IXGH41N60 IXYS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

Features

 International standard package JEDEC TO-247 AD  Newest generation HDMOSTM process  Low VCE(sat) - for minimum on-state conduction losses  High current handling capability  MOS Gate turn-on - drive simplicity

Applications

 AC motor speed control  DC servo and robot drives  DC choppers  Solid state relays  Lighting controls  Temperature regulators Advantages  Easy to mount with 1 screw (isolated mounting screw hole)  Low losses, high efficiency  High power density 97546(1/98) TO-247 AD G C E G = Gate, C = Collector, E = Emitter, TAB = Collector IXYS reserves the right to change limits, test conditions, and dimensions.

2 - 2© 2000 IXYS All rights reserved Symbol Test Conditions Characteristic Values (TJ = 25/G176C, unless otherwise specified) min. typ. max. gfs IC = IC90 ; VCE = 10 V, 19 28 S Pulse test, t /G163 300 /G109s, duty cycle /G163 2 % C ies 2750 pF C oes VCE = 25 V, VGE = 0 V, f = 1 MHz 206 pF C res 55 pF Q g 120 nC Q ge IC = IC90 , VGE = 15 V, VCE = 0.5 VCES 25 nC Q gc 40 nC td(on) 30 ns tri 30 ns td(off) 600 ns tfi 450 ns Eoff 8m J td(on) 40 ns tri 40 ns Eon 0.3 mJ td(off) 800 ns tfi 600 ns Eoff 15 mJ R thJC 0.62 K/W R thCK 0.25 K/W Inductive load, TJ = 25/G176C IC = IC90 , VGE = 15 V, L = 100 /G109H, VCE = 0.8 VCES , RG = Roff = 10 /G87 Remarks: Switching times may increase for VCE (Clamp) > 0.8  VCES , higher TJ or increased RG Inductive load, TJ = 125/G176C IC = IC90 , VGE = 15 V, L = 100 /G109H VCE = 0.8 VCES , RG = Roff = 10 /G87 Remarks: Switching times may increase for VCE (Clamp) > 0.8  VCES , higher TJ or increased RG TO-247 AD (IXGH) Outline Dim. Millimeter Inches Min. Max. Min. Max. A 19.81 20.32 0.780 0.800 B 20.80 21.46 0.819 0.845 C 15.75 16.26 0.610 0.640 D 3.55 3.65 0.140 0.144 E 4.32 5.49 0.170 0.216 F 5.4 6.2 0.212 0.244 G 1.65 2.13 0.065 0.084 H - 4.5 - 0.177 J 1.0 1.4 0.040 0.055 K 10.8 11.0 0.426 0.433 L 4.7 5.3 0.185 0.209 M 0.4 0.8 0.016 0.031 N 1.5 2.49 0.087 0.102 IXGH 41N60 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025