12N65 CHENDA | Alldatasheet

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W/℃ W * Drain current limited by maximum junction temperature TO-220F V A -50 ~ +150 V mJ mJ A ■ Thermal Resistance Characteristics Symbol Parameter TO-220AB Drain-Source Voltage ■Features Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge: 38nC(Typ.) Extended Safe Operating Area Lower R DS(ON) : 0.67Ω(Typ.) @ V GS =10V 100% Avalanche Tested Package: TO-220AB & TO-220F 12N65 Series Pin Assignment 12N65 Series N-Channel MOSFET ■ Absolute Maximum Ratings（T C =25℃ unless otherwise specified） Symbol Parameter Value Units TO-220AB TO-220F 650 600 I D Drain Current－Continuous (T C =25℃) 12 12* Drain Curren－Continuous (T C =100℃) 7.4 7.4* V DSS I DM Drain Current – Pulsed (Note 1) 48 48* V GS Gate-Source Voltage ±30 ±30 E AS Single Pulsed Avalanche Energy (Note 2) 860 870 I AR Avalanche Current (Note 1)1 2 1 2 E AR Repetitive Avalanche Energy (Note 1) 22.5 22.5 dv/dt Peak Diode Recovery dv/dt ( Note 3) 4.5 4.5 P D Power Dissipation (T C =25℃) 225 51 Power Dissipation - Derate above 25℃ 1.78 0.41 T J , T STG Operating and Storage Temperature Range T L Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds -- 0.56 Units Typ. Max. Typ. Max. TO-220F ℃/WR θCS Case-to-Sink 0.5 -- -- -- R θJA R θJC Junction-to-Case 62.5 -- 62.5 -- 2.43 I D =12A BV DSS =650V R DS(on) =0.67Ω Series Symbol: 1 G 2 D 3 S 3-Lead Plastic TO-220AB Package Code: P Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source 3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source QB12N65C QF12N65C Industrial model 12N65B 12N65F B: TO-220AB F: TO-220FP Poplular name Packing methodPackage identificattion TUBE Quantity per tubeQuantity per boxQuantity per carton 50/tube 1Kpcs/box 5Kpcs Page 1 Total 4

--Turn-On Rise Time I DSS Zero Gate Voltage Drain Current V DS =520V, T C =125℃ -- --V DS =650V, V GS =0V 190 μA -- 1 140 -- 100 180 Input Capacitance V DS =25V V GS =0V f=1.0MHz Gate-Source Charge -- Q g Turn-Off Fall Time V DS =520V I D =12A, V GS =10V (Note 4,5) Continuous Source-Drain Diode Forward Current t f Total Gate Charge t d(off) Turn-Off Delay Time Source-Drain Diode Maximum Ratings and Characteristics V DS =325V I D =12A R G =25Ω (Note 4,5) Q gd Gate-Drain Charge -- 0.5 t d(on) C rss Reverse Transfer Capacitance -- C oss t r --Turn-On Time nS V GS =10V, I D =6A V/℃I D =250μA, Referenced to 25℃ 0.67 0.78 2385 pF Switching Characteristics C iss -- 240 185Output Capacitance I SM --Pulsed Source-Drain Diode Forward Current Dynamic Characteristics -- 48 1835 I S Test ConditionsParameter ■ Electrical Characteristics（T C =25℃ unless otherwise specified） Typ.Min. Units Max. VV GS Gate Threshold Voltage V DS GS , I D =250μA Symbol 4.0-- △BV DSS /△T J Breakdown Voltage Temperature Coefficient R DS(ON) Static Drain-Source On-Resistance Off Characteristics BV DSS Drain-Source Breakdown Voltage Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L=11mH, I AS =12A, V DD =50V, R G =25Ω, Starting T J =25 3. I SD 12A, di/dt 200A/μS, V DD BV DSS , Starting T J =25 4. Pulse Test: Pulse Width 300μS, Duty Cycle 5. Essentially Independent of Operating Temperature I S =12A, V GS =0V di F /dt=100μA/μs (Note 4) -- nS420 Q rr 4.9 -- μC V SD Source-Drain Diode Forward Voltage Reverse Recovery Charge t rr Reverse Recovery Time I S =12A, V GS =0V -- Gate-Body Leakage Current, Forward 13 -- 280 -- 1.4 V A -- 12 V Ω 2.0 On Characteristics 650 V GS =0V, I D =250μA nA I GSSR Gate-Body Leakage Current, Reverse -- I GSSF V GS = +30V, V DS =0V V GS = -30V, V DS =1V -- -100 Page 2 Total 4

V DS , Drain-Source Voltage [V] Q G , Total Gate Charge [nC] Fig-5. Capacitance Characteristics Fig-6. Gate Charge Characteristics V GS , Gate-Source Voltage [V] Capacitances [pF] I D , Drain Current [A] V DS , Drain-Source Voltage [V] V GS , Gate-Source Voltage [V] Fig-1. On Region Characteristics Fig-2. Transfer Characteristics Fig-3. On Resistance Variation vs Fi111g-3. Drain Current and Gate Voltage I D , Drain Current [A] Fig-4. Body Diode Forward Voltage Variation Fig-4. with Source Current and Temperature R DS(ON) [Ω], Drain-Source On-Resistance I DR , Reverse Drain Current [A] I D , Drain Current [A] V SD , Source-Drain Voltage [V] Typical Performance Characteristics Page 3 Total 4

I D , Drain Current [A] I D , Drain Current [A] Fig-9. Maximum Safe Operating Area Fig-10. Maximum Drain Current vs Case Temperature V DS , Drain-Source Voltage [V] T C , Case Temperature [℃] t ,Square Wave Pulse Duration [sec] Fig-11. Transient Thermal Response Curve Z θJC (t), Thermal Response T J , Junction Temperature [℃]T J , Junction Temperature [℃] R DS(ON) , (Normalized) Drain-Source On-Resistance Typical Performance Characteristics (Continued) Fig-7. Breakdown Voltage Variation vs Temperature Fig-8. On-Resistance Variation vs Temperature BV DSS , (Normalized) Drain-Source Breakdown Voltage Page 4 Total 4