SMC3401S-TRG

SMC3401S-TRG VBSEMI | Alldatasheet

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Technical content

P-Channel 30 V (D-S) MOSFET

FEATURES

• T r e n c h F E T® Power MOSFET  100 % R g Tested

APPLICATIONS

 For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter Notes: a. Based on T C = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 166 °C/W. PRODUCT SUMMARY VDS (V) R DS(on) () Typ. ID (A)a Qg (Typ.) - 30 0.046 at VGS = - 10 V - 5.6 11.4 nC0.049 at VGS = - 6 V - 5 0.054 at VGS = - 4.5 V -4.5 G TO-236 (SOT-23) S D Top View S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS - 30 VGate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 5.6 A TC = 70 °C - 5.1 TA = 25 °C - 5.4b,c TA = 70 °C - 4.3b,c Pulsed Drain Current (t = 100 µs) IDM - 18 Continous Source-Drain Diode Current TC = 25 °C IS - 2.1 TA = 25 °C - 1b,c Maximum Power Dissipation TC = 25 °C PD 2.5 WTC = 70 °C 1.6 TA = 25 °C 1.25b,c TA = 70 °C 0.8b,c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb,d t  5 s RthJA 75 100 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 40 50 SMC3401S-TRG www.VBsemi.com g A ll data sheet.com

Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 30 V VDS Temperature Coefficient VDS/TJ ID = - 250 µA - 19 mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ 4 Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = - 250 µA - 0.5 - 2.0 Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 30 V, VGS = 0 V - 1 µAVDS = - 30 V, VGS = 0 V, TJ = 55 °C - 5 On-State Drain Currenta ID(on) VDS - 5 V, VGS = - 10 V - 2.5 A Drain-Source On-State Resistancea RDS(on) VGS =- 10 V, ID = - 4.4 A 0.046 VGS =- 6 V, ID = - 4 A 0.049 Forward Transconductancea gfs VDS = - 15 V, ID = - 3.4 A 18 S Dynamicb Input Capacitance Ciss VDS = - 15 V, VGS = 0 V, f = 1 MHz 1295 pFOutput Capacitance Coss 150 Reverse Transfer Capacitance Crss 130 Total Gate Charge Qg VDS = - 15 V, VGS = - 10 V, ID = - 5.4 A 24 36 nC VDS = - 15 V, VGS = - 4.5 V, ID = - 5.4 A 11.4 17 Gate-Source Charge Qgs 3.4 Gate-Drain Charge Qgd 3.8 Gate Resistance Rg f = 1 MHz 1.5 7.7 15.4  Tur n-On Delay Time td(on) VDD = - 15 V, RL = 3.5  ID  - 4.3 A, VGEN = - 10 V, Rg = 1  13 20 ns Rise Time tr 48 Turn-Off Delay Time td(off) 38 57 Fall Time tf 61 2 Tur n-On Delay Time td(on) VDD = - 15 V, RL = 3.5  ID  - 4.3 A, VGEN = - 4.5 V, Rg = 1  28 42 Rise Time tr 16 24 Turn-Off Delay Time td(off) 30 45 Fall Time tf 10 20 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S TC = 25 °C - 2.1 A Pulse Diode Forward Current (t = 100 µs) ISM - 80 Body Diode Voltage VSD IS = - 4.3 A, VGS 0 V - 0.8 - 1.2 V Body Diode Reverse Recovery Time trr IF = - 4.3 A, dI/dt = 100 A/µs, TJ = 25 °C 15 23 ns Body Diode Reverse Recovery Charge Qrr 71 4 n C Reverse Recovery Fall Time ta 8 ns Reverse Recovery Rise Time tb 7 SMC3401S-TRG www.VBsemi.com V g A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain Current Gate Charge 0 0.5 1 1.5 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) VGS = 4 V VGS = 4.5 V VGS = 10 V thru 5 V VGS = 3 V 0.0 0.04 0.06 0.08 0 10 20 30 40 50 RDS(on) - On-Resistance (Ω) ID - Drain Current (A) VGS = 4.5 V VGS = 6 V VGS = 10 V 0 5 10 15 20 25 VGS - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VDS = 24 V VDS = 15 V VDS = 8 V ID = 5.4 A Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0.5 1.5 0 0.6 1.2 1.8 2.4 3 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) TC = 25 °C TC = 125 °C TC = - 55 °C 450 900 1350 1800 0 6 12 18 24 30 C - Capacitance (pF) VDS - Drain-to-Source Voltage (V) Ciss Coss Crss 0.7 0.9 1.1 1.3 1.5 - 50 - 25 0 25 50 75 100 125 150 RDS(on) - On-Resistance (Normalized) TJ - Junction Temperature (°C) ID = 5.4 A VGS = 10 V, 6 V VGS = 4.5 V SMC3401S-TRG www.VBsemi.com g A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage 0.1 100 IS - Source Current (A) VSD - Source-to-Drain Voltage (V) TJ = 150 °C TJ = 25 °C 1.25 1.5 1.75 - 50 - 25 0 25 50 75 100 125 150 VGS(th) (V) TJ - Temperature (°C) ID = 250 μA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power (Junction-to-Ambient) 0.000 0.020 0.040 0.060 0.080 2 4 6 8 10 RDS(on) - On-Resistance (Ω) VGS - Gate-to-Source Voltage (V) TJ = 125 °C TJ = 25 °C ID = 5.4 A 0.01 0.1 1 10 100 1000 Time (s) Power (W) TA =2 5 ° C Safe Operating Area, Junction-to-Ambient 0.001 0.01 0.1 0.1 1 10 100 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 ms Limited by RDS(on)* 1 ms TA = 25 °C Single Pulse BVDSS Limited 10 ms 100 μs 10s, 1 s DC SMC3401S-TRG www.VBsemi.com g A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) * The power dissipation P D is based on T J(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 2.2 3.4 4.6 5.8 0 25 50 75 100 125 150 ID - Drain Current (A) TC - Case Temperature (°C) Power, Junction-to-Foot 0.62 1.24 1.86 2.48 3.1 0 25 50 75 100 125 150 Power (W) TC - Case Temperature (°C) Power, Junction-to-Ambient 0.0 0.3 0.5 0.8 1.0 0 25 50 75 100 125 150 Power (W) TA - Ambient Temperature (°C) SMC3401S-TRG www.VBsemi.com g A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 1 10 100010-110-4 100 0.2 0.1 Square WaveP ulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 166 °C/W 3. TJM -T A =P DMZthJA(t) 4. Surface Mounted Duty Cycle = 0.5 Single Pulse 0.02 0.05 Normalized Thermal Transient Impedance, Junction-to-Foot 10-3 10-2 10110-110-4 0.2 0.1 Duty Cycle = 0.5 Square WaveP ulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 0.05 Single Pulse 0.02 SMC3401S-TRG www.VBsemi.com g A ll data sheet.com

SOT-23 (TO-236): 3-LEAD b EE1 S e D A2A A1 C Seating Plane 0.10 mm 0.004" C C L q Gauge Plane Seating Plane 0.25 mm Dim MILLIMETERS INCHES Min Max Min Max A 0.89 1.12 0.035 0.044 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 0.055 e 0.95 BSC 0.0374 Ref e1 1.90 BSC 0.0748 Ref L 0.40 0.60 0.016 0.024 L1 0.64 Ref 0.025 Ref S 0.50 Ref 0.020 Ref q 3°8 ° 3°8 ° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 SMC3401S-TRG www.VBsemi.com g A ll data sheet.com

RECOMMENDED MINIMUM PADS FOR SOT-23 0.106 (2.692) Recommended Minimum Pads Dimensions in Inches/(mm) 0.022 (0.559) 0.049 (1.245) 0.029 (0.724) 0.037 (0.950) 0.053 (1.341) 0.097 (2.459) SMC3401S-TRG www.VBsemi.com g A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. MaterialCategoryPolicy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronicequipment(EEE)-modification,unlessotherwisespecifiedasinconsistent.(www.VBsemi.com) PleasenotethatsomedocumentsmaystillrefertoTaiwanVBsemiRoHSDirective2002/95/EC.We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65/. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conformtoconfirmcompliancewithIEC61249-2-21standardlevelJS709A. SMC3401S-TRG www.VBsemi.com A ll data sheet.com