40N60

IXSM40N60 IXYS | Alldatasheet

Document overview

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• PDF pages: 6

Technical content

Features

• International standard packages
• Guaranteed Short Circuit SOA capability
• Low VCE(sat) - for low on-state conduction losses
• High current handling capability
• MOS Gate turn-on - drive simplicity
• Fast Fall Time for switching speeds up to 20 kHz

Applications

• AC motor speed control
• Uninterruptible power supplies (UPS)
• Welding Advantages
• Easy to mount with 1 screw (TO-247) (isolated mounting screw hole)
• High power density IXYS reserves the right to change limits, test conditions and dimensions. 91546F (4/96)

Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation

3540 Bassett Street, Santa Clara CA 95054

Phone: 408-982-0700, Fax: 408-496-0670 IXSH 40N60 IXSM 40N60 IXSH 40N60A IXSM 40N60A TO-247 AD OutlineSymbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90 ; VCE = 10 V, 16 23 S Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % IC(on) VGE = 15 V, VCE = 10 V 200 A C ies 4500 pF C oes VCE = 25 V, VGE = 0 V, f = 1 MHz 350 pF C res 90 pF Q g 190 260 nC Q ge IC = IC90 , VGE = 15 V, VCE = 0.5 VCES 45 60 nC Q gc 88 120 nC td(on) 55 ns tri 170 ns td(off) 400 ns tfi 40N60 400 ns 40N60A 200 ns Eoff 40N60 5.0 mJ 40N60A 2.5 mJ td(on) 55 ns tri 170 ns Eon 1.7 mJ td(off) 40N60 1000 ns 40N60A 340 525 ns tfi 40N60 600 1500 ns 40N60A 340 700 ns Eoff 40N60 12 mJ 40N60A 6 mJ R thJC 0.42 K/W R thCK 0.25 K/W TO-204AE Outline 1 = Gate 2 = Collector 3 = Emitter Tab = Collector 1 = Gate 2 = Emitter Case = Collector Inductive load, TJ = 25°°°°°C IC = IC90 , VGE = 15 V, L = 100 µH VCE = 0.8 VCES , RG = 2.7 Ω Switching times may increase for VCE (Clamp) > 0.8 • VCES , higher TJ or increased RG Inductive load, TJ = 125°°°°°C IC = IC90 , VGE = 15 V, L = 100 µH VCE = 0.8 VCES , R G = 2.7 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES , higher TJ or increased RG IXYS MOSFETs and IGBTs are covered by one of the following U.S.patents:4,835,592 4,881,108 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

Phone: 408-982-0700, Fax: 408-496-0670 IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 © IXYS Corporation. All rights reserved. IXSH 40N60 IXSM 40N60 IXSH 40N60A IXSM 40N60A TJ - Degrees C -50 -25 0 25 50 75 100 125 150 BV / VGE(th) - Normalized 0.7 0.8 0.9 1.0 1.1 1.2 1.3 BV CES IC = 3mA VGE - Volts 456789 1 0 1 1 1 2 1 3 IC - Amperes TJ - Degrees C -50 -25 0 25 50 75 100 125 150 VCE(sat) - Normalized 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 VGE - Volts 8 9 10 11 12 13 14 15 VCE - Volts VCE - Volts 02468 1 0 1 2 1 4 1 6 1 8 2 0 IC - Amperes 100 120 140 160 180 200 11V 13V VCE - Volts 012345 IC - Amperes 11V 13VTJ = 25°C VGE = 15V TJ = 25°C V GE = 15V TJ = 25°C IC = 20A IC = 40A IC = 80A IC = 20A IC = 40A IC = 80A VGE =15V VCE = 10V TJ = 125°C TJ = 25°C TJ = - 40°C V GE8 th) IC = 4mA Fig. 3 Collector-Emitter Voltage Fig. 4 Temperature Dependence vs. Gate-Emitter Voltage of Output Saturation Voltage Fig. 5 Input Admittance Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage Fig. 1 Saturation Characteristics Fig. 2 Output Characterstics

Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation Phone: 408-982-0700, Fax: 408-496-0670 IXSH 40N60 IXSM 40N60 IXSH 40N60A IXSM 40N60A Time - Seconds Thermal Response - K/W 0.001 0.01 0.1 VCE - Volts 0 100 200 300 400 500 600 700 IC - Amperes 0.01 0.1 100 TJ = 125°C R G = 22Ω dV/dt < 6V/ns Q g- nCoulombs 0 50 100 150 200 250 VGE - Volts IC = 40A VCE = 480V RG - Ohms 0 1 02 03 04 05 0 tfi - nanoseconds 200 400 600 800 1000 IC - Amperes 0 1 02 03 04 05 06 07 08 0 Tfi - nanoseconds 250 500 750 1000 Single Pulse D = Duty Cycle D=0.01 D=0.5 D=0.2 D=0.02 Eoff - millijoulestfi (-A) hi-speed Eof f (-A) hi-speed TJ = 125°C R G = 10Ω Eoff - millijoules tfi (-A), hi-speed Eof f (-A), hi-speed TJ = 125°C IC = 40A D=0.05 D=0.1 Fig.11 Transient Thermal Impedance Fig.9 Gate Charge Characteristic Curve Fig.10 Turn-Off Safe Operating Area Fig.7 Turn-Off Energy per Pulse and Fig.8 Dependence of Turn-Off Energy Fall Time on Collector Current Per Pulse and Fall Time on R G

Phone: 408-982-0700, Fax: 408-496-0670 IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 © IXYS Corporation. All rights reserved.

Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation Phone: 408-982-0700, Fax: 408-496-0670