IXGH25N120 IXYS | Alldatasheet
Document overview
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Technical content
Features
l International standard package JEDEC TO-247 AD l 2nd generation HDMOSTM process l Low VCE(sat) - for low on-state conduction losses l MOS Gate turn-on - drive simplicity
Applications
l DC servo and robot drives l DC choppers l Uninterruptible power supplies (UPS) l Switch-mode and resonant-mode power supplies l Capacitor discharge systems l Solid state relays Advantages l Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) l High power density 92783D (3/96) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C5 0 A IC90 TC = 90°C2 5 A ICM TC = 25°C, 1 ms 100 A SSOA VGE = 15 V, TVJ = 125°C, RG = 33 Ω ICM = 50 A (RBSOA) Clamped inductive load, L = 100 µH @ 0.8 V CES PC TC = 25°C 200 W TJ -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C M d Mounting torque (M3) 1.13/10 Nm/lb.in. Weight 6g Maximum lead temperature for soldering 300 °C 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. BV CES IC = 3 mA, VGE = 0 V 1200 V VGE(th) IC = 250 µA, VCE = VGE 2.5 6 V ICES VCE = 0.8 • VCES TJ = 25°C 250 µA VGE = 0 V T J = 125°C1 m A IGES VCE = 0 V, VGE = ±20 V ±100 nA VCE(sat) IC = IC90 , VGE = 15 V 25N120 3 V 25N120A 4 V
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 IXYS reserves the right to change limits, test conditions, and dimensions. IXGH 25N120 IXGH 25N120A Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90 ; VCE = 10 V, 8 15 S Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % C ies 2750 pF C oes VCE = 25 V, VGE = 0 V, f = 1 MHz 200 pF C res 50 pF Q g 130 180 nC Q ge IC = IC90 , VGE = 15 V, VCE = 0.5 VCES 25 50 nC Q gc 55 90 nC td(on) 100 ns tri 250 ns td(off) 650 1000 ns tfi 25N120 700 ns 25N120A 600 800 ns Eoff 25N120A 11 mJ td(on) 100 ns tri 250 ns Eon 4.2 mJ td(off) 720 1000 ns tfi 25N120 1200 ns 25N120A 800 1200 ns Eoff 25N120A 15 mJ R thJC 0.62 K/W R thCK 0.25 K/W TO-247 AD Outline Inductive load, TJ = 25°°°°°C IC = IC90 , VGE = 15 V, L = 100 µH, VCE = 0.8 VCES , RG = Roff = 33 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES , higher TJ or increased RG Inductive load, TJ = 125°°°°°C IC = IC90 , VGE = 15 V, L = 100 µH VCE = 0.8 VCES , RG = Roff = 33 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES , higher TJ or increased RG 1 = Gate 2 = Collector 3 = Emitter Tab = Collector