89358 IXYS | Alldatasheet

Document overview

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Technical content

Features

z Electrically Isolated tab z High current handling capability z MOS Gate turn-on - drive simplicity z Rugged NPT structure z Molding epoxies meet UL 94 V-0 flammability classification

Applications

z Capacitor discharge & pulser circuits z AC motor speed control z DC servo and robot drives z DC choppers z Uninterruptible power supplies (UPS) z Switched-mode and resonant-mode power supplies DS99233(11/04) Symbol Test Conditions Characteristic Values (TJ = 25 °C unless otherwise specified) min. typ. max. BVCES IC = 1mA, VGE = 0 V 1700 V VGE(th) IC = 250 µA, VCE = VGE 3.0 5.0 V ICES VCE = 0.8 • VCES 500 µA VGE = 0 V Note 1 T J = 125°C8 m A IGES VCE = 0 V, VGE = ±20 V ±100 nA VCE(sat) IC = IC90, VGE = 15 V 4.2 5.2 V TJ = 125°C 4.8 V Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C2 6 A IC90 TC = 90°C1 7 A IF90 14 A ICM TC = 25°C, 1 ms 200 A SSOA VGE = 15 V, TVJ = 125°C, RG = 5Ω ICM = 70 A (RBSOA) Clamped inductive load @ 0.8 V CES tSC TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 10Ω 10 µs PC TC = 25°C 200 W TJ -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C VISOL 50/60 Hz, 1 minute 2500 ~V Maximum lead temperature for soldering 300 °C 1.6 mm (0.062 in.) from case for 10 s Weight 5g High Voltage IGBT with Diode Advance Technical Information Electrically Isolated Tab ISOLATED TAB E G C ISOPLUS247 (IXGR) E153432

IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 Symbol Test Conditions Characteristic Values (TJ = 25 °C unless otherwise specified) min. typ. max. gfs IC = IC25; VCE = 10 V 25 33 S Note 2 Cies 3700 pF Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 180 pF Cres 44 pF Qg 155 nC Qge IC = IC90, VGE = 15 V, VCE = 0.5 VCES 30 nC Qgc 51 nC td(on) 46 ns tri 57 ns td(off) 270 500 ns tfi 50 100 ns Eoff 1.5 3.0 mJ td(on) 48 ns tri 42 ns Eon 2.5 mJ td(off) 300 ns tfi 70 ns Eoff 2.4 mJ RthJC 0.65 K/W RthCK 0.15 K/W Inductive load, TJ = 125°°°°°C IC = IC90, VGE = 15 V RG = 2.7 Ω, VCE = 0.8 VCES Note 3 Inductive load, TJ = 25°°°°°C IC = IC90, VGE = 15 V RG = 2.7 Ω, VCE = 0.8 VCES Note 3 IXGR 32N170AH1 Notes:1. Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. 2. Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 3. Switching times may increase for V CE (Clamp) > 0.8 • VCES, higher TJ or increased RG. 4. See DH60-18A and IXGH32N170A datasheets for additional characteristics ISOPLUS247 Outline Reverse Diode (FRED) Characteristic Values (TJ = 25 °C, unless otherwise specified) Symbol Test Conditions min. typ. max. VF IF = 20A, VGE = 0 V, Note 2 2.7 V IRM IF = 50A, VGE = 0 V, -diF/dt = 800 A/µs5 0 A trr VR = 600 V 150 ns RthJC 1.5 K/W See IXGX32N170AH1 for charcteristic curves