STD6NF10-1 VBSEMI | Alldatasheet

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Technical content

FEATURES

  • Halogen-free According to IEC 61249-2-21 Definition
  • Available in Tape and Reel
  • Dynamic dV/dt Ra ting
  • Repetitive Avalanche Rated
  • 175 °C Operating Temperature
  • Fast Switching
  • Ease of Paralleling Notes a. Repetitive rating; pulse widt h limited by maximum junction temperature (see fig. 11). c. I SD  9.2 A, dI/dt  110 A/μs, VDD  VDS, TJ  175 °C. PRODUCT SUMMARY VDS (V) 100 RDS(on) ()V GS = 10 V 0.20 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single N-Channel MOSFET G D S Available Available ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at 10 V TC = 25 °C ID ATC = 100 °C 7.5 Pulsed Drain Currenta IDM 37 Linear Derating Factor 0.40 W/°C Linear Derating Factor (PCB Mount) 0.025 S ingle Pulse Avalanche Energyb EAS 200 mJ Avalanche Currenta IAR 9.2 A Repetitive Avalanche Energya EAR 6.0 mJ Maximum Power Dissipation TC = 25 °C PD 60 W Maximum Power Dissipation (PCB Mount) TA = 25 °C 3.7 Peak Diode Recovery dV/dtc dV/dt 5.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C Soldering Recommendations (Peak Temperature) For 10 s 300d N-Channel 100-V (D-S) MOSFET TO-251 SGD Top View Drain Connected to Drain-Tab E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STD6NF10-1 A ll data sheet.ocm

a. Repetitive rating; pulse widt h limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. THERMAL RESISTANCE RATING S PARAMETER SYMBOL TYP. MAX. UNIT Maximum Juncti on-to-Ambient RthJA -6 2 °C/WMaximum Junction-to-Ambient  (PCB Mount)a RthJA -4 0 Maximum Junction-to-Case ( Drain) RthJC -2 .5 SPECIFICATIONS (TJ = 25 °C, unless othe rwise noted) PARAMETER SYMB OL TE ST CONDITIONS MIN. TYP. MAX. UNIT Static Drain- Source Breakdown Voltage VDS VGS = 0, ID = 250 μA 100 - - V VDS Temperature Coefficient VDS/TJ Reference to 25 °C, I D = 1 mA - 0.13 - V/°C Ga te-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 1.0 - 3.0 V Gate-Source Leakage IGSS V GS = ± 20 V - - ± 100 nA Ze ro Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V - - 25 μA VDS = 80 V, VGS = 0 V, TJ = 150 °C - - 250 Drain-So urce On-State Resistance RDS(on) V GS = 10 V ID = 5.5 Ab - 0.20 -  Forward Transc onductance gfs VDS = 50 V, ID = 5.5 Ab 2.7 - - S Dynamic Input Capacitance C iss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 360 - pFOutput C apacitance Coss - 150 - Rever se Transfer Capacitance Crss -3 4- Total Gate Charge Qg VGS = 10 V ID = 9.2 A, VDS = 80 V, see fig. 6 and 13b -- 1 6 nC Gate-Sou rce Charge Qgs -- 4 . 4 Gate-Drain Charge Qgd -- 7 . 7 Turn-On Dela y Time td(on) VDD = 50 V, ID = 9.2 A, Rg = 18 , RD = 5.2 , see fig. 10b -8 . 8- ns Rise Time tr -3 0- Turn-Off De lay Time td(off) -1 9- Fall Ti me tf -2 0- Intern al Drain Inductance LD Between lea 6 mm (0.25") from package and center of die contact -4 . 5- nH Internal Source Inductance LS -7 . 5- Drain-Source Bod y Diode Characteristics Continuous Source-Drain Diode Current I S MOSFET symbol showin g the integral reverse p - n junction diode -- 9 . 2 A Pulsed Diode Forward Currenta ISM -- 3 7 Body Diod e Voltage VSD TJ = 25 °C, IS = 9.2 A, VGS = 0 Vb -- 1 . 8 V Body Diode Re verse Recovery Time trr TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/μsb - 110 260 ns Body Diode Reverse Recovery Charge Q rr -0 . 5 3 1 . 3 μ C Forward Turn-On Time ton Intrinsic turn-on time is negligible (tur n-on is dominated by LS and LD) D S G S D G E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STD6NF10-1 A ll data sheet.ocm

CTERISTICS (25 °C, unless otherwise noted) Fig. 1 - Typi cal Output Characteristics, TC = 25 °C Fig. 2 - Typic al Output Characteristics, TC = 175 °C Fig. 3 - Typ ical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature Bottom Top VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V 20 µs Pulse Width TC = 25 °C 4.5 V VDS, Drain-to-Source Voltage (V) ID, Drain Current (A) 101 100 10-1 100 101 91018_01 VDS, Drain-to-Source Voltage (V) ID, Drain Current (A)

4.5 VBottom

8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V 20 µs Pulse Width TC = 175 °C 101 100 10-1 100 101 20 µs Pulse Width VDS = 50 V ID, Drain Current (A) VGS, Gate-to-Source Voltage (V) 56 7891 04 25 °C 175 °C 101 100 91018_03 ID = 9.2 A VGS = 10 V 3.0 0.0 0.5 1.0 1.5 2.0 2.5 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) RDS(on), Drain-to-Source On Resistance (Normalized) 180 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STD6NF10-1 A ll data sheet.ocm

Fig. 5 - Typica l Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area 750 600 450 300 150 100 101 Capacitance (pF) VDS, Drain-to-Source Voltage (V) Ciss Crss Coss VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd 91018_05 QG, Total Gate Charge (nC) VGS, Gate-to-Source Voltage (V) 0 4 2016128 ID = 9.2 A For test circuit see figure 13 VDS = 20 V VDS = 50 V VDS = 80 V 91018_06 101 100 VSD, Source-to-Drain Voltage (V) ISD, Reverse Drain Current (A) 25 °C 175 °C VGS = 0 V 10-1 91018_07 102 10 µs 100 µs 1 ms 10 ms Operation in this area limited by RDS(on) VDS, Drain-to-Source Voltage (V) ID, Drain Current (A) TC = 25 °C TJ = 175 °C Single Pulse0.1 103 0.1 25 102 25 103 91018_08 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STD6NF10-1 A ll data sheet.ocm

Fig. 9 - Maximum Drai n Current vs. Case Temperature Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case ID, Drain Current (A) TC, Case Temperature (°C) 25 17515010075 50 125 91018_09 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % RD VGS Rg D.U.T. 10 V VDS VDD VDS 90 % 10 % VGS td(on) tr td(off) tf 0.1 10-2 10-5 10-4 10-3 10-2 0.1 1 10 PDM t1, Rectangular Pulse Duration (s) Thermal Response (ZthJC) Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC Single Pulse (Thermal Response) 0 - 0.5 0.2 0.1 0.05 0.02 0.01 91018_11 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STD6NF10-1 A ll data sheet.ocm

Fig. 12a - Unclam ped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit Rg IAS 0.01 Ωtp D.U.T. L VDS - VDD 10 V Vary tp to obtain required IAS IAS VDS VDD VDS tp 600 100 200 300 400 500 25 15012510075 50 Starting TJ, Junction Temperature (°C) EAS, Single Pulse Energy (mJ) Bottom Top ID 3.8 A 6.5 A 9.2 A VDD = 25 V 175 91018_12c QGS QGD QG VG Charge 10 V D.U.T. 3 mA VGS VDS IG ID 0.3 µF 0.2 µF 50 kΩ 12 V Current regulator Current sampling resistors Same type as D.U.T. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STD6NF10-1 A ll data sheet.ocm

Fig. 14 - For N-Channel P.W. Period dI/dt Diode recovery dV/dt Ripple ≤ 5 % Body diode forward drop Re-applied voltage Reverse recovery current Body diode forward current VGS = 10 Va ISD Driver gate drive D.U.T. lSD waveform D.U.T. VDS waveform Inductor current D = P.W. Period Peak Diode Recovery dV/dt Test Circuit VDD  dV/dt controlled by Rg  Driver same type as D.U.T.  ISD controlled by duty factor “D”  D.U.T. - device under test D.U.T. Circuit layout considerations  Low stray inductance  Ground plane  Low leakage inductance current transformer R g Note a. VGS = 5 V for logic level devices VDD E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STD6NF10-1 A ll data sheet.ocm

Note: Dimension L3 is for reference only. b e L3 L1 L D c AE /C0084/C0079/C0262/C0050/C0053/C0049/C0065/C0065/C0032 /C0077/C0073/C0076/C0076/C0073/C0077/C0069/C0084/C0069/C0082/C0083/C0073/C0078/C0067/C0072/C0069/C0083 Dim Min Max Min Max A 2.21 2.38 0.087 0.094 A1 0.89 1.14 0.035 0.045 b 0.71 0.89 0.028 0.035 b1 0.76 1.14 0.030 0.045 b2 5.23 5.43 0.206 0.214 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 D 5.97 6.22 0.235 0.245 E 6.48 6.73 0.255 0.265 e 2.28 BSC 0.090 BSC L 3.89 9.53 0.153 0.375 L1 1.91 2.28 0.075 0.090 L2 0.89 1.27 0.035 0.050 L3 1.15 1.52 0.045 0.060 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STD6NF10-1 A ll data sheet.ocm

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STD6NF10-1 A ll data sheet.ocm