CLE40E1200HB IXYS | Alldatasheet

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Backside: anode TAV TV V 1.44 RRM 1200 V = V I = A Features / Advantages: Applications: Package:

  • Thyristor for line and moderate frequencies
  • Short turn-off time
  • Planar passivated chip
  • Long-term stability
  • Softstart AC motor control
  • Power converter
  • AC power control
  • Lighting and temperature control TO-247
  • Industry standard outline
  • RoHS compliant
  • Epoxy meets UL 94V-0 The data contained in this product data sheet is ex clusively intended for technically trained staff. T he user will have to evaluate the suitability of th e product for the intended application and the completeness of the product data with respect to his application. The specifications of our compon ents may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require produc t information in excess of the data given in this p roduct data sheet or which concerns the specific application of your product, please co ntact your local sales office. Due to technical requirements our product may conta in dangerous substances. For information on the typ es in question please contact your local sales offi ce. Should you intend to use the product in aviation, i n health or life endangering or life support applic ations, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. Terms and Conditions of Usage IXYS reserves the right to change limits, condition s and dimensions. 20171206b Data according to IEC 60747and per semiconductor un less otherwise specified © 2017 IXYS all rights reserved

V = V kA²s kA²s kA²s kA²s Symbol Definition Ratings typ. max. I V I A VT 1.47 R 0.25 K/W min. V V

50 T = 25°C VJ

T = °C VJ mA 4V = V T = 25°C VJ I = A T V T = °C C 130 Ptot 500 WT = 25°C C 1200 forward voltage drop total power dissipation Conditions Unit 1.76 T = 25°C VJ 125 VT0 V1.06 T = °C VJ 150 rT 9.1 mΩ V1.44 T = °C VJ I = A T V 1.80 I = A 80 I = A 80 threshold voltage slope resistance for power loss calculation only µA 125 V V1200 T = 25°C VJ I A63 PGM Wt = 30 µs 10 max. gate power dissipation P T = °C C 150 Wt = 5P PGAV W0.5 average gate power dissipation CJ 25 junction capacitance V = V 400 T = 25°C f = 1 MHz R VJ pF ITSM t = 10 ms; (50 Hz), sine T = 45°C VJ max. forward surge current T = °C VJ 150 I²t T = 45°C value for fusing T = °C 150 V = 0 V R V = 0 V R V = 0 V V = 0 V t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine VJ R VJ R thJC thermal resistance junction to case T = °C VJ 150 600 650 1.30 1.26 A A A A 510 550 1.80 1.76 1200 300 µs RMS forward current T(RMS) TAV 180° sine average forward current (di/dt) cr A/µs 150 repetitive, I = TVJ = 150°C; f = 50 Hz critical rate of rise of current VGT gate trigger voltage V = 6 V T = °C 25 (dv/dt) T = 150°C critical rate of rise of voltage A/µs 500 V/µs t = µs; I A; V = ⅔ V R = ∞; method 1 (linear voltage rise) VJ D VJ 120 AT P G = 0.3 di /dt A/µs; G = 0.3 DRM cr V = ⅔ V DRM GK 1000 1.5 V T = °C -40 VJ IGT gate trigger current V = 6 V T = °C 25 D VJ 50 mA T = °C -40 VJ 1.6 V 80 mA VGD gate non-trigger voltage T = °C VJ 0.2 V IGD gate non-trigger current 3 mA V = ⅔ V D DRM 150 latching current T = °C VJ 125 mA IL 25 t µs p = 10 I A; G = 0.3 di /dt A/µs G = 0.3 holding current T = °C VJ 120 mA IH 25 V = 6 V D R = ∞GK gate controlled delay time T = °C VJ 2 µs tgd 25 I A; G = 0.3 di /dt A/µs G = 0.3 V = ½ V D DRM turn-off time T = °C VJ 80 µs tq di/dt = A/µs 10 dv/dt = V/µs 20 V = R 100 V; I A; T = 40 V = ⅔ V DRM t µs p = 200 non-repet., I = 40 AT 125 RthCH thermal resistance case to heatsink K/W Thyristor 1300 RRM/DRM RSM/DSM max. non-repetitive reverse/forward blocking voltage max. repetitive reverse/forward blocking voltage R/D reverse current, drain current T T R/D R/D 200 0.25 IXYS reserves the right to change limits, condition s and dimensions. 20171206b Data according to IEC 60747and per semiconductor un less otherwise specified © 2017 IXYS all rights reserved

Part No. Logo IXYS abcd Assembly Code Zyyww Assembly Line XXXXXXXXX C L E E 1200 HB Part description Thyristor (SCR) High Efficiency Thyristor Semifast (up to 1200V) Single Thyristor TO-247AD (3) Current Rating [A] Reverse Voltage [V] Package Top °C MD Nm 1.2 mounting torque 0.8 TVJ °C 150 virtual junction temperature -55 Weight g6 Symbol Definition typ. max. min. Conditions operation temperature Unit FC N120 mounting force with clip 20 IRMS RMS current 70 Aper terminal 125 -55 TO-247 Delivery Mode Quantity Code No. Ordering Number Marking on Product Ordering CLE40E1200HB 517588 Tube 30 CLE40E1200HB Standard Tstg °C 150 storage temperature -55 threshold voltage V1.06 mΩ V0 max R0 max slope resistance * 5.8 Equivalent Circuits for Simulation T = VJ I V0 R0 Thyristor 150 °C * on die level IXYS reserves the right to change limits, condition s and dimensions. 20171206b Data according to IEC 60747and per semiconductor un less otherwise specified © 2017 IXYS all rights reserved

S Ø P Ø P1 D2 1 2 3 L 2x b2 3x b 2x e 2x E2 D E Q A A2 C Sym. Inches Millimeter min. max. min. max. A 0.185 0.209 4.70 5.30 A1 0.087 0.102 2.21 2.59 A2 0.059 0.098 1.50 2.49 D 0.819 0.845 20.79 21.45 E 0.610 0.640 15.48 16.24 E2 0.170 0.216 4.31 5.48 e 0.215 BSC 5.46 BSC L 0.780 0.800 19.80 20.30 L1 - 0.177 - 4.49 Ø P 0.140 0.144 3.55 3.65 Q 0.212 0.244 5.38 6.19 S 0.242 BSC 6.14 BSC b 0.039 0.055 0.99 1.40 b2 0.065 0.094 1.65 2.39 b4 0.102 0.135 2.59 3.43 c 0.015 0.035 0.38 0.89 D1 0.515 - 13.07 - D2 0.020 0.053 0.51 1.35 E1 0.530 - 13.45 - Ø P1 - 0.29 - 7.39 2 1 Outlines TO-247 IXYS reserves the right to change limits, condition s and dimensions. 20171206b Data according to IEC 60747and per semiconductor un less otherwise specified © 2017 IXYS all rights reserved

0.01 0.1 1 100 200 300 400 500 600 0.5 1.0 1.5 2.0 0.001 0.01 0.1 1 10 0.0 0.1 0.2 0.3 IT [A] t [s]VT [V] 2 3 4 5 6 7 8 9 0 11 500 1000 1500 2000 I2t [A 2s] t [ms] ITSM [A] TVJ = 125°C TVJ = 45°C

50 Hz, 80% VRRM

TVJ = 125°C TVJ = 45°C VR = 0 V VG [V] IG [mA] IT(AV)M [A] Tcase [°C] ZthJC [K/W] t [s] Fig. 1 Forward characteristics Fig. 2 Surge overload current ITSM: crest value, t: duration Fig. 3 I 2t versus time (1-10 s) Fig. 4 Gate voltage & gate current Fig. 6 Max. forward current at case temperature Fig. 7 Transient thermal impedance junction to case tgd [µs] IG [mA] lim. typ. Fig. 5 Gate controlled delay time t gd 0 10 20 30 40 50 IT(AV) [A] P(AV) [W] Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature 75 100 125 150 Tamb [°C] TVJ = 125°C dc = 0.5 0.4 0.33 0.17 0.08 dc = 0.5 0.4 0.33 0.17 0.08 1 10 100 1000 10000 0.1 4: PGAV= 0.5 W 5: PGM = 1 W 6: PGM = 10 W 1: IGD, TVJ = 150°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C i R thi (K/W) ti (s) 1 0.075 0.0011 2 0.17 0.0019 3 0.057 0.0115 4 0.158 0.12 5 0.0105 0.5 RthHA 0.4 0.6 0.8 1.0 2.0 4.0 2 3 4 5 TVJ = 25°C = 125°C = 150°C Thyristor IXYS reserves the right to change limits, condition s and dimensions. 20171206b Data according to IEC 60747and per semiconductor un less otherwise specified © 2017 IXYS all rights reserved