12N65 VBSEMI | Alldatasheet

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Technical content

N-Channel 650V (D-S) Power MOSFET

FEATURES

  • Low figure-of-merit (FOM) Ron x Qg
  • Low input capacitance (Ciss)
  • Reduced swi tching and conduction losses
  • Ultra low gate charge (Qg)
  • Avalanche energy rated (UIS)

APPLICATIONS

  • Server and telecom power supplies
  • Switch mode p ower supplies (SMPS)
  • Power factor correction power supplies (PFC)
  • Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting
  • Industrial Notes a. Repetitive rating; puls e width limited by maximum junction temp erature. b. V DD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 4.5 A. c. 1.6 mm from case. d. I SD ≤ ID, dI/dt = 100 A/μs, starting TJ = 25 °C. PRODUCT SUMMARY VDS (V) at TJ max. 650 RDS(on) max. at 25 °C (Ω)V GS = 10 V 0. Qg max. (nC) 43 Qgs (nC) 5 Qgd (nC) 22 Configuration Single N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless ot herwise noted) PARAMETER SYMBOL LIMIT UNIT Dr ain-Source Voltage VDS 650 V Gate-Source Voltage VGS ± 30 Continuous Drain Current (TJ = 150 °C) VGS at 10 V TC = 25 °C ID ATC = 100 °C 9.4 Pulsed Drain Current a IDM 45 Linear Derating Factor 3.6 W/°C Single Pulse Aval anche Energy b EAS mJ Maximum Power Diss ipation PD /34 W Operating Junction and Storag e Temperature Range TJ, Tstg -55 to +150 °C Drain-Source Vol tage Slope TJ = 125 °C dV/dt V/nsReverse Diode dV/dt d 4.1 Soldering Recom mendations (Peak Temperature) c for 10 s 300 °C T O-220AB Top View GD S G D S TO-220 FULLPAK Top View D2PAK (TO-263) G D S 106 290 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 12N65 A ll data sheet.com

a. C oss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS. b. C oss(tr) is a fixed capacit ance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -6 0 °C/WMaximum Junction-to-Case (D rain) RthJC -0 .8 SPECIFICATIONS (TJ = 25 °C, unless otherwise note PARAMETER SYMBOL TEST CONDITI ONS MIN. TYP. MAX. UNIT Static Drain-So urce Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 650 - - V VDS Temperature Coeffic ient ΔVDS/TJ Reference to 25 °C, ID = 1 mA -0 .75 - V/°C Gate-Source Thr eshold Voltage (N) VGS(th) VDS = VGS, ID = 250 μA 2 - 4 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA VGS = ± 30 V - - ± 1 μA Zero Gate Vo ltage Drain Current IDSS VDS = 650 V, VGS = 0 V - - 1 μA VDS = 520 V, VGS = 0 V, TJ = 125 °C - - 10 Drain-Source On-State Resi stance RDS(on) VGS = 10 V ID = 8 A - 0. Ω Forward Transconduct ance gfs VDS = 30 V, ID = 8 A - 16 - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 100 V, f = 1 MHz - 2200 - pF Output Capacitance Coss - - Reverse Tr ansfer Capacitance Crss - - Effective Output Capaci tance, Energy Related a Co(er) VDS = 0 V to 520 V, VGS = 0 V -6 3- Effective Output Capac itance, Time Related b Co(tr) - 213 - Total Gate Charge Qg VGS = 10 V ID = 8 A, VDS = 520 V -4 3 - nC Gate-Source Charge Qgs - Gate-Drain Charge Qgd -2 2 Turn-On Delay Time td(on) VDD = 520 V, ID = 8 A, VGS = 10 V, Rg = 9.1 Ω -1 3 nsRise Time tr -1 1 Turn-Off Delay T ime td(off) -8 1 Fall Time tf -2 5 Gate Input Resistance Rg f = 1 MHz, open drain - 3.5 - Ω Drain-Source Body Dio de Characteristics Continuous Source-Drain Diode Current I S MOSFET symbol showing the integral reverse p - n junction diode -- 1 5 A Pulsed Diode Forward Current ISM -- 4 0 Diode Forward V oltage VSD TJ = 25 °C, IS = 8 A, VGS = 0 V - - 1.5 V Reverse Reco very Time trr TJ = 25 °C, IF = IS = 8 A, dI/dt = 100 A/μs, VR = 400 V - 345 - ns Reve rse Recovery Charge Qrr -4 . 5- μ C Revers e Recovery Current IRRM -3 5-A S D G -58 420 210 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 12N65 A ll data sheet.com

ERISTICS (25 °C, unless otherwise noted) Fig. 1 - Typic al Output Characteristics Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage VDS, Drain-to-Source Voltage (V) ID, Drain-to-Source Current (A) 0 5 10 15 20 25 30 TOP 15 V 14 V 13 V 12 V 11 V 10 V 9 V 8 V 7 V 6 V BOTTOM 5 V TJ = 25 °C VDS, Drain-to-Source Voltage (V) ID, Drain-to-Source Current (A) 0 5 10 15 20 25 30 TJ = 150 °C 5 V TOP 15 V 14 V 13 V 12 V 11 V 10 V 9 V 8 V 7 V BOTTOM 6 V VGS, Gate-to-Source Voltage (V) ID, Drain-to-Source Current (A) 0 5 10 15 20 25 TJ = 25 °C TJ = 150 °C VDS = 30.8 V TJ, Junction Temperature (°C) RDS(on), Drain-to-Source - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 On Resistance (Normalized) 0.5 1.5 2.5 VGS = 10 V ID = 8 A VDS, Drain-to-Source Voltage (V) Capacitance (pF) 1400 700 0 200 400 2800 2100 100 300 500 600 Ciss Coss Crss VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd ġ ġ Qg, Total Gate Charge (nC) VGS, Gate-to-Source Voltage (V) 0 20 40 60 80 VDS = 520 V VDS = 325 V VDS = 130 V 100 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 12N65 A ll data sheet.com

Fig. 7 - Typical Source -Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10 - Temperature vs. Drain-to-Source Voltage Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case VSD, Source-Drain Voltage (V) ISD, Reverse Drain Current (A) 0.1 100 TJ = 150 °C TJ = 25 °C VGS = 0 V ID, Drain Current (A) 100 1000 0.01 0.1 1 10 100 1000 VDS - Drain -to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) i s specified Limited by RDS(on)* 1 ms 10 ms 100 μs Operation in this Area Limited by RDS(on) TC = 25 °C TJ = 150 °C Single Pulse BVDSS Limited IDM = Limited TJ, Case Temperature (°C) ID, Drain Current (A) 25 50 75 100 125 150 TJ, Junction Temperature (°C) VDS, Drain-to-Source - 60 0 160 Breakdown Voltage (V) - 40 - 20 20 40 60 80 100 120 140 600 625 650 675 700 725 750 775 800 0.01 0.1 0.0001 0.001 0.01 0.1 1 Normalized Effective Transient Thermal Impedance Pulse Time (s) Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 12N65 A ll data sheet.com

Fig. 12 - Switchin g Time Test Circuit Fig. 13 - Switching Time Waveforms Fig. 14 - Unclamped Inductive Test Circuit Fig. 15 - Unclamped Inductive Waveforms Fig. 16 - Basic Gate Charge Waveform Fig. 17 - Gate Charge Test Circuit Pulse width ≤ 1 µs Duty factor ≤ 0.1 % RD VGS RG D.U.T. 10 V VDS VDD VDS 90 % 10 % VGS td(on) tr td(off) tf RG IAS 0.01 Ωtp D.U.T L VDS - VDD 10 V Vary tp to obtain required IAS IAS VDS VDD VDS tp QGS QGD QG VG Charge 10 V D.U.T. 3 mA VGS VDS IG ID 0.3 µF 0.2 µF 50 kΩ 12 V Current regulator Current sampling resistors Same type as D.U.T. www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 12N65 A ll data sheet.com

Fig. 18 - For N-Channel P.W. Period dI/dt Diode recovery dV/dt Ripple ≤ 5 % Body diode forward drop Re-applied voltage Reverse recovery current Body diode forward current VGS = 10 Va ISD Driver gate drive D.U.T. lSD waveform D.U.T. VDS waveform Inductor current D = P.W. Period Peak Diode Recovery dV/dt Test Circuit VDD  dV/dt controlled by Rg  Driver same type as D.U.T.  ISD controlled by duty factor “D”  D.U.T. - device under test D.U.T. Circuit layout considerations  Low stray inductance  Ground plane  Low leakage inductance current transformer Rg Note a. VGS = 5 V for logic level devices VDD www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 12N65 A ll data sheet.com

  • M = 1.32 mm to 1.62 mm (dim ension inc luding protrusion) Heatsink hole for HVM 321 L L(1) D H(1) Q Ø P A F J(1) b(1) e(1) e E b C MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 J(1) 2.41 2.92 0.095 0.115 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 Ø P 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: X12-0208-Rev. N, 08-Oct-12 DWG: 5471 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 12N65 A ll data sheet.com

TO-220 FULLPAK (HIGH VOLTAGE) Notes 1. To be used only for process drawing. 2. These dimens ions apply to all TO-220, FULLPAK leadframe versions 3 leads. 3. All critical dimensions should C meet C pk > 1.33. 4. All dimensions include bur rs and plating thickness. 5. No chipping or package da mage. E b n L e Ø P D c u V A MILLIMETERS INCHES A 4.570 4.830 0.180 0.190 A1 2.57 0 2.830 0.101 0.111 A2 2.510 2.850 0.099 0.112 b 0.622 0.890 0.024 0.035 b2 1.229 1.400 0.048 0.055 b3 1.229 1.400 0.048 0.055 c 0.440 0.629 0.017 0.025 D 8.650 9.800 0.341 0.386 d1 15.88 16.120 0.622 0.635 d3 12.300 12.920 0.484 0.509 E 10.360 10.630 0.408 0.419 e 2.54 BSC 0.100 BSC L 13.200 13.730 0.520 0.541 L1 3.100 3.500 0.122 0.138 n 6.050 6.150 0.238 0.242 Ø P 3.050 3.450 0.120 0.136 u 2.400 2.500 0.094 0.098 v 0.400 0.500 0.016 0.020 ECN: X09-0126-Rev. B, 26-Oct-09 DWG: 5972 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 12N65 A ll data sheet.com

TO-263AB (HIGH VOLTAGE) Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimensions are shown in millimeters (inches) outmost extremes of the plastic body at datum A. 4. Thermal PAD contour optional within dimension E, L1, D1 and E1. 5. Dimension b1 and c1 apply to base metal only. 6. Datum A and B to be determined at datum plane H. 7. Outline conforms to JEDEC outline to TO-263AB. 1 3 D B B E H BA Detail A A A c A 2 x e 2 x b2 2 x b

0.010 A BMM

± 0.004 BM Base metal Plating b1, b3 (b, b2) c1(c) Section B - B and C - C Scale: none Lead tip (Datum A)

2 C C

E B H Seating plane Gauge plane 0° to 8° Detail “A” Rotated 90° CW scale 8:1 L3 A1L4L MILLIMETERS INCHES MILLIMETERS INCHES DIM. MIN . ECN: S-82110-Rev. A, 15-Sep-08 DWG: 5970 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 12N65 A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 12N65 A ll data sheet.com