IXGH20N60BD1 IXYS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

Features

 International standard packages  High frequency IGBT and antiparallel FRED in one package  High current handling capability  HiPerFAST TM HDMOS TM process  MOS Gate turn-on -drive simplicity

Applications

 Uninterruptible power supplies (UPS)  Switched-mode and resonant-mode power supplies  AC motor speed control  DC servo and robot drives  DC choppers Advantages  Space savings (two devices in one package)  High power density  Suitable for surface mounting  Very low switching losses for high frequency applications  Easy to mount with 1 screw,TO-247 (insulated mounting screw hole) Preliminary data IXYS reserves the right to change limits, test conditions, and dimensions.

2 - 2© 2000 IXYS All rights reserved Symbol Test Conditions Characteristic Values (TJ = 25/G176C, unless otherwise specified) min. typ. max. gfs IC = IC90 ; VCE = 10 V, 9 17 S Pulse test, t /G163 300 /G109s, duty cycle /G163 2 % C ies 1500 pF C oes VCE = 25 V, VGE = 0 V, f = 1 MHz 150 pF C res 40 pF Q g 55 nC Q ge IC = IC90 , VGE = 15 V, VCE = 0.5 VCES 12 nC Q gc 20 nC td(on) 15 ns tri 25 ns td(off) 110 200 ns tfi 100 150 ns Eoff 0.7 1.0 mJ td(on) 15 ns tri 35 ns Eon 0.75 mJ td(off) 220 ns tfi 140 ns Eoff 1.2 mJ R thJC 0.83 K/W R thCK TO-247 0.25 K/W Reverse Diode (FRED) Characteristic Values (TJ = 25/G176C, unless otherwise specified) Symbol Test Conditions min. typ. max. VF IF = 30A, VGE = 0 V, TJ = 150/G176C 1.6 V Pulse test, t /G163/G32300 /G109s, duty cycle d/G32/G163 2 % TJ = 25/G176C 2.5 V IRM IF = 30A, VGE = 0 V, -diF/dt = 100 A//G109s6 A trr VR = 100 V T J =100/G176C 100 ns IF = 1 A; -di/dt = 100 A//G109s; VR = 30 V TJ = 25/G176C2 5 n s R thJC 1.0 K/W Inductive load, TJ = 25/G176C IC = IC90 , VGE = 15 V, L = 100 /G109H, VCE = 0.8 VCES , RG = Roff = 10 /G87 Remarks: Switching times may increase for VCE (Clamp) > 0.8  VCES , higher TJ or increased RG Inductive load, TJ = 125/G176C IC = IC90 , VGE = 15 V, L = 100 /G109H VCE = 0.8 VCES , RG = Roff = 10 /G87 Remarks: Switching times may increase for VCE (Clamp) > 0.8  VCES , higher TJ or increased RG IXGH 20N60BD1 IXGT 20N60BD1 TO-247 AD (IXGH) Outline Dim. Millimeter Inches Min. Max. Min. Max. A 19.81 20.32 0.780 0.800 B 20.80 21.46 0.819 0.845 C 15.75 16.26 0.610 0.640 D 3.55 3.65 0.140 0.144 E 4.32 5.49 0.170 0.216 F 5.4 6.2 0.212 0.244 G 1.65 2.13 0.065 0.084 H - 4.5 - 0.177 J 1.0 1.4 0.040 0.055 K 10.8 11.0 0.426 0.433 L 4.7 5.3 0.185 0.209 M 0.4 0.8 0.016 0.031 N 1.5 2.49 0.087 0.102 TO-268AA (D3 PAK) Dim. Millimeter Inches Min. Max. Min. Max. A 4.9 5.1 .193 .201 A 1 2.7 2.9 .106 .114 A 2 .02 .25 .001 .010 b 1.15 1.45 .045 .057 b2 1.9 2.1 .75 .83 C .4 .65 .016 .026 D 13.80 14.00 .543 .551 E 15.85 16.05 .624 .632 E 1 13.3 13.6 .524 .535 e 5.45 BSC .215 BSC H 18.70 19.10 .736 .752 L 2.40 2.70 .094 .106 L1 1.20 1.40 .047 .055 L2 1.00 1.15 .039 .045 L3 0.25 BSC .010 BSC L4 3.80 4.10 .150 .161 Min. Recommended Footprint IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025