2N5002_02 SEMICOA

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

Features

  • Hermetically sealed TO-59 metal can
  • Also available in chip configuration
  • Chip geometry 9202
  • Reference document: MIL-PRF-19500/534 Benefits
  • Qualification Levels: JAN, JANTX, and JANTXV
  • Radiation testing available Absolute Maximum Ratings TC = 25°C unless otherwise specified Parameter Symbol Rating Unit Collector-Emitter Voltage V CEO 80 Volts Collector-Base Voltage V CBO 100 Volts Emitter-Base Voltage V EBO 5.5 Volts Collector Current, Continuous I C 5 A Power Dissipation, TA = 25°C Derate linearly above 25°C PT 2 11.4 W mW/°C Power Dissipation, TC = 25°C Derate linearly above 25°C PT 58 331 W mW/°C Thermal Resistance RθJA RθJC 3 °C/W Operating Junction Temperature T J -65 to +200 °C Storage Temperature T STG -65 to +200 °C

Copyright 2002 Semicoa Semiconductors, Inc. www.SEMICOA.com 2N5002 Silicon NPN Transistor Data Sheet

ELECTRICAL CHARACTERISTICS

characteristics specified at TA = 25°C Off Characteristics Parameter Symbol Test Conditions Min Typ Max Units Collector-Emitter Breakdown Voltage V (BR)CEO I C = 100 mA 80 Volts Collector-Emitter Cutoff Current I CEO V CE = 40 Volts 50 µA Collector-Emitter Cutoff Current I CEX VCE = 60 Volts, VEB = 2 Volts, TA = 150°C 500 µA Collector-Emitter Cutoff Current ICES1 ICES2 VCE = 60 Volts VCE = 100 Volts 1 µA mA Emitter-Base Cutoff Current IEBO1 IEBO2 VEB = 4 Volts VEB = 5.5 Volts 1 1 mA Thermal Impedance θJC 10 °C/W On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% Parameter Symbol Test Conditions Min Typ Max Units DC Current Gain hFE1 hFE2 hFE3 hFE4 IC = 50 mA, VCE = 5 Volts IC = 2.5 A, VCE = 5 Volts IC = 5 A, VCE = 5 Volts IC = 2.5 A, VCE = 5 Volts TA = -55°C Base-Emitter Voltage V BE V CE = 5 Volts, IC = 2.5 A 1.45 Volts Base-Emitter Saturation Voltage VBEsat1 VBEsat2 IC = 2.5 A, IB = 250 mA IC = 5 A, IB = 500 mA 1.45 2.20 Volts Collector-Emitter Saturation Voltage VCEsat1 VCEsat2 IC = 2.5 A, IB = 250 mA IC = 5 A, IB = 500 mA 0.75 1.50 Volts Small Signal Characteristics Parameter Symbol Test Conditions Min Typ Max Units Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio |hFE| VCE = 5 Volts, IC = 500 mA, f = 10 MHz 6 Small Signal Short Circuit Forward Current Transfer Ratio hFE VCE = 5 Volts, IC = 100 mA, f = 1 kHz 20 Open Circuit Output Capacitance C OBO VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz 250 pF Switching Characteristics Saturated Turn-On Time Rise Time Fall Time Saturated Turn-Off Time t ON tr tf tOFF IC = 5 A, IB1=IB2 = 500 mA, VBE = 3.7 Volts, RL = 6 Ω 0.5 1.4 0.5 1.5 µs