GBJ35005 ZSELEC | Alldatasheet
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Features
/c183Glass Passivated Die Construction /c183High Case Dielectric Strength of 1500VRMS /c183Low Reverse Leakage Current /c183Surge Overload Rating to 350A Peak /c183Ideal for Printed Circuit Board Applications /c183Plastic Material - UL Flammability Classification 94V-0 Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol GBJ 35005 GBJ 3501 GBJ 3502 GBJ 3504 GBJ 3506 GBJ 3508 GBJ
3510 Unit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM VRWM VR 100 200 400 600 800 1000 V RMS Reverse Voltage VR(RMS) 35 70 140 280 420 560 700 V Average Forward Rectified Output Current @ TC = 100°C IO 35 A Non-Repetitive Peak Forward Surge Current, 8.3 ms single half-sine-wave superimposed on rated load (JEDEC method) IFSM 350 A Forward Voltage (per element) @ IF = 17.5A DC VFM 1.05 V Peak Reverse Current @ TC = 25°C at Rated DC Blocking Voltage @ TC = 125°C IR 2.0 500 µA I2t Rating for Fusing (t < 8.3ms) (Note 1) I2t 240 A2s Typical Junction Capacitance per Element (Note 2) Cj 60 pF Typical Thermal Resistance, Junction to Case (Note 3) R/c113JC 0.8 °C/W Operating and Storage Temperature Range Tj,T STG -55 to +150 °C GBJ35005 - GBJ3510 35A GLASS PASSIVATED BRIDGE RECTIFIER /c183Case: Molded Plastic /c183Terminals: Plated Leads, Solderable per MIL-STD-202, Method 208 /c183Polarity: Molded on Body /c183Mounting: Through Hole for #6 Screw /c183Mounting Torque: 5.0 in-lbs Maximum /c183Weight: 6.6 grams (approx) /c183Marking: Type Number Mechanical Data Notes: 1. Non-repetitive, for t > 1ms and < 8.3 ms. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC. 3. Thermal resistance from junction to case per element. Unit mounted on 300 x 300 x 1.6mm copper plate heat sink. Single phase, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com GBJ35005 - GBJ3510 1 of 2 /c183Lead Free Finish/ RoHS Complian L A B D JK C E G H L M N P R GBJ4 Dim Min Max A 24.80 25.20 B 14.70 15.30 C 4.00 Nominal D 17.20 17.80 E 0.90 1.10 G 7.30 7.70 H 3.10 /c1983.40 /c198 J 3.30 3.70 K 1.50 1.90 L 9.30 9.70 M 2.50 2.90 N 3.40 3.80 P 4.40 4.80 R 0.60 0.80 All Dimensions in mm
0.01 0.1 1.0 100 I , INST ANTANEOUS FORWARD CURRENT (A) F V , INSTANTANEOUS FORWARD VOLTAGE (V) Fig.2 T ypical Forward Characteristics F Pulse width: 300µs T = 25°Cj 1.0 100 1.0 10 100 C , JUNCTION CAPACITANCE (pF)j V , REVERSE VOLTAGE (V) Fig.4 T ypical Junction Capacitance R f=1M H z T = 25°Cj 0.1 1.0 100 1000 20 40 60 80 100 120 I , INST ANTANEOUS REVERSE CURRENT (µA) R PERCENT OF PEAK REVERSE VOLTAGE (%) Fig.5 T ypical Reverse Characteristics T = 100°Cj T = 50°Cj T = 25°Cj T = 125°Cj www.senocn.com GBJ35005 - GBJ3510 2 of 2 Z ibo Seno Electronic Engineering Co., Ltd. GBJ35005 - GBJ3510 1 10 100 I PEAK FORWARD SURGE CURRENT (A) FSM NUMBER OF CYCLES AT 60 Hz Fig. 3 Maximum Non-Repetitive Surge Current T = 25°Cj Single half-sine-wave (JEDEC method) 100 200 300 400 0 25 50 75 100 125 150 I , A VERAGE FORWARD CURRENT (A)F T,CASE TEMPERATURE(°C) Fig.1Forward.CurrentDeratingCurve C Resistive or Inductive load Mounted on a 229 x152 x127 mm ALfinned plate30