2N3866 CENTRAL

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Technical content

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3866 and 2N3866A are Silicon NPN RF Transistors, mounted in a hermetically sealed package, designed for high frequency amplifier and oscillator applications. MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL UNITS Collector-Base Voltage V CBO 55 V Collector-Emitter Voltage V CEO 30 V Emitter-Base Voltage V EBO 3.5 V Continuous Collector Current I C 0.4 A Continuous Base Current I B 2.0 A Power Dissipation (TC=25°C) P D 5.0 W Operating and Storage Junction Temperature T J, Tstg -65 to +200 °C Thermal Resistance ΘJC 35 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICEO V CE=28V 20 μA ICEV V CE=55V, VBE(OFF)=1.5V 0.1 mA ICEV V CE=30V, VBE(OFF)=1.5V, TC=200°C 5.0 mA IEBO V EB=3.5V 0.1 mA BVCER I C=5.0mA, RBE=10Ω 55 V BVCBO I C=500μA 55 V BVCEO I C=5.0mA 30 V BVEBO I E=100μA 3.5 V VCE(SAT) I C=100mA, IB=20mA 1.0 V hFE V CE=5.0V, I C=50mA (2N3866) 10 200 hFE V CE=5.0V, IC=50mA (2N3866A) 25 200 hFE V CE=5.0V, IC=360mA 5.0 fT V CE=15V, IC=50mA, f=200MHz (2N3866) 500 MHz fT V CE=15V, IC=50mA, f=200MHz (2N3866A) 800 MHz Cob V CB=28V, IE=0, f=1.0MHz 3.0 pF GPE V CC=28V, Pout=1.0W, f=400MHz (Figure 1) 10 dB η V CC=28V, Pout=1.0W, f=400MHz (Figure 1) 45 % TO-39 CASE R2 (15-September 2010) www.centralsemi.com

Figure 1. 400MHz Test Circuit