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Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
Features
z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF)
Applications
z Switched-mode and resonant-mode power supplies z DC choppers z AC motor control Advantages z Easy assembly z Space savings z High power density IXTC 26N50P
IXYS reserves the right to change limits, test conditions, and dimensions. Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = T , pulse test 20 28 S Ciss 3600 pF Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 380 pF Crss 48 pF td(on) 20 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = IT 25 ns td(off) RG = 4 Ω (External) 58 ns tf 20 ns Qg(on) 96 nC Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = IT 20 nC Qgd 45 nC RthJC 1.25 K/W RthCK 0.21 K/W Source-Drain Diode Characteristic Values (TJ = 25°C, unless otherwise specified) Symbol Test Conditions Min. typ. Max. IS VGS = 0 V 26 A ISM Repetitive 78 A VSD IF = IS, VGS = 0 V, 1.5 V Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % trr IF = 25 A 400 ns -di/dt = 100 A/µs QRM VR = 100 V 5.0 µC Note: Test Current IT = 13A IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 ISOPLUS220 Outline IXTC 26N50P
© 2004 IXYS All rights reserved IXTC 26N50P Fig. 2. Extended Output Characteristics @ 25ºC 0 3 6 9 12 15 18 21 24 27 30 VD S - Volts I D - Amperes VGS = 10V 5.5V Fig. 3. Output Characteristics @ 125ºC 02468 1 0 1 2 1 4 1 6 1 8 2 0 VD S - Volts I D - Amperes VGS = 10V 4.5V 5.5V Fig. 1. Output Characteristics @ 25ºC 01 2345678 VD S - Volts I D - Amperes VGS = 10V 4.5V 5.5V Fig. 4. RDS(on) Normalized to 0.5 I D25 Value vs. Junction Temperature 0.4 0.7 1.3 1.6 1.9 2.2 2.5 2.8 3.1 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade R D S ( o n ) - Normalized ID = 26A ID = 13A VGS = 10V Fig. 6. Drain Current vs. Case Temperature -50 -25 0 25 50 75 100 125 150 TC - Degrees Centigrade I D - Amperes Fig. 5. RDS(on) Normalized to 0.5 ID25 Value vs. I D 0.6 1.4 1.8 2.2 2.6 3.4 0 5 10 15 20 25 30 35 40 45 50 55 60 I D - Amperes R D S ( o n ) - Normalized TJ = 125ºC TJ = 25ºC VGS = 10V
IXYS reserves the right to change limits, test conditions, and dimensions. IXTC 26N50P Fig. 11. Capacitance 100 1000 10000 0 5 10 15 20 25 30 35 40 VD S - Volts Capacitance - picoFarads Ciss Coss Crssf = 1 M Hz Fig. 10. Gate Charge 0 1 02 03 04 05 06 07 08 09 0 1 0 0 Q G - nanoCoulombs VG S - Volts VDS = 250V ID = 13A IG = 10mA Fig. 7. Input Admittance 3.5 4 4.5 5 5.5 6 6.5 VG S - Volts I D - Amperes TJ = 125ºC 25ºC -40ºC Fig. 8. Transconductance 0 5 10 15 20 25 30 35 40 45 I D - Amperes g f s - Siemens TJ = -40ºC 25ºC 125ºC Fig. 9. Source Current vs. Source-To-Drain Voltage VS D - Volts I S - Amperes TJ = 125ºC TJ = 25ºC Fig. 12. Forw ard-Bias Safe Operating Area 0.1 100 10 100 1000 VD S - Volts I D - Amperes 100µs 1ms DC TJ = 150ºC TC = 25ºC R DS(on) Limit 10ms 25µs
© 2004 IXYS All rights reserved IXTC 26N50P F ig. 13. Maximum Transient Thermal R esistance 0.01 0.10 1.00 10.00 0.1 1 10 100 1000 Pulse Width - milliseconds R ( t h ) J C - ºC / W