IXGN60N60 IXYS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Features
G International standard package SOT-227B G Aluminium nitride isolation - high power dissipation G Isolation voltage 3000 V~ G Very high current, fast switching IGBT G Low VCE(sat) for minimum on-state conduction losses G MOS Gate turn-on drive simplicity G Low collector-to-case capacitance (< 50 pF) G Low package inductance (< 5 nH) - easy to drive and to protect
Applications
G DC servo and robot drives G DC choppers G Uninterruptible power supplies (UPS) G Switch-mode and resonant-mode power supplies Advantages G Easy to mount with 2 screws G Space savings G High power density 97521E (7/00) E G E x E x C G = Gate, C = Collector, E = Emitter x Either emitter terminal can be used as Main or Kelvin Emitter SOT-227B miniBLOC Preliminary data sheet IXYS reserves the right to change limits, test conditions, and dimensions.
2 - 2© 2000 IXYS All rights reserved Symbol Test Conditions Characteristic Values (TJ = 25/G176C, unless otherwise specified) min. typ. max. gfs IC = IC90 ; VCE = 10 V, 30 55 S Pulse test, t /G163 300 /G109s, duty cycle /G163 2 % C ies 4000 pF C oes VCE = 25 V, VGE = 0 V, f = 1 MHz 290 pF C res 100 pF Q g 200 nC Q ge IC = IC90 , VGE = 15 V, VCE = 0.5 VCES 35 nC Q gc 80 nC td(on) 50 ns tri 30 ns td(off) 300 600 ns tfi 360 570 ns Eoff 81 5 m J td(on) 50 ns tri 30 ns Eon 3m J td(off) 650 ns tfi 550 ns Eoff 17 mJ R thJC 0.50 K/W R thCK 0.05 K/W Inductive load, TJ = 25/G176C IC = IC90 , VGE = 15 V, L = 100 /G109H, VCE = 0.8 VCES , RG = Roff = 2.7 /G87 Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES , higher TJ or increased RG Inductive load, TJ = 125/G176C IC = IC90 , VGE = 15 V, L = 100 /G109H VCE = 0.8 VCES , RG = Roff = 2.7 /G87 Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES , higher TJ or increased RG IXGN 60N60 M4 screws (4x) supplied Dim. Millimeter Inches Min. Max. Min. Max. A 31.50 31.88 1.240 1.255 B 7.80 8.20 0.307 0.323 C 4.09 4.29 0.161 0.169 D 4.09 4.29 0.161 0.169 E 4.09 4.29 0.161 0.169 F 14.91 15.11 0.587 0.595 G 30.12 30.30 1.186 1.193 H 38.00 38.23 1.496 1.505 J 11.68 12.22 0.460 0.481 K 8.92 9.60 0.351 0.378 L 0.76 0.84 0.030 0.033 M 12.60 12.85 0.496 0.506 N 25.15 25.42 0.990 1.001 O 1.98 2.13 0.078 0.084 P 4.95 5.97 0.195 0.235 Q 26.54 26.90 1.045 1.059 R 3.94 4.42 0.155 0.174 S 4.72 4.85 0.186 0.191 T 24.59 25.07 0.968 0.987 U -0.05 0.1 -0.002 0.004 miniBLOC, SOT-227 B IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025