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6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http: //www.microsemi.com NPN POWER SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/374 T4-LDS-0165 Rev. 1 (100688) Page 1 of 4 DEVICES LEVELS 2N3996 2N3997 2N 3998 2N3999 JAN J A N T X JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage V CEO 80 Vdc Collector-Base Voltage V CBO 100 Vdc Emitter-Base Voltage V EBO 8.0 Vdc Base Current I B 0.5 Adc Collector Current I C 10 (1) Adc Total Power Dissipation @ TA = +25°C (2) 30 W Operating & Storage Junction Temperature Range T J, Tstg -65 to +200 °C Thermal Resistance, Junction-to-Case RθJC 3.33 °C/W Note: (1) This value applies for Tp ≤ 1.0ms, duty cycle ≤ 50% (2) Derate linearly 11.4 mW/°C for TA > +25°C (3) Derate linearly 300 mW/°C for TC > +100°C ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 50mAdc V(BR)CEO 80 Vdc Collector-Emitter Breakdown Voltage IC = 10µAdc V(BR)CBO 100 Vdc Collector-Emitter Cutoff Current VCE = 60Vdc ICEO 10 µAdc Collector-Emitter Cutoff Current V CE = 80Vdc, VBE = 0V ICES 200 ηAdc Emitter-Base Cutoff Current VEB = 5.0Vdc VEB = 8.0Vdc IEBO 200 ηAdc µAdc TO-111 2N3996, 2N3997 TO-59 2N3998, 2N3999
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http: //www.microsemi.com T4-LDS-0165 Rev. 1 (100688) Page 2 of 4 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Unit ON CHARACTERISTICS (2) Forward-Current Transfer Ratio IC = 50mAdc, VCE = 2.0Vdc IC = 1.0Adc, VCE = 2.0Vdc IC = 5.0Adc, VCE = 5.0Vdc 2N3996, 2N3998 hFE 120 IC = 50mAdc, VCE = 2.0Vdc IC = 1.0Adc, VCE = 2.0Vdc IC = 5.0Adc, VCE = 5.0Vdc 2N3997, 2N3999 60 240 Collector-Emitter Saturation Voltage IC = 1.0Adc, IB = 0.1Adc IC = 5.0Adc, IB = 0.5Adc VCE(sat) 0.25 2.0 Vdc Base-Emitter Saturation Voltage IC = 1.0Adc, IB = 0.1Adc IC = 5.0Adc, IB = 0.5Adc VBE(sat) 0.6 1.2 1.6 Vdc DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio I C = 1.0Adc, VCE = 5.0Vdc, f = 10MHz |hfe| 3.0 Output Capacitance VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz Cobo 150 pF SAFE OPERATING AREA DC Tests TC = +100°C, 1 Cycle, t = 1.0s Test 1 VCE = 80Vdc, IC = 0.08Adc Test 2 VCE = 20Vdc, IC = 1.5Adc (4) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http: //www.microsemi.com T4-LDS-0165 Rev. 1 (100688) Page 3 of 4 PACKAGE DIMENSIONS NOTES: 1. Terminal 1, emitter; terminal 2, base; terminal 3, collector; terminal 4, case. 2. Chamfer or undercut on one or both ends of hexagonal portion is optional. 3. The outline contour with the exception of the hexagon is optional within cylinder defined by CD1 and A1. 4. Terminal r can be flattened and pierced or hook type. A visual index is required when the flattened and pierced tab terminal contour (identical to the adjacent terminals) option is used. The case terminal (hook) is mechanically connected to the case. The other three terminals shall be electrically isolated from the case. 5. Angular orientation of terminals with respect to hexagon is optional. 6. HT dimension does not include sealing flanges. 7. SU is the length of incomplete or undercut threads. 8. SD is the pitch diameter of coated threads. Reference: Screw threads standards for Federal Service Handbook H28, part I. 9. Dimensions are in inches. 10. Millimeters are giving for general information only. 11. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. * FIGURE 1. Physical dimensions for transistor types 2N3996 and 2N3997 - Continued. Dimensions Ltr Inches Millimeters Notes Min Max Min Max CH .345 .400 8.76 10.16 A1 .250 6.35 3 CD .370 .437 9.40 11.10 3 CD1 .318 .380 8.08 9.65 HF .424 .437 10.77 11.10 PS .180 .215 4.57 5.46 5 PS1 .080 .110 2.03 2.79 5 HT .090 .140 2.29 3.56 2, 6 OAH .575 .675 14.61 17.15 1 UD .155 .189 3.94 4.80 SL .400 .455 10.16 11.56 SU .078 1.98 7 φT .040 .065 1.02 1.65 φT1 .040 .065 1.02 1.65 4 SD .190-32 UNF-2A 8 Z .002 0.05 Z1 .006 0.15
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http: //www.microsemi.com T4-LDS-0165 Rev. 1 (100688) Page 4 of 4 NOTES: 1. Dimensions are in inches. Millimeters are given for general information only 2. Collector shall be electrically connected to the case. This terminal may be flattened and pierced only when the 90 degree option is used. 3. SD is the pitch diameter of coated threads. Reference: Screw thread standards for Federal Service Handbook H28, part I. 4. The orientation of the terminals in relation to the hex flats is not controlled. 5. All three terminals. 6. The case temperature may be measured anywhere on the seating plane within .125 (3.18 mm) of the stud. 7. Terminal spacing measured at the base seat only. 8. Dimensions PS, PS1, PS2, and PS3 are measured from the centerline of terminals. 9. Maximum unthreaded dimension. 10. This dimension applies to the location of the center line of the terminals. 11. A 90 degree angle lead orientation as shown may be used at the option of the manufacturer. All dimensions of the basic outline except PS, PS1, and the 120lead angle apply to this option. 12. Terminal 1, emitter; terminal 2, base; terminal 3, collector. 13. A slight chamfer or undercut on one or both ends of the hexagonal is optional. 14. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. * FIGURE 2. Physical dimensions for transistor types 2N3998 and 2N3999 Dimensions Ltr Inches Millimeters Notes Min Max Min Max CH .345 .400 8.76 10.16 A1 .250 6.35 CD1 .318 .380 8.08 9.65 CD .370 .437 9.40 11.10 HF .424 .437 10.77 11.10 PS .125 .165 3.18 4.19 4, 7, 8 PS1 .110 .145 2.79 3.68 4, 7 PS2 .090 .140 2.29 3.56 4, 7, 8 PS3 .185 .215 4.70 5.46 4, 7, 8 HT .090 .140 2.29 3.56 OAH .575 .675 14.61 17.15 5 UD .155 .189 3.94 4.80 SL .400 .455 10.16 11.56 SU .078 1.98 9 φT .040 .065 1.02 1.65 φT1 .040 .065 1.02 1.65 SD .190-32 UNF-2A 3