MMFTP84

MMFTP84 VBSEMI | Alldatasheet

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Technical content

P-Channel 60 V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition  TrenchFET ® Power MOSFET  High-Side Switching  Low On-Resistance: 3   Low Threshold: - 2 V (typ.)  Fast Swtiching Speed: 20 ns (typ.)  Low Input Capacitance: 20 pF (typ.)  Compliant to RoHS Directive 2002/95/EC Notes: a. Surface mounted on FR4 board. b. Pulse width limited by maximum junction temperature. PRODUCT SUMMARY VDS (V) R DS(on) ()V GS(th) (V) I D (mA) - 60 3 at VGS = - 10 V - 1 to - 3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless oth erwise noted Parameter Symbol Limit Unit Dr ain-Source Voltage VDS - 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Currenta TA = 25 °C ID - 500 mATA = 100 °C - 350 Pulsed Drain Currentb IDM -1500 Power Dissipationa TA = 25 °C PD 460 mWTA = 100 °C 240 Maximum Junction-to-Ambienta RthJA 350 °C/W Operating Junction and Storage Tempera ture Range TJ, Tstg - 55 to 150 °C G TO-236 (SOT-23) S D S G D P-Channel MOSFET -500 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw MMFTP84 A ll data sheet.com

Notes: a. Pulse test: PW  300 µs duty cycle  2 %. b. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Abs olute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TA = 25 °C, unless otherwise noted Parameter Symbol Test Conditio ns Limits Unit Min. Typ. a Max. Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 10 µA - 60 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1 - 3 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 10 µA VDS = 0 V, VGS = ± 10 V ± 200 nA VDS = 0 V, VGS = ± 10 V, TJ = 85 °C ± 500 VDS = 0 V, VGS = ± 5 V ± 100 Zero Gate Voltage Drain Current IDSS VDS = - 60 V, VGS = 0 V - 25 VDS = - 60 V, VGS = 0 V, TJ = 85 °C - 250 On-State Drain Currenta ID(on) VGS = - 10 V, VDS = - 4.5 V - 50 mA VGS = - 10 V, VDS = - 10 V - 600 Drain-Source On-Resistancea RDS(on) VGS = - 4.5 V, ID = - 25 mA 4 VGS = - 10 V, ID = - 100 mA 3 VGS = - 10 V, ID = - 100 mA, TJ =125 °C 9 Forward Transconductancea gfs VDS = - 10 V, ID = - 100 mA 80 mS Diode Forward Voltage VSD IS = - 100 mA, VGS = 0 V - 1.4 V Dynamic Total Gate Charge Qg VDS = - 30 V, VGS = - 15 V ID  - 100 mA 2.0 nCGate-Source Charge Qgs 1.2 Gate-Drain Charge Qgd 0.8 Input Capacitance Ciss VDS = - 25 V, VGS = 0 V f = 1 MHz pFOutput Capacitance Coss 10 Reverse Transfer Capacitance Crss 5 Switchingb Tur n-On Tim e td(on) VDD = - 25 V, RL = 150  ID  - 200 mA, VGEN = - 10 V, Rg = 10  ns Turn-Off Time td(off) 35 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw MMFTP84 A ll data sheet.com

TYPICAL CHARACTERISTICS 25 ° C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charg e 0.0 0.2 0.4 0.6 0.8 1.0 012345 VDS - Drain-to-Source Voltage (V) - Drain Current (A)ID VGS = 10 V 3 V 2 V 4 V 5 V V 0 200 400 600 800 1000 ID - Drain Current (mA) VGS = 4.5 V VGS = 10 V - On-Resistance (Ω)RDS(on) VGS = 5 V ID = 500 mA - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS VDS = 30 V VDS = 48 V Transfer Characteristics Capacitance On-Resistance vs. Junction T emperature 300 600 900 1200 02468 10 VGS - Gate-to-Source Voltage (V) - Drain Current (mA)ID TJ = - 55 °C 125 °C 25 °C 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) Crss Coss Ciss VGS = 0 V 0.0 0.3 0.6 0.9 1.2 1.5 1.8 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) VGS = 10 V at 500 mA VGS = 4.5 V at 25 mA RDS(on) - On-Resistance (Normalized) E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw MMFTP84 A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, un less otherwise noted Source-Drain Diode Forward Volt age Threshold Voltage Variance Over Temperature 1.2 1.5 100 1000 0.00 0.3 0.6 0.9 TJ = 25 °C TJ = 125 °C VSD - Source-to-Drain Voltage (V) - Source Current (A)I S TJ = - 55 °C VGS = 0 V - 0.3 - 0.2 - 0.1 - 0.0 0.1 0.2 0.3 0.4 0.5 - 50 - 25 0 25 50 75 100 125 150 VGS(th) Variance (V) ID = 250 µA TJ - Junction Temperature (°C) On-Resistance vs. Gate-Source Voltage Sing le Pulse Power, Junction-to-Ambient 02468 10 VGS - Gate-to-Source Voltage (V) ID = 500 mA ID = 200 mA RDS(on) - On-Resistance (Ω) 0.01 2.5 100 6000.1 Power (W) Time (s) 1.5 0.5 TA = 25 °C Normalized Thermal Transient Imped ance, Junction-to-Ambient 10-3 10-2 0 0 60 1110-110-4 100 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 350 °C/W 3. TJM - TA = PDMZthJA(t) Notes: 4. Surface Mounted PDM E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw MMFTP84 A ll data sheet.com

SOT-23 (TO-236): 3-LEAD b EE1 S e D A2A A1 C Seating Plane 0.10 mm 0.004" C C L q Gauge Plane Seating Plane 0.25 mm Dim MILLIMETERS INCHES Min Max Min Max A 0.89 1.12 0.035 0.044 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 0.055 e 0.95 BSC 0.0374 Ref e1 1.90 BSC 0.0748 Ref L 0.40 0.60 0.016 0.024 L1 0.64 Ref 0.025 Ref S 0.50 Ref 0.020 Ref q 3°8 ° 3°8 ° ECN: S-03946-Re v. K, 09-Jul-01 DWG: 5479 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw MMFTP84 A ll data sheet.com

RECOMMENDED MINIMUM PADS FOR SOT-23 0.106 (2.692) Recommended Minimum Pads Dimensions in Inches/(mm) 0.022 (0.559) 0.049 (1.245) 0.029 (0.724) 0.037 (0.950) 0.053 (1.341) 0.097 (2.459) E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw MMFTP84 A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw MMFTP84 A ll data sheet.com