12N65 SY | Alldatasheet

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Technical content

N 1. G ate 2. Drain 3. Source Pin Definition: PRO DUCT SUMMARY V DS (V) R DS(on) Ω I D (A) @ V GS =10V ABSOLUTE MAXI MU M RATINGS C =25°C, unle ss otherwise specified) R DS(ON) Ω @ V GS =10V Fast switching capability Low gate charge Lead free in compliance with EU RoHS directive. Green molding compound Block Diagram

Ordering Information

Case: TO-220,ITO-220 ,TO-262,TO-263 Package D G S PARAMETER SYMBOL RAT I NGS UNIT Drain-Source Voltag e V DSS V Gate-Source Voltage V GSS ±30 V Continuo us Drain Current I D A Pulsed Drain Current (Note 2) I DM A Avalan che Energy Single Pulsed (Note 3) E AS mJ Power Dissipation TO-220 /TO-262/TO-263 P D 225 W ITO-220 W Junction Temperature T J +150 Operating T emperature T OPR -55 ~ +150 Storage T e mperature T STG -55 ~ +150 Notes: 1. Absol ute maximum ratings are those values be yond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. Repetitive Rating : Pulse width limited by T J L = mH, I AS 7.1 A, V DD = 50V, R G Ω, St arting T J = 25°C Part No. Package Packing DMT TU TO-220 50pcs / Tube DMF TU ITO-220 50pcs / Tube DM K TU TO-2 50pcs / Tube DM G TU TO-2 50pcs / Tube DM G T R TO-2 0pcs 13" Reel www.shunyegroup.com.cn V2.22 0V N C h a nne l Po wer MOSFET

C 25°C, unless otherwise specified) PARAMETER SYMBOL RATING UNIT Junction to Ambient TO-220/ I TO-220 TO-262/TO-263 θ JA 62.5 °C/W Junction to Case TO-220 θ JC °C/W I TO-220 2.6 PARAMET ER SYMBOL T EST CONDITIONS TYP MIN MAX UNIT OFF CH A RACTERISTICS Drain-S ource Breakdown Voltage BV DS S GS V V, I D 250 μ A V Drain-S ource Leakage Current I DS S Gate- Source Leakage Current Forward I GSS V 30V, V DS V 100 nA Reverse V GS 30V, V DS =0V -100 nA ON CH A RACTERISTICS Gate T hreshold Voltage V GS TH DS V GS I D 250 μ A 2.0 4.0 V Static Drain-S ource On-State Resistance R DS ON 0.6 Ω DYN A MIC CHARACTERISTICS Input Cap acitance C ISS V DS 25V, V GS =0V,

1.0 MHz

C OSS pF 200 Reverse T ransfer Capacitance C RS S pF SWITCHING C H ARACTERISTICS T u rn-On Delay Time t D ON ns T u rn-On Rise Time t R ns 115 T u rn-Off Delay Time t D OFF ns T u rn-Off Fall Time t F ns T o tal Gate Charge Q G nC Gate-Source C harge Q GS nC 8.6 Gate-Drain Charge Q GD nC DR A IN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-S ource Diode Forward Voltage V SD 1.4 V Maximum Co ntinuous Drain-Source Diode Forward Current I S A Maximum Puls ed Drain-Source Diode Forward Current I SM A Reverse Recover y Time t r r V GS =0V, I S dI F /dt 100 μ s (Note 570 ns Reverse Recover y Charge Q RR μ C Notes: Pulse Test: Pulse width 300 μ s, Duty cycle 2%. 2. Essentially independent of operating temperature. V DD V, I D R G =25 Ω (Note 1, 2) V DS 480 I D V GS =10V (Note V DS 0V, V GS =0V µ A S =10V, I D GS V = 0 V , I S 12A www.shunyegroup.com.cn V2.22 N 0V N C h a nne l Po wer MOSFET

as D.U.T. L V DD Dri ver V GS R G V DS D.U.T. dv/dt controlled by R G SD controlled by pulse period * D.U.T.-D vice Under Test Peak Dio de Recovery dv/dt Test Circuit Period V GS Driver) I SD .U.T.) I FM Body Diode Forward Current di/dt I RM Bod y Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop V DD V V DS (D.U.T. V GS P.W. Period Peak Dio de Recovery dv/dt Waveforms www.shunyegroup.com.cn V2.22 N 0V N C h a nne l Po wer MOSFET

T EST CIRCUITS AND WAVEFORMS(Cont.) Jan 201 -REV.0 www.sddydz.com V DS 10% V GS t ON) t R t OFF) t F S witching Test Circuit Switching Waveforms V Charge Q GS Q GD Q G V GS Gate Ch arge Test Circuit Gate Charge Waveform V DD t p Time BV DSS I AS I V DS(t Unc lamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms www.shunyegroup.com.cn V2.22 N 0V N C h a nne l Po wer MOSFET

-55°C 68 1 0 Gate-Source Voltage, V GS (V) T ransfer Characteristics No tes: 250µs Pulse Test T C 5°C Top: V GS 15V 10V 8.0V 7.0V 6.5V 6.0V Bo ttom: 5.5V D rain-Source Voltage, V GS (V) On -Resign Characteristics 0°C No tes: 1.V DS 50V 2.250µs Pulse Test www.shunyegroup.com.cn V2.22 N 0V N C h a nne l Po wer MOSFET

in Current, I D (A) Thermal Response, Z θ JC (t) www.shunyegroup.com.cn V2.22 N 0V N C h a nne l Po wer MOSFET

T O

20 Mechanical Drawing

T O O -220 M echanical Drawing www.shunyegroup.com.cn V2.22 N 0V N C h a nne l Po wer MOSFET

www.shunyegroup.com.cn V2.22 N 0V N C h a nne l Po wer MOSFET