20N60B

IXGH20N60B IXYS | Alldatasheet

Document overview

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Technical content

Features

 International standard packages JEDEC TO-268 surface mountable and JEDEC TO-247 AD  High current handling capability  Latest generation HDMOS TM process  MOS Gate turn-on - drive simplicity

Applications

 AC motor speed control  DC servo and robot drives  DC choppers  Uninterruptible power supplies (UPS)  Switched-mode and resonant-mode power supplies Advantages  Space savings (two devices in one package)  High power density  Suitable for surface mounting  Switching speed for high frequency  Easy to mount with 1 screw,TO-247 (isolated mounting screw hole) IXGH 20N60B IXGT 20N60B TO-268 (D3) (IXGT) (TAB) G E VCES = 600 V IC25 = 4 0 A VCE(sat)typ = 1.7 V tfi(typ) = 100 ns IXYS reserves the right to change limits, test conditions, and dimensions.

2 - 4© 2000 IXYS All rights reserved Inductive load, TJ = 25/G176C IC = IC90 , VGE = 15 V, L = 100 /G109H, VCE = 0.8 VCES , RG = Roff = 10 /G87 Inductive load, TJ = 125/G176C IC = IC90 , VGE = 15 V, L = 100 /G109H VCE = 0.8 VCES , RG = Roff = 10 /G87 Note 1 Symbol Test Conditions Characteristic Values (TJ = 25/G176C, unless otherwise specified) min. typ. max. gfs IC = IC90 ; VCE = 10 V, 9 17 S Pulse test, t /G163 300 /G109s, duty cycle /G163 2 % C ies 1500 pF C oes VCE = 25 V, VGE = 0 V, f = 1 MHz 175 pF C res 40 pF Q g 90 nC Q ge IC = IC90 , VGE = 15 V, VCE = 0.5 VCES 11 nC Q gc 30 nC td(on) 15 ns tri 35 ns Eon 0.15 mJ td(off) 150 200 ns tfi 100 150 ns Eoff Note 1 0.7 1.0 mJ td(on) 15 ns tri 35 ns Eon 0.15 mJ td(off) 220 ns tfi 140 ns Eoff 1.2 mJ R thJC 0.83 K/W R thCK 0.25 K/W Note 1: Switching times may increase for VCE (Clamp) > 0.8  VCES , higher TJ or increased RG IXGH 20N60B IXGT 20N60B TO-247 AD (IXGH) Outline Dim. Millimeter Inches Min. Max. Min. Max. A 19.81 20.32 0.780 0.800 B 20.80 21.46 0.819 0.845 C 15.75 16.26 0.610 0.640 D 3.55 3.65 0.140 0.144 E 4.32 5.49 0.170 0.216 F 5.4 6.2 0.212 0.244 G 1.65 2.13 0.065 0.084 H - 4.5 - 0.177 J 1.0 1.4 0.040 0.055 K 10.8 11.0 0.426 0.433 L 4.7 5.3 0.185 0.209 M 0.4 0.8 0.016 0.031 N 1.5 2.49 0.087 0.102 Dim. Millimeter Inches Min. Max. Min. Max. A 4.9 5.1 .193 .201 A 1 2.7 2.9 .106 .114 A 2 .02 .25 .001 .010 b 1.15 1.45 .045 .057 b2 1.9 2.1 .75 .83 C .4 .65 .016 .026 D 13.80 14.00 .543 .551 E 15.85 16.05 .624 .632 E 1 13.3 13.6 .524 .535 e 5.45 BSC .215 BSC H 18.70 19.10 .736 .752 L 2.40 2.70 .094 .106 L1 1.20 1.40 .047 .055 L2 1.00 1.15 .039 .045 L3 0.25 BSC .010 BSC L4 3.80 4.10 .150 .161 TO-268AA (D3 PAK) Min. Recommended Footprint IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

3 - 4© 2000 IXYS All rights reserved VCE - Volts 012345 IC - Am eres 100 VCE -Volts 0 5 10 15 20 25 30 35 40 Capacitance - pF 100 1000 TJ - Degrees C 25 50 75 100 125 150 VCE (sat) - Normalized 0.50 0.75 1.00 1.25 1.50 1.75 VCE - Volts 012345 IC - Amperes 100 VGE - Volts 3456789 1 0 IC - Amperes 100 VCE - Volts 02468 1 0 IC - Amperes 120 160 200 13V 11V VCE = 10V VGE = 15V 13V 11V TJ = 25°C VGE = 15VTJ = 25°C IC = 10A IC = 20A IC = 40A TJ = 125°C f = 1Mhz 5V 5V VGE = 15V TJ = 25°C TJ = 125°C VGE = 15V 13V 11V C iss C oss C rss 4000 IXGH 20N60B IXGT 20N60B Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics Fig. 3. High Temperature Output Characteristics Fig. 4. Temperature Dependence of VCE(sat) Fig. 5. Admittance Curves Fig. 6. Capacitance Curves

4 - 4© 2000 IXYS All rights reserved Pulse Width - Seconds ZthJC (K/W) 0.001 0.01 0.1 D=0.2 VCE - Volts 0 100 200 300 400 500 600 IC - Amperes 0.1 100 Q g - nanocoulombs 0 2 04 06 08 0 1 0 0 VGE - Volts R G - Ohms 0 1 02 03 04 05 06 0 E(OFF) - millijoules E(ON) - millijoules IC - Amperes 0 1 02 03 04 05 0 E(OFF) - milliJoules E(ON) - millijoules 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VCE = 300V IC = 10A IC = 20A E(ON) E(OFF) TJ = -55 to +125°C R G = 4.7/G01 dV/dt < 5V/ns D=0.5 D=0.1 D=0.05 D=0.02 D=0.01 Single pulse D = Duty Cycle R G = 10/G01 TJ = 125°C E(ON) IC =40A E(OFF) TJ = 125°C E(ON) IC = 20A E(ON) E(OFF) E(OFF) Fig. 9. Gate Charge Fig. 10. Turn-off Safe Operating Area Fig. 11. IGBT Transient Thermal Resistance Junction-to-Case IXGH 20N60B IXGT 20N60B