Download PDF2N3498_1 MICROSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/366 T4-LDS-0056 Rev. 1 (080812) Page 1 of 3 DEVICES LEVELS 2N3498 2N3499 2N3500 2N3501 JANSM – 3K Rads (Si) 2N3498L 2N3499L 2N3500L 2N3501L JANSD – 10K Rads (Si) 2N3501UB JANSP – 30K Rads (Si) JANSL – 50K Rads (Si) JANSR – 100K Rads (Si) ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol 2N3498* 2N3499* 2N3501* 2N3501* Unit Collector-Emitter Voltage V CEO 100 150 Vdc Collector-Base Voltage V CBO 100 150 Vdc Emitter-Base Voltage V EBO 6.0 6.0 Vdc Collector Current I C 500 300 mAdc Total Power Dissipation @ TA = +25°C @ TC = +25°C PT 1.0 5.0 W W Operating & Storage Junction Temperature Range T J, Tstg -65 to +200 °C THERMAL CHARACTERISTICS Parameters / Test Conditions Symbol Max. Unit Thermal Resistance, Junction-to-Case RθJC 30 °C/W Thermal Resistance, Junction-to-Ambient RθJA 175 °C/W * Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices. 1. Derate linearly 5.71 W/°C for T A > 25°C 2. Derate linearly 28.6 W/°C for TC > 25°C ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 10mAdc 2N3498, 2N3499 2N3500, 2N3501 V (BR)CEO 100 150 Vdc Collector-Base Cutoff Current VCB = 50Vdc VCB = 75Vdc VCB = 100Vdc VCB = 150Vdc 2N3498, 2N3499 2N3500, 2N3501 2N3498, 2N3499 2N3500, 2N3501 ICBO ηAdc ηAdc μAdc μAdc TO-5* 2N3498L, 2N3499L 2N2500L, 2N3501L TO-39* (TO-205AD) 2N3498, 2N3499 2N3500, 2N3501
3 PIN
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/366 T4-LDS-0056 Rev. 1 (080812) Page 2 of 3 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERISTICS Emitter-Base Cutoff Current VEB = 4.0Vdc VEB = 6.0Vdc IEBO 25 ηAdc μAdc ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 0.1mAdc, VCE = 10Vdc 2N3498, 2N3500 2N3499, 2N3501 IC = 1.0mAdc, VCE = 10Vdc 2N3498, 2N3500 2N3499, 2N3501 IC = 10mAdc, VCE = 10Vdc 2N3498, 2N3500 2N3499, 2N3501 IC = 150mAdc, VCE = 10Vdc 2N3498, 2N3500 2N3499, 2N3501 100 120 300 IC = 300mAdc, VCE = 10Vdc 2N3500 2N3501 IC = 500mAdc, VCE = 10Vdc 2N3498 2N3499 hFE Collector-Emitter Saturation Voltage IC = 10mAdc, IB = 1.0mAdc IC = 300mAdc, IB = 30mAdc IC = 150mAdc, IB = 15mAdc All Types 2N3498, 3N3499 2N3500, 2N3501 VCE(sat) 0.2 0.6 0.4 Vdc Base-Emitter Saturation Voltage IC = 10mAdc, IB = 1.0mAdc IC = 300mAdc, IB = 30mAdc IC = 150mAdc, IB = 15mAdc All Types 2N3498, 3N3499 2N3500, 2N3501 VBE(sat) 0.8 1.4 1.2 Vdc DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Magnitude, Forward Current Transfer Ratio IC = 20mAdc, VCE = 20Vdc, f = 100MHz |hfe| 1.5 8.0 Output Capacitance VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz 2N3498, 2N3499 2N3500, 2N3501 Cobo 10 8.0 pF Input Capacitance VEB = 0.5Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz Cibo 80 pF
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/366 T4-LDS-0056 Rev. 1 (080812) Page 3 of 3 SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Turn-On Time VEB = 5Vdc; IC = 150mAdc; IB1 = 15mAdc t on 115 ηs Turn-Off Time IC = 150mAdc; IB1 = IB2 = 15mAdc toff 1150 ηs SAFE OPERATING AREA DC Tests TC = +25°C, tr ≥ 10ηs; 1 Cycle, t = 1.0s Test 1 VCE = 10Vdc, IC = 500mAdc VCE = 16.67Vdc, IC = 300mAdc VCE = 10Vdc, IC = 113mAdc 2N3498, 2N3499 2N3500, 2N3501 2N3501UB Test 2 VCE = 50Vdc, IC = 100mAdc VCE = 50Vdc, IC = 23mAdc All Types 2N3501UB Test 3 VCE = 80Vdc, IC = 40mAdc VCE = 80Vdc, IC = 14mAdc All Types 2N3501UB Clamped Switching TA = +25°C Test 1 IB = 85mAdc, IC = 500mAdc IB = 50mAdc, IC = 300mAdc 2N3498, 2N3499 2N3500, 2N3501 (3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%