IXFH70N15 IXYS | Alldatasheet
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Technical content
Features
- International standard packages Low RDS (on) HDMOS TM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier Advantages Easy to mount Space savings High power density IXFH 70N15 V DSS = 150 V IXFT 70N15 I D25 = 70 A RDS(on) = 28 m/G87 trr /G163 250ns IXYS reserves the right to change limits, test conditions, and dimensions.
2 - 2© 2000 IXYS All rights reserved IXFH 70N15 IXFT 70N15 Symbol Test Conditions Characteristic Values (TJ = 25/G176C, unless otherwise specified) Min. Typ. Max. gfs VDS = 10 V; ID = 0.5 ID25 , pulse test 30 45 S C iss 3600 pF C oss VGS = 0 V, VDS = 25 V, f = 1 MHz 1080 pF C rss 360 pF td(on) 35 ns tr VGS = 10 V, VDS = 0.5 VDSS , ID = 0.5 ID25 52 ns td(off) R G = 2/G32/G87 (External) 70 ns tf 23 ns Q g(on) 180 nC Q gs VGS = 10 V, VDS = 0.5 VDSS , ID = 0.5 ID25 28 nC Q gd 92 nC R thJC 0.42 K/W R thCK (TO-247) 0.25 K/W Source-Drain Diode Characteristic Values (TJ = 25/G176C, unless otherwise specified) Symbol Test Conditions min. typ. max. IS VGS = 0 V 70 A ISM Repetitive; 280 A VSD IF = IS, VGS = 0 V, 1.5 V Pulse test, t /G163/G32300 /G109s, duty cycle d/G32/G163 2 % trr 250 ns Q RM IF = 25A,-di/dt = 100 A//G109s, VR = 25 V 0.85 /G109C IRM 8A TO-247 AD (IXFH) Outline Dim. Millimeter Inches Min. Max. Min. Max. A 19.81 20.32 0.780 0.800 B 20.80 21.46 0.819 0.845 C 15.75 16.26 0.610 0.640 D 3.55 3.65 0.140 0.144 E 4.32 5.49 0.170 0.216 F 5.4 6.2 0.212 0.244 G 1.65 2.13 0.065 0.084 H - 4.5 - 0.177 J 1.0 1.4 0.040 0.055 K 10.8 11.0 0.426 0.433 L 4.7 5.3 0.185 0.209 M 0.4 0.8 0.016 0.031 N 1.5 2.49 0.087 0.102 Dim. Millimeter Inches Min. Max. Min. Max. A 4.9 5.1 .193 .201 A 1 2.7 2.9 .106 .114 A 2 .02 .25 .001 .010 b 1.15 1.45 .045 .057 b2 1.9 2.1 .75 .83 C .4 .65 .016 .026 D 13.80 14.00 .543 .551 E 15.85 16.05 .624 .632 E 1 13.3 13.6 .524 .535 e 5.45 BSC .215 BSC H 18.70 19.10 .736 .752 L 2.40 2.70 .094 .106 L1 1.20 1.40 .047 .055 L2 1.00 1.15 .039 .045 L3 0.25 BSC .010 BSC L4 3.80 4.10 .150 .161 TO-268AA (D3 PAK) Min. Recommended Footprint IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025