2N3500L_04 SEMICOA

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

Features

  • Hermetically sealed TO-5 metal can
  • Also available in chip configuration
  • Chip geometry 5620
  • Reference document: MIL-PRF-19500/366 Benefits
  • Qualification Levels: JAN, JANTX, and JANTXV
  • Radiation testing available Absolute Maximum Ratings TC = 25°C unless otherwise specified Parameter Symbol Rating Unit Collector-Emitter Voltage VCEO 150 Volts Collector-Base Voltage VCBO 150 Volts Emitter-Base Voltage VEBO 6 Volts Collector Current, Continuous IC 300 mA Power Dissipation, TA = 25OC Derate linearly above 25OC PT 5.71 W mW/°C Thermal Resistance RθJA 175 °C/W Operating Junction Temperature TJ -65 to +200 °C Storage Temperature TSTG -65 to +200 °C Copyright© 2004 Semicoa www.SEMICOA.com

Copyright© 2004 Semicoa www.SEMICOA.com

ELECTRICAL CHARACTERISTICS

characteristics specified at TA = 25°C Off Characteristics Parameter Symbol Test Conditions Min Typ Max Units Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10 mA 150 Volts Collector-Base Cutoff Current ICBO1 ICBO2 ICBO3 VCB = 150 Volts VCB = 75 Volts VCB = 75 Volts, TA = 150°C µA nA µA Collector-Emitter Cutoff Current ICEO VCE = 120 Volts 1 µA Emitter-Base Cutoff Current IEBO1 IEBO2 VEB = 6 Volts VEB = 4 Volts 10 µA nA On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% Parameter Symbol Test Conditions Min Typ Max Units DC Current Gain hFE1 hFE2 hFE3 hFE4 hFE5 hFE7 IC = 0.1 mA, VCE = 10 Volts IC = 1.0 mA, VCE = 10 Volts IC = 10 mA, VCE = 10 Volts IC = 150 mA, VCE = 10 Volts IC = 300 mA, VCE = 10 Volts IC = 150 mA, VCE = 10 Volts TA = -55°C 120 Base-Emitter Saturation Voltage VBEsat1 VBEsat2 IC = 10 mA, IB = 1 mA IC = 150 mA, IB = 15 mA 0.8 1.2 Volts Collector-Emitter Saturation Voltage VCEsat1 VCEsat2 IC = 10 mA, IB = 1 mA IC = 150 mA, IB = 15 mA 0.2 0.4 Volts Dynamic Characteristics Parameter Symbol Test Conditions Min Typ Max Units Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio |hFE| VCE = 20 Volts, IC = 20 mA, f = 100 MHz 1.5 8 Small Signal Short Circuit Forward Current Transfer Ratio hFE VCE = 10 Volts, IC = 10 mA, f = 1 kHz 35 300 Open Circuit Output Capacitance COBO VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz 8 pF Open Circuit Input Capacitance CIBO VEB = 0.5 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz 80 pF Noise Figure NF1 NF2 VCE = 10 Volts, IC = 0.5 mA, f = 1 kHz, Rg = 1 kΩ VCE = 10 Volts, IC = 0.5 mA, f = 10 kHz, Rg = 1 kΩ dB Switching Characteristics Saturated Turn-On Time tON VEB = 5 Volts, IC = 150 mA, IB1 = 15 mA 115 ns Saturated Turn-Off Time tOFF IC = 150 mA, IB1=IB2=15 mA 1,150 ns