50N60

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Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 6

Technical content

Features

 Fast Intrinsic Rectifier  Avalanche Rated  Low RDS(ON) and QG  Low Package Inductance Advantages  High Power Density  Easy to Mount  Space Savings

Applications

 Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converters  Laser Drivers  AC and DC Motor Drives  Robotics and Servo Controls Symbol Test Conditions Characteristic Values (TJ = 25C Unless Otherwise Specified) Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 600 V VGS(th) VDS = VGS, ID = 4mA 3.0 5.0 V IDSS VDS = VDSS, VGS = 0V 25 A TJ = 125C 2 mA RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 160 m  G = Gate D = Drain S = Source Tab = Drain TO-247 (IXFH) G S D (Tab)D TO-268 (IXFT) S G D (Tab) TO-3P (IXFQ) D G S D (Tab)

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 Note 1. Pulse test, t  300s, duty cycle, d  2%. Symbol Test Conditions Characteristic Values (TJ = 25C Unless Otherwise Specified) Min. Typ. Max. gfs VDS = 20V, ID = 0.5 • ID25, Note 1 32 55 S Ciss 6300 pF Coss VGS = 0V, VDS = 25V, f = 1MHz 630 pF Crss 2.5 pF RGi Gate Input Resistance 1.0  td(on) 31 ns tr 20 ns td(off) 62 ns tf 17 ns Qg(on) 94 nC Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 27 nC Qgd 23 nC RthJC 0.12 C/W RthCS (TO-247 & TO-3P) 0.25 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (TJ = 25C Unless Otherwise Specified) Min. Typ. Max. IS VGS = 0V 50 A ISM Repetitive, Pulse Width Limited by T JM 200 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr 250 ns IRM 11 A QRM 1.1 μC IF = 25A, -di/dt = 100A/ s VR = 100V, VGS = 0V Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1 (External) e P TO-247 Outline 1 2 3 Terminals: 1 - Gate 2 - Drain 3 - Source Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A1 2.2 2.54 .087 .102 A2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b1 1.65 2.13 .065 .084 b2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC TO-268 Outline Terminals: 1 - Gate 2,4 - Drain 3 - Source TO-3P Outline

© 2014 IXYS CORPORATION, All Rights Reserved IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 Fig. 1. Output Characteristics @ TJ = 25ºC 01234567 VDS - Volts ID - Amperes VGS = 10V Fig. 2. Extended Output Characteristics @ T J = 25ºC 100 0 5 10 15 20 25 30 VDS - Volts ID - Amperes VGS = 10V Fig. 3. Output Characteristics @ TJ = 125ºC 0 2 4 6 8 1 01 21 41 61 8 VDS - Volts ID - Amperes VGS = 10V Fig. 4. RDS(on) Normalized to ID = 25A Value vs. Junction Temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade RDS(on) - Normalized VGS = 10V I D = 50A I D = 25A Fig. 5. RDS(on) Normalized to ID = 25A Value vs. Drain Current 0.6 1.0 1.4 1.8 2.2 2.6 3.0 0 1 02 03 04 05 06 07 08 09 0 1 0 0 ID - Amperes RDS(on) - Normalized VGS = 10V TJ = 125ºC TJ = 25ºC Fig. 6. Maximum Drain Current vs. Case Temperature -50 -25 0 25 50 75 100 125 150 TC - Degrees Centigrade ID - Amperes

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 Fig. 7. Input Admittance VGS - Volts ID - Amperes TJ = 125ºC 25ºC - 40ºC Fig. 8. Transconductance 100 120 0 1 02 03 04 05 06 07 08 0 ID - Amperes g f s - Siemens TJ = - 40ºC 125ºC 25ºC Fig. 9. Forward Voltage Drop of Intrinsic Diode 100 120 140 VSD - Volts IS - Amperes TJ = 125ºC TJ = 25ºC Fig. 10. Gate Charge 0 1 02 03 04 05 06 07 08 09 0 1 0 0 QG - NanoCoulombs VGS - Volts VDS = 300V I D = 25A I G = 10mA Fig. 11. Capacitance 100 1,000 10,000 0 5 10 15 20 25 30 35 40 VDS - Volts Capacitance - PicoFarads f = 1 MHz Ciss Crss Coss Fig. 12. Forward-Bias Safe Operating Area 100 1000 10 100 1,000 VDS - Volts ID - Amperes TJ = 150ºC TC = 25ºC Single Pulse 100µs 1ms RDS(on) Limit

© 2014 IXYS CORPORATION, All Rights Reserved IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 IXYS REF: F_50N60P3(W8)03-10-11 Fig. 13. Maximum Transient Thermal Impedance 0.001 0.01 0.1 Pulse Width - Seconds Z(th)JC - ºC / W Fig. 13. Maximum Transient Thermal Impedance AAAAA0.2

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