2N3501L SEMICOA

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

Qual Level: JAN - JANS Data Sheet No. 2N3501L Generic Part Number: 2N3500L REF: MIL-PRF-19500/366 Features:

  • General-purpose silicon transistor for switching and amplifier appli- cations.
  • Housed in TO-5 case.
  • Also available in chip form using the 5620 chip geometry.
  • The Min and Max limits shown are per MIL-PRF-19500/366 which Semicoa meets in all cases. Rating Symbol Rating Unit Collector-Emitter voltage V CEO 150 V Collector-Base Voltage V CBO 150 V Emitter-Base voltage V EBO 6.0 V Collector Current, Continuous IC 300 mA Power Dissipation, T A = 25 o C 5.0 mW Derate above 25 o C 28.8 mW/ o C Operating Junction Temperature T J -65 to +200 o C Storage Temperature T STG -65 to +200 o C Maximum Ratings T C = 25 o C unless otherwise specified P D TO-5

Data Sheet No. 2N3501L OFF Characteristics Symbol Min Max Unit Collector-Base Breakdown Voltage IC = 10 µA Collector-Emitter Breakdown Voltage IC = 10 mA Emitter-Base Breakdown Voltage IE = 10 µA Collector-Base Cutoff Current V CB = 75 V Emitter-Base Cutoff Current V EB = 4 V IEBO --- 25 nA ICBO --- 50 nA VV (BR)EBO 6.0 --- V (BR)CEO 150 --- V

Electrical Characteristics

T C = 25 o C unless otherwise specified V (BR)CBO 150 --- V ON Characteristics Symbol Min Max Unit Forward Current Transfer Ratio IC = 100 µA, V CE = 10 V (pulsed) h FE1 35 --- --- IC = 1.0 mA, V CE = 10 V (pulsed) h FE2 50 --- --- IC = 10 mA, V CE = 10 V (pulsed) h FE3 75 --- --- IC = 150 mA, V CE = 10 V (pulsed) h FE4 100 300 --- IC = 300 mA, V CE = 10 V (pulsed) h FE5 20 --- --- Base-Emitter Saturation Voltage IC = 10 mA, I B = 1.0 mA V BE(sat)1 --- 0.8 V dc IC = 150 mA, I B = 15 mA V BE(sat)2 --- 1.2 V dc Collector-Emitter Saturation Voltage IC = 10 mA, I B = 1.0 mA V CE(sat)1 --- 0.2 V dc IC = 150 mA, I B = 15 mA V CE(sat)2 --- 0.4 V dc Small Signal Characteristics Symbol Min Max Unit Short Circuit Forward Current Transfer Ratio IC = 10 mA, V CE = 10 V, f = 1 kHz Magnitude of Common Emitter, Small Signal, Short Circuit Forward Current Transfer Ratio V CE = 20 V, I C = 20 mA, f = 100 MHz Open Circuit Output Capacitance V CB = 10 V, I E = 0, 100 kHz < f < 1 MHz Input Capacitance, Output Open Circuited V EB = 0.5 V, I C = 0, 100 kHz < f < 1 MHz Noise Figure V CE = 10 V, I C = 0.5 mA, Rg = 1 kOhm, 1 kHz Noise Figure V CE = 10 V, I C = 0.5 mA, Rg = 1 kOhm, 1 kHz AC h FE 75 375 --- NF --- 6.0 dB NF --- 16 dB pF C IBO --- 80 pF C OBO --- 8.0 Switching Characteristics Symbol Min Max Unit Saturated Turn On Switching time to 90% IC = 150 mA, I B1 = 15 mA, V EB = 2 V Saturated Turn Off Switching time to 10% IC = 150 mA, I B2 = -I B1 = 15 mA tON --- 115 ns 1150 nstOFF ---