12N60 ZSELEC | Alldatasheet
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Technical content
1.Gate 3.Source 2.Drain
ORDERING INFORMATION
Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 12N60 12N65 12N65
12 Amps, 600/650 Volts
DESCRIPTION is a high voltage an d high c urrent power MOSFET, designe d to have better characteristics, such as fast switching time, low gate charg e, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed sw itching applications in power supplies, PWM motor controls, high efficient DC to DC convert ers and bridge circuits. FEATURES * 12A, 600V, RDS(ON) =0.73Ω@VGS =10V * Low gate charge ( typical 44 nC) * Low Crss ( typical 18 pF) * Fast sw itching * 100% aval anche tested * Improved dv/d t capability 12N60 SYMBOL TO-263/D PAK TO-262/I PAK 12N60 Pin Assignment Ordering Number Package 1 2 3 TO-220 G D S ITO-220/TO-220F G D S G D S G D S 12N65 TO-220 1 1 TO-262/I PAK2 TO-263/D PAK2 ITO-220/TO-220F Pa rt No. Package Packing -TU TO-220 50pcs / Tube TO-262 50 pcs / Tube TO-263 50pcs / Tube TO-263 800pcs / 13" Reel ITO-220/TO-220F 50pcs / Tube 12N6* TU 12N6* -TU 12N6* -TU 12N6* -TR 12N6* Note: Pin Assignment: G: Gate D: Drain S: Source Alldatasheet
Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 12N60 12N65 51 W ABSOLUTE MAXIMU M RATINGS (TC = 25°С, unless otherw ise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltag e VDSS 650 V Gate-Source Vo ltage VGSS ±30 V Avalanche C urrent (Note 2) IAR 10 A Continuo us I D 12 A Drain Cu rrent Pulsed (Note 2) IDM 48.0 A Single Puls ed (Note 3) E AS 790 mJ Aval anche Energy Repetitive (Not e 2) EAR 15.6 mJ Peak Diode R ecovery dv/dt (Note 4) dv/dt 4.5 V/ns TO -220 225 W Power Dissipation PD (TC = 25°С) Junction Temperature TJ + 150 °С Ambient Operating Temperature TOPR -55 ~ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute ma ximum ratings are those values beyond w hich the device could be permanently damaged. Absolute maxi mum ratings are stress ratings only and functional devic e operation is not implie 2. Repetitive Rating : Pulse width limited by TJ 3. L=7.3mH, IAS=10A, V DD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD≤9.5A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THER MAL DATA 12N60 12N65 600 V TO -220F /TO-263/TO-262 0.85 PARAMETER SYMBOL RATINGS UNIT TO-220 62.5 ITO-220/TO-220F 62.5 Junction-to-Ambient θJA ℃/W TO-220 0.85 2.60 Junction-to-Case θJc ℃/W 0.85 TO-262/I PAK2 TO-263/D PAK2 TO-262/I PAK2 TO-263/D PAK2 62.5 62.5 ITO-220/TO-220F Alldatasheet
Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com ELECTRICAL CH ARACTERISTICS (TJ =25°С, unless otherwis e specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHA RACTERISTICS 10N60 V Drain-Source Breakd own Voltage 10N65 BVDSS V GS = 0V , ID = 250μA 650 V Drain-Source L eakage Current IDSS V DS = 600V, VGS = 0V 1 μA Forw ard V GS = 30V, VDS = 0V 100 nAGate-Source Leaka ge Current Reverse IGSS VGS = -30V, VDS = 0V -100 nA Breakdo wn Voltage Temperature Coefficient △BVDSS/T△ J ID = 250 μA, Referenced to 25°C 0.7 V/°С ON CHA RACTERISTICS Gate Th reshold Voltage VGS(T H) V DS = VGS, ID = 250μA 2.0 4.0 V Static Drain-So urce On-State Resistance R DS(ON) V GS = 10V, ID =6A 0.6 0.8 Ω DYNA MIC CHARACTERISTICS Input Capacitance CISS 1480 pF Output Capacitance COSS 200 Reverse Tr ansfer Capacitance CRSS VDS =25V, VGS =0V,f =1 MHz pF SWITCHING CHARACTERIST ICS Tu rn-On Delay Time tD (ON) 30 55 ns Turn-On Rise Time tR 115 150 ns Tu rn-Off Delay Time tD(OFF) 95 300 ns Tu rn-Off Fall Time tF VDD =300V, ID =10 RG=25Ω (Note 1, 2) 85 165 ns To tal Gate Charge QG 42 57 nC Gate-Source Charg e QGS 8.6 nC Gate-Drain Charge QGD VDS=480V, VGS=10V, ID=10 A (Note 1, 2) 21 nC DRA IN-SOURCE DIODE CHARACTERISTICS Drain-Source Diode Forw ard Voltage VSD V GS = 0 V, ISD = 10 A 1.4 V Continuo us Drain-Source Current ISD 12 A Pulsed Drain-Source Current ISM 48 A Reverse Recovery Time tRR 570 ns Reverse Recovery Charge QRR VGS = 0 V , ISD = 10A, di/dt = 100 A/μs (Note1) 5.5 μC Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2% 2. Essentially independe nt of operating temperature 600 12N60 12N65 pF Alldatasheet
TEST CIRCUITS AND WAVEFORM S Same Type as D.U.T. L VDDDriver VGS RG VDS D.U.T. + * dv/dt controlled by RG * ISD controlle d by pulse period * D.U.T.-De vice Under Test P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forwar d Current di/dt IRM Body Diode Reve rse Current Body Diod e Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period Fig. 1 A Peak Diode Recovery dv/dt Test Circuit F ig . 1 B P e a k D i o d e R e c o v e r y d v / d t W a v e f o r m s 12N60 12N65 4 of 7 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 12N60 12N65 Alldatasheet
TEST CIRCUITS AND WAVEFORM S (Cont.) Fig. 2A Switching Test Circuit Fi g. 2B Switching Waveforms Fig . 3 A G a t e C h a r g e T e s t C i r c u i t F i g . 3 B G a t e C h a r g e W a v e f o r m D.U.T. RD 10V VDS L VDD tp VDD tp Time BVDSS IAS ID(t) VDS(t Fig. 4 A Unclamped Inductive Switching Test Circuit Fi g. 4B Unclamped Inductive Switching Waveforms 12N60 12N65 5 of 7 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 12N60 12N65 Alldatasheet
Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 12N60 12N65 TYPICAL CH ARACTERISTICS Drain- Source On-Resistance, RDS(ON) (Ω) Reverse Drai n Current, IDR (A) Gate-Source Voltag e, VCG (V) Capacitance, (pF) Alldatasheet
Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 12N60 12N65 Drain-So urce Breakdown Voltage, BVDSS (Norma lized) Drain-Source On-Resistance, RDS(ON (Normalized) 10-1 100 101 102 100 101 102 103 Drain-Source Voltage, VDS (V) Drain Curre nt, ID (A) Maximum Safe Op erating Area 10μs 100μs 1ms 10ms 100ms DC Notes: 1.TC=25℃ 2.TJ=150℃ 3.Single Pulse Operation in this Area is United by RDM 0 5025 75 100 12 5 150 Case Te mperature, TC (℃) Maximum Drain Current vs. Case Temperature Drai n Current, ID (A) PDW Single pulse D=0.5 0.2 0.1 0.05 0.02 0.01 NOTES: 1.ZθJC(t)= 2.5D/W Max 2.Duty Fa ctor,D=t1/t2 3.TJW-TC=PDW-ZθJC(t) Square Wave Pul se Duration, t1 (sec) 10-5 10-4 10-3 10-2 10-1 100 101 10-2 10-1 100 Tran sient Thermal Response Curve Alldatasheet