss calculation only µA 125 V V1200 T = 25°C VJ PGM Wt = 30 µs 10 max. gate power dissipation P T = °C C 150 Wt = 5P PGAV W0.5 average gate power dissipation CJ 13 junction capacitance V = V 400 T = 25°C f = 1 MHz R VJ pF ITSM t = 10 ms; (50 Hz), sine T = 45°C VJ max. forward surge current T = °C VJ 150 I²t T = 45°C value for fusing T = °C 150 V = 0 V R V = 0 V R V = 0 V V = 0 V t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine VJ R VJ R thJC thermal resistance junction to case T = °C VJ 150 350 380 450 425 A A A A 300 320 615 600 1200 300 µs DAV 120° sine bridge output current (di/dt) cr A/µs 150 repetitive, I = TVJ = 150°C; f = 50 Hz critical rate of rise of current VGT gate trigger voltage V = 6 V T = °C 25 (dv/dt) T = 150°C critical rate of rise of voltage A/µs 500 V/µs t = µs; I A; V = ⅔ V R = ∞; method 1 (linear voltage rise) VJ D VJ 90 AT P G = 0.3 di /dt A/µs; G = 0.3 DRM cr V = ⅔ V DRM GK 500 1.4 V T = °C -40 VJ IGT gate trigger current V = 6 V T = °C 25 D VJ 30 mA T = °C -40 VJ 1.7 V 50 mA VGD gate non-trigger voltage T = °C VJ 0.2 V IGD gate non-trigger current 1 mA V = ⅔ V D DRM 150 latching current T = °C VJ 90 mA IL 25 t µs p = 10 I A; G = 0.3 di /dt A/µs G = 0.3 holding current T = °C VJ 60 mA IH 25 V = 6 V D R = ∞GK gate controlled delay time T = °C VJ 2 µs tgd 25 I A; G = 0.3 di /dt A/µs G = 0.3 V = ½ V D DRM turn-off time T = °C VJ 50 µs tq di/dt = A/µs 10 dv/dt = V/µs 20 V = R 100 V; I A; T = 30 V = ⅔ V DRM t µs p = 200 non-repet., I = 30 AT 125 RthCH thermal resistance case to heatsink K/W Rectifier 1200 RRM/DRM RSM/DSM max. non-repetitive reverse/forward blocking voltage max. repetitive reverse/forward blocking voltage R/D reverse current, drain current T T R/D R/D 200 0.40 IXYS reserves the right to change limits, condition s and dimensions. 20150325a Data according to IEC 60747and per semiconductor un less otherwise specified © 2015 IXYS all rights reserved

1 to 19: Part # 20 to 23: Date Code 24 to 25: Assembly line 26 to 31: Lot # 32: Split Lot 33 to 36: Individual # ~ ~ ~ Assembly line C L E UH 1200 T LB Part description Thyristor (SCR) High Efficiency Thyristor Semifast (up to 1200V) 3~ Rectifier Bridge, half-controlled (high-side) Thermistor \\ Temperature sensor SMPD-B Current Rating [A] Reverse Voltage [V] Package Top °C TVJ °C 150 virtual junction temperature -55 Weight g8.5 Symbol Definition typ. max. min. Conditions operation temperature Unit FC N130 mounting force with clip 40 V Vt = 1 second Vt = 1 minute isolation voltage mm mm 1.6 4.0 dSpp/App creepage distance on surface | striking distance th rough air dSpb/Apb terminal to backside IRMS RMS current 100 Aper terminal 125 -55 terminal to terminal SMPD CLE90UH1200TLB-TRR Tape & Reel 200 517463 CLE90UH1200TLB Delivery Mode Quantity Code No. Ordering Number Marking on Product Alternative Ordering 0 25 50 75 100 125 150 102 103 104 105 R Typ. NTC resistance vs. temperature TC [°C] 50/60 Hz, RMS; I ≤ 1 mA ISOL CLE90UH1200TLB 517456 Tube 20 CLE90UH1200TLB Standard

3000 ISOL

Tstg °C 150 storage temperature -55 2500 threshold voltage V0.92 mΩ V0 max R0 max slope resistance * 10.5 Equivalent Circuits for Simulation T = VJ I V0 R0 Thyristor 150 °C * on die level T = 25° resistance kΩ5.25 K VJ 3375 R25 B25/50 54.75 temperature coefficient Symbol Definition typ. max. min. Conditions Unit Temperature Sensor NTC IXYS reserves the right to change limits, condition s and dimensions. 20150325a Data according to IEC 60747and per semiconductor un less otherwise specified © 2015 IXYS all rights reserved

32,7 0,5 2\0,05(3x) 18\0,1 2,75\0,1 5,5\0,1 13,5\0,1 16,25\0,1 19\0,1 25\0,2 0,5\0,1 9\0,1 0,2 1\0,05(6x) 5,5 0,12) A 0,55\0,1 4\`0,05 4,85 0,2 0,2 c 0,05 A ( 8 : 1 ) 0 0,15+ c 0,1 seating plane Pin number Notes: 1) potrusion may add 0.2 mm max. on each side 2) additional max. 0.05 mm per side by punching misalignement or overlap of dam bar or bending compression 3) DCB area 10 to 50 µm convex; position of DCB area in relation to plastic rim: ±25 µm (measured 2 mm from Cu rim) 4) terminal plating: 0.2 - 1 µm Ni + 10 - 25 µm Sn (gal v.) cutting edges may be partially free of plating IXYS reserves the right to change limits, condition s and dimensions. 20150325a Data according to IEC 60747and per semiconductor un less otherwise specified © 2015 IXYS all rights reserved