12N65 SUNMATE | Alldatasheet

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Technical content

Features

T A = 25/c176C unless otherwise specified 12N65T 12N65F 12N65G 12N65K

ELECTRICAL CHARACTERISTICS

C =25°C, unless otherwise specified) PARAMETER SYMBOL RATING UNIT Junction to Ambient TO-220/ITO-220 TO-262/TO-263 θ JA 62.5 °C/W Junction to Case TO-220 θ JC 0.56 °C/W ITO-220 2.6 PARAMETER SYMBOL T EST CONDITIONS TYP MIN MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS GS V =0V, I D =250μA 650 V Drain-Source Leakage Current I DSS Gate- Source Leakage Current Forward I GSS V 30V, V DS =0V 100 nA Reverse VGS=-30V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) DS V =V GS , I D =250μA 2.0 4.0 V Static Drain-Source On-State Resistance R DS(ON) 0.65 0.85 Ω DYNAMIC CHARACTERISTICS Input Capacitance C ISS V DS =25V, V GS =0V, f=1.0 MHz 1480 pF Output Capacitance C OSS pF 200 Reverse Transfer Capacitance C RSS pF SWITCHING CHARACTERISTICS Turn-On Delay Time t D(ON) ns Turn-On Rise Time t R ns 115 Turn-Off Delay Time t D(OFF) ns Turn-Off Fall Time t F ns Total Gate Charge Q G nC Gate-Source Charge Q GS nC 8.6 Gate-Drain Charge Q GD nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage V SD 1.4 V Maximum Continuous Drain-Source Diode Forward Current I S A Maximum Pulsed Drain-Source Diode Forward Current I SM A Reverse Recovery Time t rr VGS=0V, IS=12A, dIF/dt =100 A/μs (Note 1) 570 ns Reverse Recovery Charge Q RR μC 5.5 Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature. VDD =300V, ID =12A, RG =25Ω (Note 1, 2) VDS=480V, ID=12A, VGS=10V (Note 1, 2) VDS=650V, VGS=0V 1 µA 9*S=10V, ID=6A GS V = 0 V, I S = 12A

TEST CIRCUITS AND WAVEFORMS Same Type as D.U.T. L V DD Driver V GS R G V DS D.U.T. + * dv/dt controlled by R G SD controlled by pulse period * D.U.T.-D vice Under Test Peak Diode Recovery dv/dt Test Circuit P. W. Period D=V GS (Driver) I SD (D.U.T.) I FM , Body Diode Forward Current di/dt I RM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop V DD 10V V DS (D.U.T.) V GS P.W. Period Peak Diode Recovery dv/dt Waveforms

TEST CIRCUITS AND WAVEFORMS(Cont.) V DS 90% 10% V GS t D(ON) t R t D(OFF) t F Switching Test Circuit Switching Waveforms 10V Charge Q GS Q GD Q G V GS Gate Charge Test Circuit Gate Charge Waveform V DD t p Time BV DSS I AS I D(t) V DS(t) Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

-55°C 25°C 24 6 8 1 0 Gate-Source Voltage, V GS (V) Transfer Characteristics Notes: 250µs Pulse Test T C =25°C Top: V GS 15V 10V 8.0V 7.0V 6.5V 6.0V Bottom: 5.5V Drain-Source Voltage, V GS (V) On-Resign Characteristics 150°C Notes: 1.V DS =50V 2.250µs Pulse Test

Drain Current, I D (A) Thermal Response, Zθ JC (t)

ITO-220 Mechanical Drawing