SSG4953 VBSEMI | Alldatasheet

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Technical content

Dual P-Channel 30-V (D-S) MOSFET

FEATURES

  • Halogen-free T r e n c h F E T® Power MOSFET  100 % UIS Tested

APPLICATIONS

 Load Switches PRODUCT SUMMARY VDS (V) R DS(on) (Ω) ID (A)d, e Qg (Typ.) - 30 0.029 at VGS = - 10 V - 7.3 17 nC 0.039 at VGS = - 4.5 V - 6.3 Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 85 ° C /W. d. Based on T C = 25 °C. e. Limited by package. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS - 30 VGate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 7.3e A TC = 70 °C - 7.0e TA = 25 °C - 7.3a, b TA = 70 °C - 5.9a, b Pulsed Drain Current IDM - 32e Continuous Source-Drain Diode Current TC = 25 °C IS - 4.1 TA = 25 °C - 2.0a, b Avalanche Current L = 0.1 mH IAS - 20 Single-Pulse Avalanche Energy EAS 20 mJ Maximum Power Dissipation TC = 25 °C PD 5.0 WTC = 70 °C 3.2 TA = 25 °C 2.5a, b TA = 70 °C 1.6a, b Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, c t ≤ 10 s RthJA 38 50 °C/WMaximum Junction-to-Foot Steady State RthJF 20 25 P-Channel MOSFET P-Channel MOSFET S1 D1 G1 D1 S2 D2 G2 D2 SO-8 Top View RoHS COMPLIANT SSG4953 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause perma nent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 30 V VDS Temperature Coefficient ΔVDS/TJ ID = - 250 µA - 31 mV/°CVGS(th) Temperature Coefficient ΔVGS(th)/TJ 4.5 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1.0 - 3.0 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 30 V, VGS = 0 V - 1 µAVDS = - 30 V, VGS = 0 V, TJ = 55 °C - 5 On-State Drain Currenta ID(on) VDS ≥ - 10 V, VGS = - 10 V - 30 A Drain-Source On-State Resistancea RDS(on) Forward Transconductancea gfs VDS = - 10 V, ID = - 6.1 A 23 S Dynamicb Input Capacitance Ciss VDS = - 15 V, VGS = 0 V, f = 1 MHz 1350 pFOutput Capacitance Coss 215 Reverse Transfer Capacitance Crss 185 Total Gate Charge Qg VDS = - 15 V, VGS = - 10 V, ID = - 6.1 A 32 50 nCVDS = - 15 V, VGS = - 4.5 V, ID = - 6.1 A 15 25 Gate-Source Charge Qgs 4 Gate-Drain Charge Qgd 7.5 Gate Resistance Rg f = 1 MHz 5.8 Ω Tur n-On Delay Tim e td(on) VDD = - 15 V, RL = 15 Ω ID ≅ - 1 A, VGEN = - 10 V, Rg = 1 Ω 10 15 ns Rise Time tr 81 5 Turn-Off DelayTime td(off) 45 70 Fall Time tf 12 25 Tur n-On Delay Tim e td(on) VDD = - 15 V, RL = 15 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 1 Ω 42 70 Rise Time tr 35 60 Turn-Off DelayTime td(off) 40 70 Fall Time tf 16 30 Drain-Source Body Diode Characteristics Continou s Source-Drain Diode Current I S TC = 25 °C - 4.1 APulse Diode Forward Current ISM - 32 Body Diode Voltage VSD IS = - 2 A, VGS = 0 V - 0.75 - 1.2 V Body Diode Reverse Recovery Ti me trr IF = - 2 A, dI/dt = 100 A/µs, TJ = 25 °C 34 60 ns Body Diode Reverse Recovery Charge Q rr 22 40 nC Reverse Recovery Fall Time ta 11 nsReverse Recovery Rise Time tb 23 SSG4953 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

TYPICAL CHARACTERISTICS 25 C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge VGS =1 0t h ru 5 V VGS =3V VGS =4V VDS - Drain-to-Source Voltage (V) - Drain Current (A)I D 0.01 0.03 0.05 0.07 0.09 01 0 2 0 3 0 4 0 VGS =4 .5 V VGS =1 0 V - On-Resistance (Ω)RDS(on) ID - Drain Current (A) 09 18 27 36 VDS =2 2 . 5V ID =-6.1 A VDS =1 5V VDS =7 . 5V - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS Transfer Characteristics Capacitance On-Resistance vs. Junction Temp erature 0.0 0.2 0.4 0.6 0.8 1.0 TC = 25 °C TC = 125 °C TC =- 5 5 ° C VGS - Gate-to-Source Voltage (V) - Drain Current (A)I D 600 1200 1800 2400 0 6 12 18 24 30 Ciss Coss Crss VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) 0.6 0.9 1.2 1.5 1.8 - 50 - 25 0 25 50 75 100 125 150 VGS =1 0V VGS =4 . 5V ID =-6.3 A TJ -J unction Temperature (°C) (Normalized) - On-ResistanceRDS(on) SSG4953 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.01 0.001 0.1 100 TJ = 150 °C TJ = - 50 °C TJ = 25 °C VSD -S ource-to-Drain Voltage (V) - Source Current (A)I S - 0.2 0.0 0.2 0.4 0.6 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA ID =1m A Variance (V)VGS(th) TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambien t 0.00 0.02 0.04 0.06 0.08 0.10 0246 8 10 TJ = 25 °C TJ = 125 °C ID =-6.3 A - On-Resistance (Ω)RDS(on) VGS - Gate-to-Source Voltage (V) 100 0 111 0 0 .00 .01 Time (s) Power ( W) 0.1 Safe Operating Area 100 0.1 1 10 100 0.01 0.1 TA = 25 °C Single Pulse 10 s Limited byR DS(on)* BVDSS Limited 1m s 100 µs 10 ms 1s ,D C 100 ms VDS - Drain-to-Source Voltage (V) * VGS > minimu m VGS at which RDS(on) is specified - Drain Current (A)ID SSG4953 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted * The power dissipation P D is based on T J(max) = 150 °C, using junction-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cases where addition al heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 2 55 07 5 1 0 0 1 2 5 1 5 0 Package Limited TC - Case Temperature (°C) I D - Drain Current (A) Power, Junction-to-Foot 0.0 1.2 2.4 3.6 4.8 6.0 02 5 5 0 7 5 1 0 0 1 2 5 1 5 0 T C - Case Temperature (°C) Power (W) Power Derating, Junction -to-Ambient 0.0 0.4 0.8 1.2 1.6 2.0 0 25 50 75 100 125 150 T A -A mbient Temperature (°C) Power (W) SSG4953 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 0 0 0 110110-110-4 100 0.2 0.1 0.05 0.02 Square WaveP ulse Duration (s) Normalized Effective Transient T hermal Impedance 0.1 0.01 Single Pulse Notes: PDM 1. Duty Cycle, D = 2. Per Unit B ase = RthJA = 85 °C/W 3. TJM - TA =P DMZthJA(t) 4. Surface Mounted Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Foot 10-3 10-2 0 1110-110-4 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square WaveP ulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 SSG4953 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.15 0 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0 °8 °0 °8 ° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 431 2 568 7 HE h x 45 C All Leads q 0.101 mm 0.004"LBA 1 A e D 0.25 mm (Gage Plane) SOIC (NARROW): 8-LEAD JEDEC Part N umber: MS-012 S SSG4953 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

RECOMMENDED MINIMUM PADS FOR SO-8 0.246 (6.248) Recommended Minimum Pads Dimensions in Inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) SSG4953 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. SSG4953 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com