200N60A2

IXGN200N60A2 IXYS | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 5

Technical content

Features

z International standard package miniBLOC z Aluminium nitride isolation - high power dissipation z Isolation voltage 3000 V~ z Very high current IGBT z Low VCE(sat) for minimum on-state conduction losses z MOS Gate turn-on - drive simplicity z Low collector-to-case capacitance (< 50 pF) z Low package inductance (< 5 nH) - easy to drive and to protect

Applications

z DC servo and robot drives z DC choppers z Uninterruptible power supplies (UPS) z Switch-mode and resonant-mode power supplies Advantages z Easy to mount with 2 screws z Space savings z High power density E G = Gate, C = Collector, E = Emitter c either emitter terminal can be used as Main or Kelvin Emitter G E c E c C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 200 A IC110 TC = 110°C 100 A ICM TC = 25°C, 1 ms 400 A SSOA VGE = 15 V, TVJ = 125°C, RG = 2.0 Ω ICM = 200 A (RBSOA) Clamped inductive load @ 0.8 V CES PC TC = 25°C 700 W TJ -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C VISOL 50/60 Hz t = 1 min 2500 V~ IISOL ≤ 1 mA t = 1 s 3000 V~ Md Mounting torque 1.5/13 Nm/lb.in. Terminal connection torque (M4) 1.5/13 Nm/lb.in. Weight 30 g Symbol Test Conditions Characteristic Values (TJ = 25 °C, unless otherwise specified) min. typ. max. VGE(th) IC = 1 mA, VCE = VGE 2.5 5.5 V ICES VCE = VCES TJ = 25°C5 0 µA VGE = 0 V T J = 125°C2 m A IGES VCE = 0 V, VGE = ±20 V ±400 nA VCE(sat) IC = IC110, VGE = 15 V 1.2 1.35 V DS99087A(11/03) IGBT Optimized for Switching up to 5 kHz Preliminary Data Sheet

IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 SOT-227B miniBLOCSymbol Test Conditions Characteristic Values (TJ = 25 °C, unless otherwise specified) min. typ. max. gfs IC = 60 A; VCE = 10 V, 70 106 S Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % Cies 9900 pF Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 740 pF Cres 190 pF Qg 480 nC Qge IC = IC110, VGE = 15 V, VCE = 0.5 VCES 63 nC Qgc 169 nC td(on) 60 ns tri 45 ns td(off) 360 ns tfi 250 ns Eoff 5m J td(on) 60 ns tri 60 ns Eon 3.0 mJ td(off) 290 ns tfi 660 ns Eoff 12 mJ RthJC 0.17 K/W RthCK 0.05 K/W Inductive load, TJ = 25°°°°°C IC = IC110, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 2.0 Ω Inductive load, TJ = 125°°°°°C IC = IC110, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 2.4 Ω IXGN 200N60A2

© 2003 IXYS All rights reserved Fig. 2. Extended Output Characteristics @ 25 deg. C 100 150 200 250 300 350 0 0.5 1 1.5 2 2.5 3 3.5 4 VC E - Volts I C - Amperes VGE = 15V 13V 11V Fig. 3. Output Characteristics @ 125 Deg. C 100 125 150 175 200 VCE - Volts I C - Amperes VGE = 15V 13V 11V Fig. 1. Output Characteristics @ 25 Deg. C 100 125 150 175 200 VC E - Volts I C - Amperes VGE = 15V 13V 11V Fig. 4. Dependence of V CE(sat) on Temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade V C E (sat)- Normalized IC = 100A IC = 50A VGE = 15V IC = 200A Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emiiter Voltage 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 56789 1 0 1 1 1 2 1 3 1 4 1 5 1 6 1 7 VG E - Volts VC E - Volts TJ = 25ºC IC = 200A 100A 50A Fig. 6. Input Admittance 100 150 200 250 300 350 4 4.5 5 5.5 6 6.5 7 7.5 8 VG E - Volts I C - Amperes TJ = 125ºC 25ºC -40ºC IXGN 200N60A2

IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 Fig. 7. Transconductance 100 120 140 160 180 200 0 50 100 150 200 250 300 350 I C - Amperes g f s - Siemens TJ = -40ºC 25ºC 125ºC Fig. 11. Gate Charge 0 50 100 150 200 250 300 350 400 450 500 Q G - nanoCoulombs VG E - Volts VCE = 300V IC = 100A IG = 10mA Fig. 12. Capacitance 100 1000 10000 100000 0 5 10 15 20 25 30 35 40 VC E - Volts Capacitance - p F Cies Coes Cres f = 1 M Hz Fig. 8. Dependence of E off on RG 0 5 10 15 20 25 R G - Ohm s E off - milliJoules IC = 50A TJ = 125ºC VGE = 15V VCE = 480V IC = 100A IC = 200A Fig. 9. Dependence of E off on Ic 50 75 100 125 150 175 200 I C - Amperes E off - MilliJoules RG = 2.4 Ω VGE = 15V VCE = 480V TJ = 125ºC TJ = 25ºC Fig. 10. Dependence of E off on Temperature 25 35 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade E off - milliJoules IC = 200A RG = 2.4 Ω VGE = 15V VCE = 480V IC = 100A IC = 50A IXGN 200N60A2

© 2003 IXYS All rights reserved F ig. 13. Maximum Transient Thermal Resistance 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 1 10 100 1000 Pulse Width - milliseconds R (th) J C - (ºC/W) IXGN 200N60A2