12N65

12N65 HAOHAI | Alldatasheet

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通俗命名 12N65 公司型号 H12N65P H12N65F Junction-to-Ambient -- HAOHAI ELECTRONICS CO., LTD. 致力於中國功率器件優秀供應商 V/ns H12N65C-PF-BDB kkg@kkg.com.cn 300 W/℃ W * Drain current limited by maximum junction temperature （TO-220F ） V A -50 ~ +150 V mJ mJ A ■ Thermal Resistance Characteristics 第1页 共7页http://www.szhhe.com Symbol Parameter TO-220AB Drain-Source Voltage 封装标识 条管装 盒装箱装 包装方式 每管数量 50Pcs ■Features Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge: 38nC(Typ.) Extended Safe Operating Area Lower RDS(ON): 0.67Ω(Typ.) @ VGS=10V 100% Avalanche Tested Package: TO-220AB & TO-220F ■特点 导通电阻低、开关速度快、驱动简单、可并联使用、输入阻抗高、符合RoHS规范 ■应用范围 开关电源、LCD电源、LED驱动电源、机箱电源、UPS电源、 各种充电器、电子整流器、电子变压器、逆变器、控制器、转换器、 风扇控制板、以及电源适配器、汽车稳压器等线性放大和功率开关电路 ■封装形式 TO-220P 或 TO-220AB（半塑封） TO-220F 或 TO-220FP（全塑封） 12N65 Series Pin Assignment 12N65 Series 12A, 650V, N沟道 场效应晶体管 产品参数规格书 N-Channel MOSFET P: TO-220AB F: TO-220FP H HAOHAI 工业型号 每箱数量 5000PcsFQP12N65C FQPF12N65C 每盒数量 1000Pcs ■ Absolute Maximum Ratings（TC=25℃ unless otherwise specified） Symbol Parameter Value Units TO-220AB TO-220F 650 600 ID Drain Current－Continuous (TC=25℃) 12 12* Drain Curren－Continuous (TC=100℃) 7.4 7.4* VDSS IDM Drain Current – Pulsed (Note 1) 48 48* VGS Gate-Source Voltage ±30 ±30 EAS Single Pulsed Avalanche Energy (Note 2) 860 870 IAR Avalanche Current (Note 1)1 2 1 2 EAR Repetitive Avalanche Energy (Note 1) 22.5 22.5 dv/dt Peak Diode Recovery dv/dt ( Note 3) 4.5 4.5 PD Power Dissipation (TC=25℃) 225 51 Power Dissipation - Derate above 25℃ 1.78 0.41 TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds -- 0.56 Units Typ. Max. Typ. Max. TO-220F ℃/WRθCS Case-to-Sink 0.5 -- -- -- RθJA RθJC Junction-to-Case 62.5 -- 62.5 -- 2.43 ID=12A BVDSS=650V RDS(on)=0.67Ω Series Symbol: 1 G 2 D 3 S 3-Lead Plastic TO-220AB Package Code: P Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source 3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source

12A, 650V, N沟道 场效应晶体管 产品参数规格书 N-Channel MOSFET nCQgs --Turn-On Rise Time IDSS Zero Gate Voltage Drain Current VDS=520V, TC=125℃ -- --VDS=650V, VGS=0V 190 μA -- 1 140 -- 100 180 Input Capacitance VDS=25V VGS=0V f=1.0MHz Gate-Source Charge -- Qg Turn-Off Fall Time VDS=520V ID=12A, VGS=10V (Note 4,5) Continuous Source-Drain Diode Forward Current tf Total Gate Charge td(off) Turn-Off Delay Time Source-Drain Diode Maximum Ratings and Characteristics VDS=325V ID=12A RG=25Ω (Note 4,5) Qgd Gate-Drain Charge -- 0.5 td(on) Crss Reverse Transfer Capacitance -- Coss tr --Turn-On Time nS VGS=10V, ID=6A V/℃ID=250μA, Referenced to 25℃ 0.67 0.78 2385 pF Switching Characteristics Ciss -- -- 240 185Output Capacitance ISM --Pulsed Source-Drain Diode Forward Current Dynamic Characteristics -- 48 1835 IS -- Test ConditionsParameter ■ Electrical Characteristics（TC=25℃ unless otherwise specified） Typ.Min. Units Max. VVGS Gate Threshold Voltage VDS=VGS, ID=250μA Symbol 4.0-- △BVDSS/△TJ Breakdown Voltage Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance Off Characteristics BVDSS Drain-Source Breakdown Voltage Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L=11mH, I AS =12A, V DD =50V, R G =25Ω, Starting T J =25 ℃ 3. I SD ≤12A, di/dt ≤200A/μS, V DD ≤BV DSS , Starting T J =25 ℃ 4. Pulse Test: Pulse Width ≤300μS, Duty Cycle ≤2% 5. Essentially Independent of Operating Temperature IS=12A, VGS=0V diF/dt=100μA/μs (Note 4) -- nS420 H12N65C-PF-BDB Qrr 4.9 -- kkg@kkg.com.cn第2页 共7页 μC VSD Source-Drain Diode Forward Voltage HAOHAI ELECTRONICS CO., LTD. Reverse Recovery Charge trr -- http://www.szhhe.com Reverse Recovery Time IS=12A, VGS=0V -- 致力於中國功率器件優秀供應商 Gate-Body Leakage Current, Forward 13 -- 280 -- 1.4 V A -- 12 V Ω 2.0 On Characteristics 650 VGS=0V, ID=250μA nA IGSSR Gate-Body Leakage Current, Reverse -- IGSSF VGS= +30V, VDS=0V VGS= -30V, VDS=1V -- -100

12A, 650V, N沟道 场效应晶体管 产品参数规格书 N-Channel MOSFET VDS, Drain-Source Voltage [V] Q G, Total Gate Charge [nC] Fig-5. Capacitance Characteristics Fig-6. Gate Charge Characteristics VGS, Gate-Source Voltage [V] Capacitances [pF] 第3页 共7页 ID, Drain Current [A] VDS, Drain-Source Voltage [V] V GS, Gate-Source Voltage [V] Fig-1. On Region Characteristics Fig-2. Transfer Characteristics Fig-3. On Resistance Variation vs Fi111g-3. Drain Current and Gate Voltage ID, Drain Current [A] Fig-4. Body Diode Forward Voltage Variation Fig-4. with Source Current and Temperature http://www.szhhe.com RDS(ON) [Ω], Drain-Source On-Resistance IDR, Reverse Drain Current [A] ID, Drain Current [A] V SD, Source-Drain Voltage [V] Typical Performance Characteristics kkg@kkg.com.cn H12N65C-PF-BDB致力於中國功率器件優秀供應商HAOHAI ELECTRONICS CO., LTD.

12A, 650V, N沟道 场效应晶体管 产品参数规格书 N-Channel MOSFET kkg@kkg.com.cn ID, Drain Current [A] ID, Drain Current [A] Fig-9. Maximum Safe Operating Area Fig-10. Maximum Drain Current vs Case Temperature 第4页 共7页 VDS, Drain-Source Voltage [V] TC, Case Temperature [℃] t1,Square Wave Pulse Duration [sec] Fig-11. Transient Thermal Response Curve ZθJC(t), Thermal Response TJ, Junction Temperature [℃]T J, Junction Temperature [℃] RDS(ON), (Normalized) Drain-Source On-Resistance HAOHAI ELECTRONICS CO., LTD. 致力於中國功率器件優秀供應商 H12N65C-PF-BDB http://www.szhhe.com Typical Performance Characteristics (Continued) Fig-7. Breakdown Voltage Variation vs Temperature Fig-8. On-Resistance Variation vs Temperature BVDSS, (Normalized) Drain-Source Breakdown Voltage

12A, 650V, N沟道 场效应晶体管 产品参数规格书 N-Channel MOSFET Fig-15. Peak Diode Recovery dv/dt Test Circuit & Waveforms Fig-13. Resistive Switching Test Circuit & Waveforms Fig-14. Unclamped Inductive Switching Test Circuit & Waveforms Fig-12. Gate Charge Test Circuit & Waveform H12N65C-PF-BDB 第5页 共7页 kkg@kkg.com.cn HAOHAI ELECTRONICS CO., LTD. http://www.szhhe.com 致力於中國功率器件優秀供應商

12A, 650V, N沟道 场效应晶体管 产品参数规格书 N-Channel MOSFET kkg@kkg.com.cn HAOHAI ELECTRONICS CO., LTD. 致力於中國功率器件優秀供應商 H12N65C-PF-BDB P 14.48 15.87 http://www.szhhe.com 第6页 共7页 N -- *2.54 O 12.70 14.27 L 2.54 3.42 M 1.14 1.40 J 3.00 4.00 K 0.75 0.95 H -- *16.25 I -- *3.83 F 2.03 2.92 G 9.66 10.28 D 1.15 1.39 E 0.35 0.60 B 8.38 8.90 C 4.40 4.70 ■ TO-220F（TO-220FP） Dimension（封装尺寸数据, 单位: mm） 元件打印标识 DIM Min. Max. A 5.58 7.49 α1/2/4/5 - *5° α3 - *27° N 0.90 1.47 O 2.00 2.96 L 12.48 13.60 M 15.67 16.20 J 0.60 1.00 K 2.34 2.74 G 3.10 3.60 I 2.70 3.43 E 0.45 0.80 F 9.80 10.36 C 4.40 4.90 D 2.34 3.00 ■ TO-220P（TO-220AB） Dimension（封装尺寸数据, 单位: mm） 元件打印标识 DIM Min. Max. A 6.48 7.40 PACKAGE DIMENSIONS 左上角: LOGO AAA: 芯片代码 BBBBB: 批次识别码 aabb: 生产批号 aabb: 其中: aabb: aa: 出厂年份 aabb: bb: 出厂自然周 批号: bb: （01~53） XXXXXXXX: 器件型号 左上角: LOGO AAA: 芯片代码 XXXXXXXX: 器件型号 BBBBB: 批次识别码 aabb: 生产批号 aabb: 其中: aabb: aa: 出厂年份 aabb: bb: 出厂自然周 批号: bb: （01~53）

12A, 650V, N沟道 场效应晶体管 产品参数规格书 N-Channel MOSFET FAX: +86-755-27801767 http://www.szhhe.com Manufacturers version information 2010-07-05 ，HAOHAI ™ Product Data-S1.0 2014-06-05 ，HAOHAI ™ Product Data-S1.1 http://www.szhhe.com 第7页 共7页 kkg@kkg.com.cn http://www.kkg.com.cn HAOHAI ELECTRONICS CO., LTD. 致力於中國功率器件優秀供應商 H12N65C-PF-BDB 经中华人民共和国工商行政管理总局商标局批准 HAOHAI、HHE 图案、字母、均为我公司正式注册商标，仿冒、盗用均属侵权，违法必究！ WARN：Letters, patterns, are officially registered my trademark counterfeiting, theft are all violations, violators will be held liable ! 深圳市浩海電子有限公司 SHENZHEN HAOHAI ELECTRONICS CO., LTD. 2 floor(whole floor), BAOXIN Building. 0 Lane on the 8th. Yufeng Garden. 82 District. BAOAN District, Shenzhen City, Guangdong Province, China. 中國 廣東省 深圳市 寶安區 82区 裕豐花園 零巷8號 寶馨樓 二楼 (全层) 公司电话 TEL: +86-755-29955080、29955081、29955082、29955083 总机八线 TEL: +86-755-29955090、29955091、29955092、29955093 E-mail:kkg@kkg.com.cn