12N65 DYELEC | Alldatasheet
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1 / 9May.2015-REV.00 1. G ate 2. Drain 3. Source Pin Definition: PRO DUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 650 0.85@ VGS =10V 12 650V N-Channel Power MOSFET ABSOLUTE MAXIMU M RATINGS (TC=25°C, unle ss otherwise specified) RDS(ON)<0.85Ω @ VGS=10V Fast switching capability Low gate charge Lead free in compliance with EU RoHS directive. Green molding compound Block Diagram
Ordering Information
- Case: TO-220,ITO-220,TO-262,TO-263 Package D G S PARAMETER SYMBOL RATI NGS UNIT Drain-Source Voltag e VDSS 650 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current ID 12 A Pulsed Drain Current (Note 2) IDM 48 A Avalanche Energy Single Pulsed (Note 3) E AS 790 mJ Power Dissipation TO-220/TO-262/TO-263 PD 225 W ITO-220 51 W Junction Temperature TJ +150 °C Operating T emperature TOPR -55 ~ +150 °C Storage Te mperature TSTG -55 ~ +150 °C Notes: 1. Absol ute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L = 30mH, IAS = 7.1A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C Part No. Package Packing DMT12N65-TU TO-220 50pcs / Tube DMF12N65-TU ITO-220 50pcs / Tube www.dyelec.com DMK12N65-TU TO-262 50pcs / Tube DMG12N65-TU TO-263 50pcs / Tube DMG12N65-TR TO-263 800pcs / 13" Reel
650V N-Channel Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATING UNIT Junction to Ambient TO-220/ITO-220 TO-262/TO-263 θJA 62.5 °C/W Junction to Case TO-220 θJC 0.56 °C/W ITO-220 2.6 PARAMETER SYMBOL T EST CONDITIONS TYP MIN MAX UNIT OFF CHA RACTERISTICS Drain-Source Breakdown Voltage BVDSS GSV =0V, ID=250 μA 650 V Drain-Source Leakage Current IDSS Gate- Source Leakage Current Forward IGSS VG=30V, VDS=0 V 100 nA Reverse VGS=-30V, VDS=0V -100 nA ON CHA RACTERISTICS Gate T hreshold Voltage VGS(TH) DSV =VGS, ID=250 μA 2.0 4.0 V Static Drain-S ource On-State Resistance R DS(ON) 0.65 0.85 Ω DYNA MIC CHARACTERISTICS Input Cap acitance CISS VDS=25V, VGS =0V, f=
1.0 MHz
ransfer Capacitance CRSS 25 pF SWITCHING CH ARACTERISTICS Tu rn-On Delay Time tD(ON) 30 ns Tu rn-On Rise Time tR ns115 Tu rn-Off Delay Time tD(OFF) 95 ns Tu rn-Off Fall Time tF 85 ns To tal Gate Charge QG 42 nC Gate-Source C harge QGS nC8.6 Gate-Drain Charge QGD 21 nC DRA IN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD 1.4 V Maximum Co ntinuous Drain-Source Diode Forward Current IS 12 A Maximum Puls ed Drain-Source Diode Forward Current ISM 48 A Reverse Recover y Time trr VGS=0V, IS=12A, dIF/dt =100 A/μs (Note 1) 570 ns Reverse Recover y Charge QRR μC5.5 Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature. May.2015-REV.00 VDD =300V, ID =12A, RG =25Ω (Note 1, 2) VDS=480V, ID=12A, VGS=10V (Note 1, 2) VDS=650V, VGS=0V 1 µA 9*S=10V, ID=6A GSV = 0 V , IS = 12A www.dyelec.com
TEST CIRCUITS AND WAVEFORMS 650V N-Channel Power MOSFET Same Type as D.U.T. L VDDDri ver VGS RG VDS D.U.T. + dv/dt controlled by RG * SD controlled by pulse period * D.U.T.-D vice Under Test Peak Dio de Recovery dv/dt Test Circuit PeriodD=VGS Driver) ISD .U.T.) IFM, Body Diode Forward Current di/dt IRM Bod y Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD V VDS (D.U.T. VGS= P.W. Period Peak Dio de Recovery dv/dt Waveforms May.2015-REV.00 12N65 www.dyelec.com
T EST CIRCUITS AND WAVEFORMS(Cont.) 650V N-Channel Power MOSFET Jan.2015-REV.00 www.sddydz.com May.2015-REV.00 12N65 VDS 10% VGS tD( ON) tR tD( OFF) tF S witching Test Circuit Switching Waveforms V Charge QGS QGD QG VGS Gate Ch arge Test Circuit Gate Charge Waveform VDD tp Time BVDSS IAS ID( t) VDS(t Unc lamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms www.dyelec.com
650V N-Channel Power MOSFET May.2015-REV.00 12N65 -55°C 101 100 10-1 68 1 0 Gate-Source Voltage, VGS (V) T ransfer Characteristics No tes: 250µs Pulse Test TC=2 5°C Top: VGS 15V 10V 8.0V 7.0V 6.5V 6.0V Bo ttom: 5.5V 101 100 10-1 100 101 D rain-Source Voltage, VGS (V) On -Resign Characteristics 0°C No tes: 1.VDS= 50V 2.250µs Pulse Test www.dyelec.com
650V N-Channel Power MOSFET 10N65 6 / 9 May.2015-REV.00 Dra in Current, ID (A) Thermal Response, ZθJC(t) www.dyelec.com
650V N-Channel Power MOSFET May.2015-REV.00 12N65 TO-2
20 Mechanical Drawing TO-2
20 Mechanical Drawing
-220 Mechanical Drawing www.dyelec.com
650V N-Channel Power MOSFET 8 / 9 May,2015-REV.00 www.dyelec.com TO-262 Mechanical Drawing TO-263 Mechanical Drawing
Specifications of the products displayed herein are subject to change without notice. DIYI or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in DIYI’s terms and conditions of sale for such products, DIYI assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of DIYI products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify DIYI for any damages resulting from such improper use or sale. 650V N-Channel Power MOSFET Apr.2015-REV.00 12N65 www.dyelec.com