IXFK25N90 IXYS | Alldatasheet

Document overview

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Technical content

Features

 International standard packages  Low R DS (on) HDMOS TM process  Rugged polysilicon gate cell structure  Unclamped Inductive Switching (UIS) rated  Low package inductance - easy to drive and to protect  Fast intrinsic rectifier

Applications

 DC-DC converters  Battery chargers  Switched-mode and resonant-mode power supplies  DC choppers  AC motor control  Temperature and lighting controls Advantages  PLUS 247 TM package for clip or spring mounting  Space savings  High power density HiPerFETTM Power MOSFETs 98553D (9/99) PLUS 247TM (IXFX) G D (TAB) G = Gate D = Drain S = Source TAB = Drain S G D (TAB) TO-264 AA (IXFK) VDSS IDSS R DS(on) trr 900 V 26 A 0.30 /G87250 ns 900 V 25 A 0.33 /G87250 ns IXFK/IXFX 26N90 IXFK/IXFX 25N90 Preliminary data sheet S IXYS reserves the right to change limits, test conditions, and dimensions.

2 - 4© 2000 IXYS All rights reserved Symbol Test Conditions Characteristic Values (TJ = 25/G176C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5  ID25 Note 1 18 28 S C iss 8.7 10.8 nF C oss VGS = 0 V, VDS = 25 V, f = 1 MHz 800 1000 pF C rss 300 375 pF td(on) 60 ns tr VGS = 10 V, VDS = 0.5  VDSS , ID = 0.5  ID25 35 ns td(off) R G = 1/G32/G87 (External), 130 ns tf 24 ns Q g(on) 240 nC Q gs VGS = 10 V, VDS = 0.5  VDSS , ID = 0.5  ID25 56 nC Q gd 107 nC R thJC 0.22 K/W R thCK 0.15 K/W Source-Drain Diode Characteristic Values (TJ = 25/G176C, unless otherwise specified) Symbol Test Conditions min. typ. max. IS VGS = 0 V 26N90 26 A 25N90 25 ISM Repetitive; 26N90 104 A pulse width limited by TJM 25N90 100 VSD IF = IS, VGS = 0 V, Note 1 1.5 V trr 250 ns Q RM 1.4 /G109C IRM 10 A IF = IS, -di/dt = 100 A//G109s, VR = 100 V Note: 1. Pulse test, t /G163/G32300 /G109s, duty cycle d/G32/G163 2 % IXFK 25N90 IXFX 25N90 IXFK 26N90 IXFX 26N90 PLUS247 TM (IXFX) Outline Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21 .190 .205 A1 2.29 2.54 .090 .100 A2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b1 1.91 2.13 .075 .084 b2 2.92 3.12 .115 .123 C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 .244 R 4.32 4.83 .170 .190 Millimeter Inches Min. Max. Min. Max. A 4.82 5.13 .190 .202 A1 2.54 2.89 .100 .114 A2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 D 25.91 26.16 1.020 1.030 E 19.81 19.96 .780 .786 e 5.46 BSC .215 BSC J 0.00 0.25 .000 .010 K 0.00 0.25 .000 .010 L 20.32 20.83 .800 .820 L1 2.29 2.59 .090 .102 P 3.17 3.66 .125 .144 Q 6.07 6.27 .239 .247 Q1 8.38 8.69 .330 .342 R 3.81 4.32 .150 .170 R1 1.78 2.29 .070 .090 S 6.04 6.30 .238 .248 T 1.57 1.83 .062 .072 Dim. TO-264 AA (IXFK) Outline IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025