10N60C5M IXYS | Alldatasheet

Document overview

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Technical content

Features

 Fast CoolMOS power MOSFET - 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching (UIS)  Fully isolated package

Applications

 Switched mode power supplies (SMPS)  Uninterruptible power supplies (UPS)  Power factor correction (PFC)  Welding  Inductive heating  PDP and LCD adapter MOSFET Symbol Conditions Maximum Ratings V DSS TVJ = 25°C 600 V VGS ± 20 V ID25 ID90 TC = 25°C TC = 90°C 5.4 3.7 A A EAS EAR single pulse repetitive 225 0.3 mJ mJ dV/dt MOSFET dV/dt ruggedness VDS = 0...480 V 5 0 V/ns D G S TO-220 ABFP G D S Fully isolated package N-Channel Enhancement Mode Low R DSon, High VDSS MOSFET Ultra low gate charge ID = 3.4 A; TC = 25°C Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specifi ed) min. typ. max. RDSon VGS = 10 V; ID = 5.2 A 350 385 mΩ VGS(th) VDS = VGS; ID = 0.34 mA 2.5 3 3.5 V IDSS VDS = 600 V; VGS = 0 V TVJ = 25°C TVJ = 125°C tbd 1µ A µA IGSS VGS = ± 20 V; VDS = 0 V 100 nA Ciss Coss VGS = 0 V; VDS = 100 V f = 1 MHz 790 pF pF Qg Qgs Qgd VGS = 0 to 10 V; VDS = 400 V; ID = 5.2 A 22 nC nC nC t d(on) tr td(off) tf VGS = 10 V; VDS = 400 V ID = 5.2 A; RG = 4.3 Ω tbd tbd tbd tbd ns ns ns ns R thJC 3.95 K/W CoolMOS is a trademark of Infi neon Technologies AG.

© 2006 IXYS All rights reserved 2 - 4 0649 IXKP 10N60C5M IXYS reserves the right to change limits, test conditions and dimensions. Advanced Technical Information Source-Drain Diode Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specifi ed) min. typ. max. IS VGS = 0 V 5.2 A VSD IF = 5.2 A; VGS = 0 V 0.9 1.2 V trr QRM IRM IF = 5.2 A; -diF/dt = 100 A/µs; VR = 400 V 260 ns µC A Component Symbol Conditions Maximum Ratings T VJ Tstg operating -40...+150 -40...+150 Symbol Conditions Characteristic Values min. typ. max. RthCH RthJA with heatsink compound thermal resistance junction - ambient 0.50 K/W K/W Weight 2g

© 2006 IXYS All rights reserved 3 - 4 0649 IXKP 10N60C5M IXYS reserves the right to change limits, test conditions and dimensions. Advanced Technical Information TO-220 ABFP Outline 4.5 V 5 V 5.5 V 6 V 7 V 8 V 10 V 20 V 0 5 10 15 20 V DS [V] I D ]A[ 4.5 V 5 V 5.5 V 6 V 7 V 8 V 10 V 20 V 0 5 10 15 20 V DS [V] I D ]A[ TJ = 25°C VGS = VGS = TJ = 150°C Ø P A H Q D E L bb1 c e 04 0 8 0 1 2 0 1 6 0 TC [°C] Ptot [W ]

© 2006 IXYS All rights reserved 4 - 4 0649 IXKP 10N60C5M IXYS reserves the right to change limits, test conditions and dimensions. Advanced Technical Information typ 98 % 0.2 0.4 0.6 0.8 1.2 -60 -20 20 60 100 140 180 T j [°C] R )no(SD [Ω] 25 °C 150 °C 02468 1 0 V GS [V] I D ]A[ 25 °C150 °C 25 °C, 98% 150 °C, 98% 10 2 10 1 10 0 10 -1 00 . 511 . 52 V SD [V] I F ]A[ 120 V 400 V 0 5 10 15 20 Q gate [nC] V SG ]V[ Ciss Coss Crss 10 5 10 4 10 3 10 2 10 1 10 0 05 0 1 0 0 1 5 0 2 0 0 V DS [V] C] Fp[ 100 150 200 250 20 60 100 140 180 T j [°C] E SA ]Jm[ 540 580 620 660 700 -60 -20 20 60 100 140 180 T j [°C] V )SSD(RB ]V[ VDS = TJV = 150°C ID = 5.2 A VGS = 10 V VDS > 2·RDS(on) max · ID TJ = TJ = VDS = VGS = 0 V f = 1 MHz ID = 3.4 A ID = 0.25 mA ID = 5.2 A pulsed 5 V 5.5 V 6 V 6.5 V 7 V 20 V 0.4 0.8 1.2 1.6 0 5 10 15 20 I D [A] R )no(SD [Ω] Fig. 4 Drain-source on-state resistanceFig. 3 Typ. drain-source on-state resistance characteristics of IGBT Fig. 6 Forward characteristic of reverse diode Fig. 7 Typ. gate charge Fig. 9 Avalanche energy Fig. 10 Drain-source breakdown voltage Fig. 5 Typ. transfer characteristics Fig. 8 Typ. capacitances