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Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 6

Technical content

Features

z DCB Isolated mounting tab z Meets TO-247AD package Outline z High current handling capability z Latest generation HDMOSTM process z MOS Gate turn-on - drive simplicity

Applications

z Uninterruptible power supplies (UPS) z Switched-mode and resonant-mode power supplies z AC motor speed control z DC servo and robot drives z DC choppers Advantages z Easy assembly z High power density z Very fast switching speeds for high frequency applications E153432 C E

IXYS reserves the right to change limits, test conditions, and dimensions. IXGR 60N60B2 IXGR 60N60B2D1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs IC = 50 A; VCE = 10 V, 40 58 S Note 1 Cies 3900 pF Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 340 pF Cres 100 pF Qg 170 nC Qge IC = 50 A, VGE = 15 V, VCE = 0.5 VCES 25 nC Qgc 57 nC td(on) 28 ns tri 30 ns td(off) 160 270 ns tfi 100 170 ns Eoff 1.0 2.5 mJ td(on) 28 ns tri 36 ns Eon 1.5 mJ td(off) 310 ns tfi 240 ns Eoff 2.8 mJ RthJC 0.5 K/W RthCK 0.15 K/W Inductive load, TJ = 25° °° °°C IC = 50 A, VGE = 15 V VCE = 400 V, RG = Roff = 3.3 Ω Inductive load, TJ = 125° °° °°C I C = 50 A, VGE = 15 V VCE = 400 V, RG = Roff = 2.0 Ω Reverse Diode (FRED) Characteristic Values (TJ = 25°C, unless otherwise specified) Symbol Test Conditions min. typ. max. VF IF = 60 A, VGE = 0 V, 2.1 V Note 1 TJ = 150°C 1.4 V IRM IF = 60 A, VGE = 0 V, -diF/dt = 100 A/µ TJ = 100°C 8.3 A VR = 100 V trr IF = 1 A; -di/dt = 200 A/ms; VR = 30 V 35 ns RthJC 0.85 K/W Note 1: Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % ISOPLUS 247 Outline IXYS MOSFETs and IGBTs are covered by one or more4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505 of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344

© 2004 IXYS All rights reserved Fig. 2. E xtended Output Characteristics @ 25 deg. C 100 150 200 250 300 350 012345678 VC E - Volts I C - Amperes VGE = 15V 13V 11V Fig. 3. Output Characteristics @ 125 Deg. C 100 0 . 511 . 522 . 53 VCE - Volts I C - Amperes VGE = 15V 13V 11V Fig. 1. Output Characteristics @ 25 Deg. C 100 0 . 511 . 522 . 53 VC E - Volts I C - Amperes VGE = 15V 13V 11V Fig. 4. Dependence of V CE(sat) on Temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade V C E (sat)- Normalized IC = 50A IC = 25A VGE = 15V IC = 100A Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter voltage 1.3 1.6 1.9 2.2 2.5 2.8 3.1 3.4 3.7 5 6 7 8 9 10 11 12 13 14 15 16 17 VG E - Volts VC E - Volts TJ = 25ºC IC = 100A 50A 25A Fig. 6. Input Admittance 100 150 200 250 300 456789 1 0 VG E - Volts I C - Amperes TJ = 125ºC -40ºC TJ = 25ºC IXGR 60N60B2 IXGR 60N60B2D1

IXYS reserves the right to change limits, test conditions, and dimensions. IXGR 60N60B2 IXGR 60N60B2D1 Fig. 7. Transconductance 100 0 50 100 150 200 250 300 I C - Am peres g f s - Siemens TJ = -40ºC 25ºC 125ºC Fig. 8. Dependence of Turn-Off E nergy on RG 0 5 10 15 20 25 30 35 40 45 50 R G - Ohms E off - milliJoules IC = 25A TJ = 125ºC VGE = 15V VCE = 400V IC = 50A IC = 100A Fig. 9. Dependence of Turn-Off En e r g y on Ic 20 30 40 50 60 70 80 90 100 I C - Am peres E off - MilliJoules RG = 3.3 Ω VGE = 15V VCE = 400V TJ = 125ºC TJ = 25ºC Fig. 10. Dependence of Turn-Off E nergy on Temperature 25 35 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade E off - milliJoules IC = 100A RG = 3.3 Ω VGE = 15V VCE = 400V IC = 50A IC = 25A Fig. 11. Dependence of Turn-Off Switching Time on R G 200 300 400 500 600 700 800 900 1000 1100 1200 0 5 10 15 20 25 30 35 40 45 50 R G - Ohm s Switching Time - nanosecond IC = 50A td(off) tfi - - - - - - TJ = 125ºC VGE = 15V VCE = 400V IC = 25A IC = 100A Fig. 12. Dependence of Turn-Off Switching Time on Ic 100 150 200 250 300 350 400 20 30 40 50 60 70 80 90 100 I C - Am peres Switching Time - nanosecond td(off) tfi - - - - - - RG = 3.3Ω VGE = 15V VCE = 400V TJ = 125ºC TJ = 25ºC

© 2004 IXYS All rights reserved IXGR 60N60B2 IXGR 60N60B2D1 Fig. 14. Gate Charge 0 20 40 60 80 100 120 140 160 180 QG - nanoCoulombs VGE - Volts VCE = 300V IC = 50A IG = 10mA Fig. 15. Capacitance 100 1000 10000 0 5 10 15 20 25 30 35 40 VCE - Volts Capacitance - pF Cies Coes Cres f = 1 M Hz Fig. 13. Dependence of Turn-Off Switching Time on Temperature 100 150 200 250 300 350 25 35 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade Switching Time - nanosecond IC = 25A 50A 100A td(off) tfi - - - - - - RG = 3.3Ω VGE = 15V VCE = 400V IC = 100A 50A 25A F i g. 13. Maxi mum Transi ent Thermal R esi stance 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 1 10 100 1000 Pulse Width - milliseconds R( t h ) J C - ºC / W

IXYS reserves the right to change limits, test conditions, and dimensions. IXGR 60N60B2 IXGR 60N60B2D1 200 600 10000 400 800 100 110 120 130 140 0.0001 0.001 0.01 0.1 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 Kf TVJ -diF/dt t s K/W 0 200 400 600 800 1000 0.0 0.4 0.8 1.2 1.6 VFR diF/dt V 200 600 10000 400 800 100 1000 1000 2000 3000 4000 012 100 120 140 160 IRMQr IF A VF -diF/dt -diF/dt A/µs A V nC A/µs A/µs trr ns tfr A/µs µs DSEP 2x61-06A ZthJC IF=120A IF= 60A IF= 30A TVJ= 100°C VR = 300V TVJ= 100°C IF = 60A Fig. 19. Peak reverse current I RM versus -diF/dt Fig. 18. Reverse recovery charge Q r versus -diF/dt Fig. 17. Forward current I F versus VF TVJ= 100°C VR = 300V TVJ= 100°C VR = 300V IF=120A IF= 60A IF= 30A Qr IRM Fig. 20. Dynamic parameters Q r, IRM versus TVJ Fig. 21. Recovery time t rr versus -diF/dt Fig. 22. Peak forward voltage V FR and tfr versus diF/dt IF=120A IF= 60A IF= 30A tfr VFR Fig. 23. Transient thermal resistance junction to case Constants for ZthJC calculation: iR thi (K/W) t i (s) 1 0.3073 0.0055 2 0.3533 0.0092 3 0.0887 0.0007 4 0.1008 0.0399 TVJ= 25°C TVJ=150°C TVJ=100°C