IXFN106N20 IXYS | Alldatasheet
Document overview
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Technical content
Features
l International standard packages G JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification G miniBLOC with Aluminium nitride isolation G Low RDS (on) HDMOS TM process G Rugged polysilicon gate cell structure G Unclamped Inductive Switching (UIS) rated G Low package inductance G Fast intrinsic Rectifier
Applications
G Synchronous rectification G Battery chargers G Switched-mode and resonant-mode power supplies G DC choppers G Temperature and lighting controls G Low voltage relays Advantages G Easy to mount G Space savings G High power density Symbol Test Conditions Characteristic Values (TJ = 25/G176C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 1 mA 200 V VGH(th) VDS = VGS , ID = 8 mA 2 4 V IGSS VGS = /G17720 VDC , VDS = 0 /G177200 nA IDSS VDS = 0.8 • VDSS TJ = 25/G176C 400 /G109A VGS = 0 V T J = 125/G176C2 m A R DS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t /G163 300 /G109s, IXFK90N20 0.023 /G87 duty cycle d/G32/G163 2 % IXFN100N20 0.023 /G87 IXFN106N20 0.020 /G87 TO-264 AA (IXFK) S G D D S G S G = Gate D = Drain S = Source TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source S G S D 92804H (7/97) miniBLOC, SOT-227 B (IXFN) E153432 (TAB) VDSS ID25 R DS(on) IXFK 90 N 20200 V 90 A 23 m /G87 IXFN 100 N 20 200 V 100 A 23 m /G87 IXFN 106 N 20 200 V 106 A 20 m /G87 /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32trr /G163/G32200 ns TO-264 AA IXYS reserves the right to change limits, test conditions, and dimensions.
2 - 4© 2000 IXYS All rights reserved Symbol Test Conditions Characteristic Values (TJ = 25/G176C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 ID25 , pulse test 60 S C iss 9000 pF C oss VGS = 0 V, VDS = 25 V, f = 1 MHz 1600 pF C rss 590 pF td(on) 30 ns tr VGS = 10 V, VDS = 0.5 VDSS , ID = 0.5 ID25 80 ns td(off) R G = 1/G32/G87 (External), 75 ns tf 30 ns Q g(on) 380 nC Q gs VGS = 10 V, VDS = 0.5 VDSS , ID = 0.5 ID25 70 nC Q gd 190 nC R thJC TO-264 AA 0.25 K/W R thCK TO-264 AA 0.15 K/W R thJC miniBLOC, SOT-227 B 0.24 K/W R thCK miniBLOC, SOT-227 B 0.05 K/W Source-Drain Diode Characteristic Values (TJ = 25/G176C, unless otherwise specified) Symbol Test Conditions min. typ. max. IS VGS = 0 V IXFK90N20 90 A IXFN100N20 100 A IXFN106N20 106 A IXFK90N20 I SM Repetitive; IXFN100N20 360 A pulse width limited by T JM IXFN106N20 424 A VSD IF = 100 A, VGS = 0 V, 1.5 V Pulse test, t /G163/G32300 /G109s, duty cycle d/G32/G163 2 % trr 200 ns Q RM IF = 50 A, -di/dt = 100 A//G109s, VR = 100 V 3 /G109C IRM 38 A Millimeter Inches Min. Max. Min. Max. A 4.82 5.13 .190 .202 A1 2.54 2.89 .100 .114 A2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 D 25.91 26.16 1.020 1.030 E 19.81 19.96 .780 .786 e 5.46 BSC .215 BSC J 0.00 0.25 .000 .010 K 0.00 0.25 .000 .010 L 20.32 20.83 .800 .820 L1 2.29 2.59 .090 .102 P 3.17 3.66 .125 .144 Q 6.07 6.27 .239 .247 Q1 8.38 8.69 .330 .342 R 3.81 4.32 .150 .170 R1 1.78 2.29 .070 .090 S 6.04 6.30 .238 .248 T 1.57 1.83 .062 .072 Dim. TO-264 AA Outline M4 screws (4x) supplied Dim. Millimeter Inches Min. Max. Min. Max. A 31.50 31.88 1.240 1.255 B 7.80 8.20 0.307 0.323 C 4.09 4.29 0.161 0.169 D 4.09 4.29 0.161 0.169 E 4.09 4.29 0.161 0.169 F 14.91 15.11 0.587 0.595 G 30.12 30.30 1.186 1.193 H 38.00 38.23 1.496 1.505 J 11.68 12.22 0.460 0.481 K 8.92 9.60 0.351 0.378 L 0.76 0.84 0.030 0.033 M 12.60 12.85 0.496 0.506 N 25.15 25.42 0.990 1.001 O 1.98 2.13 0.078 0.084 P 4.95 5.97 0.195 0.235 Q 26.54 26.90 1.045 1.059 R 3.94 4.42 0.155 0.174 S 4.72 4.85 0.186 0.191 T 24.59 25.07 0.968 0.987 U -0.05 0.1 -0.002 0.004 miniBLOC, SOT-227 B IXFK100N20 IXFN90N20 IXFN106N20 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
3 - 4© 2000 IXYS All rights reserved IXFK100N20 IXFN90N20 IXFN106N20 Fig. 1 Output Characteristics Fig. 2 Input Admittance Fig. 5 Drain Current vs. Fig. 6 Temperature Dependence of Case Temperature Breakdown and Threshold Voltage Fig. 3 RDS(on) vs. Drain Current Fig. 4 Temperature Dependence of Drain to Source Resistance TJ - Degrees C -50 -25 0 25 50 75 100 125 150 BV/VG(th) - Normalized 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 TC - Degrees C -50 -25 0 25 50 75 100 125 150 ID - Amperes 100 120 TJ - Degrees C -50 -25 0 25 50 75 100 125 150 R DS(on) - Normalized 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 ID = 53A ID - Amperes 0 50 100 150 200 250 300 350 R DS(on) - Normalized 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 VGS - Volts 0123456789 1 0 ID - Amperes 100 120 140 160 180 200 VDS - Volts 0123456789 1 0 ID - Amperes 100 120 140 160 180 200 VGS = 15V VGS = 10V VGS = 10V BV DSS VGS(th) 7VTJ = 25°C TJ = 25°C TJ = 25°C 106N20 90N20
4 - 4© 2000 IXYS All rights reserved Fig.10 Transient Thermal Impedance TJ = 25°C VSD - Volts ID - Amperes 100 Pulse Width - Seconds 0.001 0.01 0.1 1 Thermal Response - K/W 0.01 0.1 VDS - Volts 0 5 10 15 20 25 Capacitance - pF 1000 2000 3000 4000 5000 6000 7000 8000 9000 C rss C oss C iss Gate Charge - nCoulombs 0 50 100 150 200 250 300 350 400 VGE - Volts VDS = 100V ID = 50A IG = 10mA f = 1MHz VDS = 25V TJ = 125°C 0.5 Fig.7 Gate Charge Characteristic Curve Fig.8 Capacitance Curves Fig.9 Source Current vs. Source to Drain Voltage IXFK100N20 IXFN90N20 IXFN106N20