28F160C3

28F640C3 INTEL | Alldatasheet

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3V o l tI n t e l® Advanced+ Boot Block Flash Memory 28F800C3, 28F160C3, 28F320C3, 28F640C3 Specification Update November 2002 Notice:The 28F800C3, 28F160C3, 28F320C3, 28F640C3 may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current characterized errata are documented in this specification update. Order Number: 297938-014

2 28F800C3, 28F160C3, 28F320C3, 28F640C3, 28F640C3 Specification Update INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN INTEL'STERMSANDCONDITIONSOFSALEFORSUCHPRODUCTS,INTELASSUMESNOLIABILITYWHATSOEVER,ANDINTELDISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY, RELATING TO SALE AND/OR USE OF INTEL PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATINGTO FITNESS FORA PARTICULAR PURPOSE,MERCHANTABILITY,ORINFRINGEMENTOFANY PATENT,COPYRIGHT OROTHER INTELLECTUAL PROPERTY RIGHT. Intel products are not intended for use in medical, life saving, or life sustaining applications. Intel may make changes to specifications and product descriptions at any time, without notice. Designers must not rely on the absence or characteristics of any features or instructions marked "reserved" or "undefined." Intel reserves these for future definition and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to them. The 28F800C3,28F160C3,28F320C3,28F640C3maycontaindesigndefectsorerrorsknownaserratawhichmaycausetheproducttodeviatefrom published specifications. Current characterized errata are available on request. Contact your local Intel sales office or your distributor to obtain the latest specifications and before placing your product order. Copies of documents which have an ordering number and are referenced in this document, or other Intel literature may be obtained by calling 1-800- 548-4725 or by visiting Intel's website at http://www.intel.com. Copyright © Intel Corporation, 2002. *Other names and brands may be claimed as the property of others.

4 28F800C3, 28F160C3, 28F320C3, 28F640C3 Specification Update

28F800C3, 28F160C3, 28F320C3, 28F640C3 Specification Update 5

Revision History

05/13/98 -001 Document includes all known specifications to date (originalversion). 06/02/98 -002 ChangedOrderingInformationfor32-Mbitdensitiesto95nsand115nsavailable access speed only Added µBGA* package mark clarification Added testcondition clarification forI PPD 07/08/98 -003 Added specification change for µBGA* package pinout 08/12/98 -004 Added Errata for Maximum I CCD Change 09/09/98 -005 Added Specification Change for Byte-Wide Protection RegisterAddressing 09/24/98 -006 Added CFIPrimary-Vendor Specific Extended Query Change Added Block Locking Command Sequence Change VIH Maximum Specification Change Removed 48-Lead TSOPPackage Pinout Change(fixed in 290645-002) Removed Protection Register Addressing Change (fixed in 290645-002) Removed CFI Query Structure OutputTable Change (fixed in 290645-002) Removed Ordering Information Change (fixed in 290645-002) Removed µBGA* Package Pinout Change (fixed in 290645-002) Removed Protection Register Addressing Clarification (fixed in 290645-002) Removed µBGA* Package Mark Clarification (fixed in 290645-002) 10/02/98 -007 Removed Byte-Wide Protection Register Addressing Change (fixed in290645- 003) Removed V IH Maximum Change (fixed in 290645-003) Removed IPPD Test Condition Clarification (fixed in 290645-003) Name changed from3VoltAdvanced+BootBlockFlashMemoryFamily 05/04/99 -008 Added Specification Change #1,MaximumICCD Change Added Specification Change #2,CFIPrimary-VendorSpecificExtendedQuery Change Added Specification Change #3,BlockLockingCommandSequenceChange Added Specification Change #4,32-MbMaximumV CCChange Updated CFI feature identification bitdefinition 10/05/00 -009 Renamed Specification Change #4,32-MbMaximumV CCChange,t o0.25µm 32-MbMaximumV CCChange,andmodifiedittoindicatethattheaffectedproduct is the 32-Mbproduct on the 0.25µmprocess Revised Erratum #1,MaximumICCE whenVPP=12V 05/03/01 -010 Added Erratum #2, 28F320C3xCResetFailure 07/23/01 -011 Updated Erratum #2, 28F320C3xCResetFailure,added3.3vVccmax 11/05/01 -012 Added Erratum #3, 28F640C3xCfor Maximum ICCD /I CCS Change 3/05/02 -013 Added Erratum #4, 28F160C3xCEraseResumeIssue 11/21/02 -014 Added Erratum #5,28F160C3xCand28F640C3xCLock/Unlock/Lock-Down Operation

6 28F800C3, 28F160C3, 28F320C3, 28F640C3 Specification Update Preface Preface This document is an update to the specifications contained in the Affected Documents/Related Documents table below.This document is a compilation of device and documentation errata, specification clarifications and changes.It is intended for hardware system manufacturers and software developers of applications, operating systems, or tools. Information types defined in Nomenclature are consolidated into the specification update and are no longer published in other documents. This document may also contain information that was not previously published. AffectedDocuments/RelatedDocuments Nomenclature Errata are design defects or errors.These may cause the behavior of the 28F800C3, 28F160C3, 28F320C3, 28F640C3 to deviate from published specifications.Hardware and software designed to be used with any given stepping must assume that all errata documented for that stepping are present on all devices. Specification Changesare modifications to the current published specifications. These changes will be incorporated in any new release of the specification. Specification Clarificationsdescribe a specification in greater detail or further highlight a specification’s impact to a complex design situation.These clarifications will be incorporated in any newrelease of the specification. Documentation Changesinclude typos, errors, or omissions from the current published specifications. These will beincorporated in any new release ofthe specification. Note: Errata remain in the specification update throughout the product’s life cycle, or until a particular stepping is no longer commercially available. Under these circumstances, errata removed from the specification update are archived and available upon request. Specification changes, specification clarifications, and documentation changes are removed from the specification update when the appropriate changes are made to the appropriate product specification or user documentation (datasheets, manuals, etc.). Title Order 3VoltIntel ® Advanced+BootBlockFlashMemory,28F800C3,28F160C3,28F320C3, 28F640C3(x16) Datasheet 290645-014

28F800C3, 28F160C3, 28F320C3, 28F640C3 Specification Udpate 7 Summary Table of Changes Summary Table of Changes The following table indicates the errata, specification changes, specification clarifications, or documentation changes which apply to the 28F800C3, 28F160C3, 28F320C3, 28F640C3 product. Intel may fix some of the errata in a future stepping of the component, and account for the other outstanding issues through documentation or specification changes as noted.This table uses the following notations: CodesUsedinSummaryTable Stepping X: This erratum exists in the stepping indicated.Specification Change or Clarification that applies to this stepping. (No mark) or (Blank box):Thiserratumisfixedinlistedstepping,orspecificationchangedoesnot apply to listed stepping. Page (Page): Page location of item in this document. Status Doc: Document change or update will be implemented. Plan Fix: This erratum may be fixed in a future stepping of the product. Fixed: This erratum has been previously fixed. NoFix: There are no plans to fix this erratum. Row Change bar to left of table row indicates this erratum is either new or modified from the previous version of the document.

8 28F800C3, 28F160C3, 28F320C3, 28F640C3 Specification Update Summary Table of Changes SpecificationChanges SpecificationClarifications Errata Number Page Status Errata 1 10 Plan Fix “28F320C3xC Maximum ICCE when Vpp=12V” 2 10 Plan Fix “28F320C3xC Reset Failure” 3 11 Plan Fix “28F640C3xC Maximum ICCSand ICCD Change” 4 12 Plan Fix “28F160C3xC Erase Resume Issue” 5 14 Plan Fix “28F160C3xC and 28F640C3xC Lock/Unlock/Lock-Down Operation” 8Mband16Mb-28F160C3and28F800C3 Number Page SpecificationChanges 1 15 Maximum ICCD Change 2 15 CFIPrimary-Vendor Specific Extended Query Change 3 15 Block Locking Command Sequence Change 32Mb-28F320C3 Number Page SpecificationChanges 1 15 Maximum ICCD Change 2 15 CFIPrimary-Vendor Specific Extended Query Change 3 15 Block Locking Command Sequence Change 4 16 0.25µm 32-MbMaximum VCC Change Number Page SpecificationClarifications N/A 17 None in this Specification Update revision DocumentationChanges Number DocumentRevision Page DocumentationChanges N/A 17 None in this SpecificationUpdate revision

28F800C3, 28F160C3, 28F320C3, 28F640C3 Specification Udpate 9 Identification Information Identification Information Markings TheFinishedProcessingOrder(FPO)numbercorrelatesto aspecificdevicesteppingasillustrated in the table below: Note: Device steppings are based on continuous improvements made in manufacturing and testing of the device and representthe current materialshipped. Stepping(1) Identifier A Stepping Ninth digit on topside FPO mark (third line) = anything

10 28F800C3, 28F160C3, 28F320C3, 28F640C3 Specification Update Errata Errata 1. 28F320C3xCMaximumI CCEwhenVpp=12V Problem: When VPP=12V, ICCE Max on 28F320C3xC devices on the 0.18µm deviates from the published specification and increases from 15mA to 25mA. The following is the revised specification for these products. Implication: The increased current requirements may result in increased power drawn from the power supply during limited 12 V production programming. 3 V programming is unaffected. Status: 32-Mb devices on the 0.18mm process are affected. 2. 28F320C3xCResetFailure Problem: The 0.18µm 28F320C3xC devices can unintentionally reset under certain conditions where VPP toggles. Implication: When the reset occurs, any command being executed is interrupted and the flash switches to read array mode. Workaround: There are four workarounds for this erratum: 1) Tie VPP to VCC; 2) If the third and forth digits on the top side FPO mark (third line) is equal or greater than “23”, then VCC may be set from 2.7v to 3.3v. VCC must not exceed 3.3v 3) Set VPP to a static high or static low level as shown here; and Sym Parameter VPP 11.4V–12.6V Unit TestConditionsVCC/ VCCQ 2.7V–3.6V Typ Max ICCE VCC Erase Current 8 25 mA VPP =V PP2 (12V), Erase in Progress Hold VPP Static Norestrictions on other waveforms VPP CE# WE#

28F800C3, 28F160C3, 28F320C3, 28F640C3 Specification Udpate 11 Errata 4) Wait 2 ms after a VPP transition to access the flash device, as shown here. Status: Thiserratumaffectsall0.18µm28F320C3devices.Rootcause hasbeenidentifiedandthiserratum may be fixed in a future stepping of the product. 3. 28F640C3xCMaximumI CCS andICCDChange Problem: On the 0.18µm 28F640C3xC devices, the maximum ICCS and ICCD deviates from the published specification and increases from 15 µA to 20 µA. The following table shows the revised ICCS and ICCD specifications. Implication: The increased current requirements may result in a nominal increase in power drawn from the power supply. Workaround: None Status: This erratum affects all 0.18µm 28F640C3xC devices. Root cause has been identified and this erratum may be fixed in a future stepping of the product. VPP CE# WE# 2ms 2ms Sym Parameter VCC 2.7V–3.6V Unit TestConditionsVCCQ 2.7V–3.6V Note Type Max ICCS VCC Standby Current 1,7 7 20 µA VCC =VCCMax CE# = RP# = VCCQ orduring Program/ Erase Suspend WP# = V CCQ or GND ICCD VCC Deep Power-Down Current 1,7 7 20 µA VCC =VCCMax VCCQ =VCCQMax VIN=VCCQ orGND R P #=G N D±0 .2V NOTE: 1. All currents are in RMS unless otherwise noted. Typical values at nominal VCC,TA =+2 5°C . 2. The test conditions VCCMax, VCCQMax, VCCMin,and VCCQMin referto the maximumorminimum VCC or VCCQ voltage listed atthe top ofeach column.

12 28F800C3, 28F160C3, 28F320C3, 28F640C3 Specification Update Errata 4. 28F160C3xCEraseResumeIssue Problem: On the 0.18µm 28F160C3xC devices, a design anomaly was discovered. During an Erase-Suspend operation,iftheProgram(40H/10H)sequenceisexecuted,underlimitedconditionstheproceeding Erase Resume command (D0H) may not actually resume the device. No customers have reported failures in product applications. Customers who use any version of FDI (Intel Flash Data Integrator) software will not see this issue. If the Read Array command is issued prior to the Erase Resume command, users will not see the issue (typical in XIP applications). Implication: The Resume Command (D0H) may be ignored by the device and will not correctly resume. The device will appear to remain in suspend (via status register). After a reset of the flash device the status register will clear. This failure has been recreated in a lab environment only. Workaround: There are 2 workarounds for this erratum. 1. If FDI (Intel Flash Data Integrator) software is used, users will not see the issue. 2. DuringanErase-Suspend(B0H),usermustissueanyofthefollowingcommandsafterissuing the Program (40H/10H) and data sequence but before issuing the Erase-Resume (D0H) command. Command FirstBusCycle SecondBusCycle Oper Addr Data Oper Addr Data ReadArray Write X FFH Read Configuration Write X 90H Read IA ID Read Query Write X 98H Read QA QD Read Status Register Write X 70H Read X SRD Clear Status Register Write X 50H Program/Erase Suspend Write X B0H Unlock Block Write X 60H Write BA D0H PA:Program Address QA: Query Addr BA:Block Address QD: Query Data IA:Identifier Address ID:Identifier Data SRD:Status Register Data

28F800C3, 28F160C3, 28F320C3, 28F640C3 Specification Udpate 13 Errata Status: Root cause has been identified. New material will be available in August 2002. Figure1.WorkaroundPlacement start EraseSuspend (B0H) Program (40H/10H) andData EraseResume (D0H) Erasemay not Resume start EraseSuspend (B0H) Program (40H/10H) andData EraseResume (D0H) EraseResumed Workaround commands: FFH 50H 60H+D0H 70H 90H 98H B0H ISSUEHERE Any Valid Operation(s) Erase Suspend/Resume Flowchart Standard Sequence Pass Sequence

14 28F800C3, 28F160C3, 28F320C3, 28F640C3 Specification Update Errata 5. 28F160C3xCand28F640C3xCLock/Unlock/Lock-DownOperation Problem: On the 16Mb and 64Mb 0.18µm devices, if CE# is deasserted after any block lock operation and before the next write sequence, the part may performthe same operation on additional blocks. (See waveform below.) Implication: W he nC E #i sde a s s e r t e da f t e rp e r f or m i n gab l o c kl o c ko p e r a t i o nt oas pe c i f i cb l oc ka ndpr i o rt ot h e next write sequence, other blocks may perform the same operation. Workaround: Depending on software implementation, systems may already be effectively managing this erratum. There is currently a workaround for this erratum: Immediately after performing a block lock, unlock, or lock-down operation, perform a valid write sequence beforechip enable (CE#)is deasserted. For example, one possible solution is shown below: 1) Assert CE# and toggle WE# to write the block lock setup command (0x60). 2) Toggle WE# a second time to write the confirm command (lock = 0x01; unlock = 0xD0; lock- down = 0x2F). 3) Toggle WE# a third time (ex: 0xFF- Read Array) before CE# is deasserted. (See waveform below.) Any other valid write sequence will also work (i.e., 0x90 - Read Configuration, 0x40 - Program, 0x20 - Erase). Status: 16Mb and 64Mb devices on the 0.18µm process are affected. Root cause has been identified and this erratum may be fixed in a future stepping of the product. CE# WE# 0x60 0x2F CE# WE# 0x60 0x2F (0xFF)

28F800C3, 28F160C3, 28F320C3, 28F640C3 Specification Udpate 15 Specification Changes Specification Changes 1. MaximumI CCDChange Issue: The maximum ICCD increases from 20 µA to 25 µA on 0.25µm 8-Mb, 16-Mb and 32-Mb versions only. The following table shows the revised ICCD specification. 2. CFIPrimary-VendorSpecificExtendedQueryChange Issue: The value for address 3A in the CFI Primary-Vendor Specific Extended Query Table (Optional Feature and Command Support) has been changed from 0Eh to 66h. CFI templates that support the Advanced+ Boot Block features will recognize block locking and unlocking support on affected devices. The CFI Primary-Vendor Specific Extended Query Table will be corrected on future steppings. 3. BlockLockingCommandSequenceChange Issue: A Read Status Register command must be issued following an Unlock Block command to a block that is in the Lockdown or Locked-Lockdown state. WP# must be held valid for all three bus Sym Parameter VCC 2.7V–3.6V Unit TestConditionsVCCQ 2.7V–3.6V Note Type Max ICCD VCC Deep Power-Down Current 1,7 7 25 µA VCC =VCCMax VCCQ =VCCQMax VIN=VCCQ orGND RP #=G N D±0 .2V NOTE: 1. All currents are in RMS unless otherwise noted. Typical values at nominal VCC,TA =+2 5°C . 2. The test conditions VCCMax, VCCQMax, VCCMin,and VCCQMin referto the maximumorminimum VCC or VCCQ voltage listed atthe top ofeach column. Offset(1) Length (bytes) Description 8-Mbit, 16-Mbit, 32-Mbit (P+5)h 04h OptionalFeature & Command Support bit 0 Chip Erase Supported bit 1 Suspend Erase Supported bit 2 Suspend Program Supported bit 3 Legacy Lock/Unlock Supported bit 4 Queued Erase Supported bit 5 IBL Supported (2) bit 6 OTP Bits Supported(3) bit 7 Page Mode Reads Supported bit 8 Synchronous Burst Supported bits 9–31 reserved forfuture use; undefined bits are “0” (1=yes, 0=no) (1=yes,0 = n o ) (1=yes,0=no) (1=yes,0=no) (1=yes,0=no) (1=yes,0=no) (1=yes,0 = n o ) (1=yes,0=no) (1=yes,0=no) 3A:66 3B: 00 3C: 00 3D: 00 NOTES: 1. The variable P is a pointerthat is defined at offset 15H Table D5 2. IIBL refers to “Instant,IndividualBlock Locking.” 3 .O T Pr e fe rst o“ O n eT im eP r o g r a m m a bl e . ”

16 28F800C3, 28F160C3, 28F320C3, 28F640C3 Specification Update Specification Changes cycles. See the3 Volt Advanced+ Boot Block Flash Memorydatasheet for a description of the Lockdown and Locked-Lockdown states. Customers may need to modify their software. Note: If the Locking Operations Flowchart (Figure 16 in the datasheet) is implemented for locking operations with WP# held valid through the Read Status Register command, software modifications are not necessary. Future steppings will require WP# valid only through the Write Lock, Unlock, or Lockdown commands 4. 0.25 µm32-MbMaximumV CCChange Issue: The maximum VCC decreases from 3.6 V to 3.3 V on 0.25µm 32-Mb versions only. The following table shows the revised VCC specification. Other implied specification changes, as a result of the VCC change, are described in the following table: The maximum VCC has changed on the 0.25µm 32-Mb devices. The maximum VCC specification has not changed on the 16-Mb, 8-Mb. This may become an issue if the system voltage regulator usedhasaV CC rangetolerancethatisoutsidethenewspecification,whichmaycausethedeviceto operate in a condition which is outside the specifications of the current datasheet. Command Notes FirstBusCycle SecondBussCycle ThirdBusCycle Oper Addr Data Oper Addr Data Oper Addr Data Unlock Block 4 Write X 60H Write BA D0H Write X 70H Symbol Parameter Notes Min Max Units VCC VCC Supply Voltage 1 2.7 3.3 Volts Symbol Parameter Notes Min Max Units VCC1 VCC Supply Voltage 1 2.7 3.3 Volts VCC2 VCC Supply Voltage 1 3.0 3.3 Volts VCCQ1 I/OSupply Voltage 1 2.7 3.3 Volts VPP1 Supply Voltage 1 1.65 3.3 Volts NOTE: 1. VCC and VCCQ must share the same the same supply when they are in the VCC1 range.

28F800C3, 28F160C3, 28F320C3, 28F640C3 Specification Udpate 17 Specification Clarifications Specification Clarifications There are no specification clarifications in this Specification Update revision. Documentation Changes There are no documentation changes in this Specification Update revision.

18 28F800C3, 28F160C3, 28F320C3, 28F640C3 Specification Update Documentation Changes