2N720AS SEMICOA

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

Features

  • Hermetically sealed TO-18 metal can
  • Also available in chip configuration
  • Chip geometry 4500
  • Reference document: MIL-PRF-19500/182 Benefits
  • Qualification Levels: JAN, JANTX, JANTXV
  • Radiation testing available Absolute Maximum Ratings TC = 25°C unless otherwise specified Parameter Symbol Rating Unit Collector-Emitter Voltage VCEO 80 Volts Collector-Base Voltage VCBO 120 Volts Emitter-Base Voltage VEBO 7 Volts Collector Current, Continuous IC 500 mA Power Dissipation, TA = 25OC Derate linearly above 37.5OC PT 0.5 3.08 W mW/°C Power Dissipation, TC = 25OC Derate linearly above 25OC PT 1.8 10.3 W mW/°C Operating Junction Temperature Storage Temperature TJ TSTG -65 to +200 °C Thermal Resistance RθJA 325 °C/W Copyright 2002 Semicoa Semiconductors, Inc. www.SEMICOA.com

Copyright 2002 Semicoa Semiconductors, Inc. www.SEMICOA.com 2N720A Silicon NPN Transistor Data Sheet

ELECTRICAL CHARACTERISTICS

characteristics specified at TA = 25°C Off Characteristics Parameter Symbol Test Conditions Min Typ Max Units Collector-Emitter Breakdown Voltage V(BR)CEO IC = 30 mA 80 Volts Collector-Emitter Breakdown Voltage V(BR)CER IC = 10 mA, RBE = 10 Ω 100 Volts Collector-Base Cutoff Current ICBO1 ICBO2 ICBO3 VCB = 120 Volts VCB = 90 Volts VCE = 90 Volts, TA = 150 OC 100 µA nA µA Emitter-Base Cutoff Current IEBO1 IEBO2 VEB = 7 Volts VEB = 5 Volts 100 µA nA On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% Parameter Symbol Test Conditions Min Typ Max Units DC Current Gain hFE1 hFE2 hFE3 hFE4 IC = 1 mA, VCE = 10 Volts IC = 10 mA, VCE = 10 Volts IC = 150 mA, VCE = 10 Volts IC = 10 mA, VCE = 10 Volts, TA = -55 OC 120 Base-Emitter Saturation Voltage VBEsat IC = 150 mA, IB = 15 mA 1.3 Volts Collector-Emitter Saturation Voltage VCEsat IC = 150 mA, IB = 15 mA 5.0 Volts Dynamic Characteristics Parameter Symbol Test Conditions Min Typ Max Units Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio |hFE| VCE = 10 Volts, IC = 50 mA, f = 20 MHz 3 10 Short Circuit Forward Current Transfer Ratio hFE1 hFE2 f = 1 kHz VCE = 5 Volts, IC = 1 mA VCE = 10 Volts, IC = 5 mA 100 150 Short Circuit Input Impedance hie VCB = 10V, IC = 5mA 4 8 Ω Open Circuit Output Admittance hoe VCB = 10V, IC = 5mA 0.5 µΩ Open Circuit reverse Voltage Transfer Ratio hre VCB = 10V, IC = 5mA 1.5x10-4 Open Circuit Output Capacitance COBO VCB = 10 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz 2 15 pF Switching Characteristics Pulse Response ton + toff 30 ns