2N6987_02 SEMICOA

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

Features

  • Hermetically sealed Cerdip ceramic
  • Also available in chip configuration
  • Chip geometry 0600
  • Reference document: MIL-PRF-19500/558 Benefits
  • Qualification Levels: JAN, JANTX, JANTXV and JANS
  • Radiation testing available Absolute Maximum Ratings TC = 25°C unless otherwise specified Parameter Symbol Rating Unit Collector-Emitter Voltage V CEO 60 Volts Collector-Base Voltage V CBO 60 Volts Emitter-Base Voltage V EBO 5 Volts Collector Current, Continuous I C 600 mA Power Dissipation, TA = 25OC Derate linearly above 25OC PT 1.5 8.57 W mW/°C Operating Junction Temperature T J -65 to +200 °C Storage Temperature T STG -65 to +200 °C

Copyright 2002 Semicoa Semiconductors, Inc. www.SEMICOA.com 2N6987 Silicon PNP Transistor Data Sheet

ELECTRICAL CHARACTERISTICS

characteristics specified at TA = 25°C Off Characteristics Parameter Symbol Test Conditions Min Typ Max Units Collector-Emitter Breakdown Voltage V (BR)CEO I C = 10 mA 60 Volts Collector-Base Cutoff Current ICBO1 ICBO2 VCB = 60 Volts VCB = 50 Volts 10 µA nA Collector-Base Cutoff Current I CBO3 VCB = 50 Volts, TA = 150°C 10 µA Emitter-Base Cutoff Current IEBO1 IEBO2 VEB = 5 Volts VEB = 4 Volts 10 µA nA On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% Parameter Symbol Test Conditions Min Typ Max Units DC Current Gain hFE1 hFE2 hFE3 hFE4 hFE5 hFE6 IC = 0.1 mA, VCE = 10 Volts IC = 1.0 mA, VCE = 10 Volts IC = 10 mA, VCE = 10 Volts IC = 150 mA, VCE = 10 Volts IC = 500 mA, VCE = 10 Volts IC = 1.0 mA, VCE = 10 Volts TA = -55°C 100 100 100 450 300 Base-Emitter Saturation Voltage VBEsat1 VBEsat2 IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 1.3

2.6 Volts

Collector-Emitter Saturation Voltage VCEsat1 VCEsat2 IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 0.4

1.6 Volts

Parameter Symbol Test Conditions Min Typ Max Units Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio |hFE| VCE = 20 Volts, IC = 20 mA, f = 100 MHz 2 Small Signal Short Circuit Forward Current Transfer Ratio hFE VCE = 10 Volts, IC = 1 mA, f = 1 kHz 100 Open Circuit Output Capacitance C OBO VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz 8 pF Open Circuit Input Capacitance C IBO VEB = 2 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz 30 pF Transistor to Transistor Resistance |R T-T| |V T-T| = 500 Volts 10 10 Ω Switching Characteristics Saturated Turn-On Time t ON 45 ns Saturated Turn-Off Time t OFF 300 ns