IXTK62N25 IXYS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Features
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- International standard package
- Fast switching times
Applications
- Motor controls
- DC choppers
- Switched-mode power supplies Advantages
- Easy to mount with one screw (isolated mounting screw hole)
- Space savings
- High power density 98877A (02/02) High Current MegaMOSTMFET N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; R GS = 1.0 M Ω 250 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25 °C6 2 A IDM TC = 25°C, pulse width limited by TJM 248 A IAR TC = 25 °C6 2 A EAR TC = 25 °C4 5 m J EAS TC = 25 °C1 .5 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS 5 V/ns TJ ≤ 150°C, RG = 2 Ω PD TC = 25 °C 390 W TJ -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TL 1.6 mm (0.063 in.) from case for 10 s 300 °C Md Mounting torque 0.7/6 Nm/lb.in. Weight TO-264 10 g TO-264 AA (IXTK) S G D D (TAB) G = Gate D = Drain S = Source Tab = Drain IXTK 62N25 V DSS = 250 V ID25 = 6 2 A RDS(on) = 3 5 m ΩΩΩΩΩ
IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 Symbol Test Conditions Characteristic values (TJ = 25°C unless otherwise specified) Min. Typ. Max. gfs VDS = 10 V; ID = 0.5 ID25, pulse test 35 50 S Ciss 6600 pF Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1125 pF Crss 270 pF td(on) 30 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 25 ns td(off) RG = 1.5 Ω (External) 115 ns tf 15 ns Qg(on) 240 nC Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 55 nC Qgd 85 nC RthJC 0.30 K/W RthCK 0.15 K/W Source-Drain Diode Ratings and Characteristics (TJ = 25°C unless otherwise specified) Symbol Test Conditions Min. Typ. Max. IS VGS = 0V 62 A ISM Repetitive; pulse width limited by TJM 248 A VSD IF = IS, VGS = 0 V, 1.5 V Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % trr IF = 30A, -di/dt = 100 A/µs, V R = 100V 360 ns Qrr 6 µ C IXTK 62N25 TO-264 AA Outline Millimeter Inches Min. Max. Min. Max. A 4.82 5.13 .190 .202 A1 2.54 2.89 .100 .114 A2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 D 25.91 26.16 1.020 1.030 E 19.81 19.96 .780 .786 e 5.46 BSC .215 BSC J 0.00 0.25 .000 .010 K 0.00 0.25 .000 .010 L 20.32 20.83 .800 .820 L1 2.29 2.59 .090 .102 P 3.17 3.66 .125 .144 Q 6.07 6.27 .239 .247 Q1 8.38 8.69 .330 .342 R 3.81 4.32 .150 .170 R1 1.78 2.29 .070 .090 S 6.04 6.30 .238 .248 T 1.57 1.83 .062 .072 Dim.