X00602MA2AL2

X00602MA KERSEMI | Alldatasheet

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Technical content

0.8A SCRs MAIN FEATURES:

DESCRIPTION

Thanks to highly sensitive triggering levels, the X006 SCR series is suitable for all applications where the available gate current is limited, such as ground fault circuit interrupters, overvoltage crowbar protection in low power supplies, capacitive ignition circuits, ... Symbol Value Unit I T(RMS) 0.8 A V DRM RRM 600 V I GT 200 µA ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit I T(RMS) RMS on-state current (180° conduction angle) Tl = 85°C 0.8 A IT (AV) Average on-state current (180° conduction angle) Tl = 85°C 0.5 A I TSM Non repetitive surge peak on-state current tp = 8.3 ms Tj = 25°C A tp = 10 ms 9 I tI t Value for fusing tp = 10ms Tj = 25°C 0.25 A S dI/dt Critical rate of rise of on-state current I G = 2 x I GT , tr ≤ 100 ns F = 60 Hz Tj = 125°C 50 A/µs I GM Peak gate current tp = 20 µs Tj = 125°C 1 A P G(AV) Average gate power dissipation Tj = 125°C 0.1 W T stg Tj Storage junction temperature range Operating junction temperature range - 40 to + 125 - 40 to + 125 °C G A K AGK TO-92 www.kersemi.com

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) THERMAL RESISTANCES PRODUCT SELECTOR

ORDERING INFORMATION

Symbol Test Conditions X00602MA Unit I GT V D = 12 V R L = 140 Ω MIN. 15 µA MAX. 200 µA V GT MAX. 0.8 V V GD V D = V DRM R L = 3.3 kΩ R GK = 1 kΩ Tj = 125°C MIN. 0.2 V V RG I RG = 10 µA MIN. 5V I H I T = 50 mA R GK = 1 kΩ MAX. 5 mA I L I G = 1 mA R GK = 1 kΩ MAX. 6 mA dV/dt V D = 67 % V DRM R GK = 1 kΩ Tj = 125°C MIN. 25 V/µs V TM I TM = 1 A tp = 380 µs Tj = 25°C MAX. 1.35 V V Threshold voltage Tj = 125°C MAX. 0.85 V R d Dynamic resistance Tj = 125°C MAX. 245 m Ω I DRM I RRM V DRM = V RRM R GK = 1 kΩ Tj = 25°C MAX. 1 µA Tj = 125°C 100 Symbol Parameter Value Unit R th(j-l) Junction to lead (DC) 70 °C/W R th(j-a) Junction to ambient (DC) 150 °C/W Part Number Voltage Sensitivity Package X00602MA 600 V 200 µA TO-92 Part Number Marking Weight Base Quantity Packing mode X00602MA 1AA2 X0602MA 0.2 g 2500 Bulk X00602MA 2AL2 X0602MA 0.2 g 2000 Ammopack X00602MA 5AL2 X0602MA 0.2 g 2000 Tape & reel X 006 02 M A 1AA2 SENSITIVE SCR SERIES CURRENT: 0.8A SENSITIVITY: 02: 200µA VOLTAGE: M: 600V PACKAGE: A: TO-92 Blank PACKING MODE: 1AA2: Bulk 2AL2: Ammopack 5AL2: Tape & reel www.kersemi.com

Fig. 1: Maximum average power dissipation versus average on-state current. Fig. 2-1: Average and D.C. on-state current versus lead temperature. Fig. 2-2: Average and D.C. on-state current versus ambient temperature (device mounted on FR4 with recommended pad layout). Fig. 3: Relative variation of thermal impedance junction to ambient versus pulse duration. Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature. Fig. 5: Relative variation of holding current versus gate-cathode resistance (typical values). 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60 0.65 P(W) a = 180° IT(av)(A) 360° a 0 25 50 75 100 125 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 IT(av)(A) D.C. a = 180° Tlead(°C) 0 25 50 75 100 125 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 IT(av)(A) a = 180° D.C. Tamb( °C) 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 0.01 0.10 1.00 K = [Zth(j-a)/Rth(j-a)] tp(s) -40 -20 0 20 40 60 80 100 120 140 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IGT, IH, IL[Tj] / IGT, IH, IL[Tj = 25 °C] IH & IL IGT Tj(°C) IH[Rgk]/IH[Rgk=1k ]Ω Rgk(k )Ω 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 1E-2 1E-1 1E+0 1E+1 1E+2 www.kersemi.com

Fig. 6: Relative variation of dV/dt immunity versus gate-cathode resistance (typical values). Fig. 7: Relative variation of dV/dt immunity versus gate-cathode capacitance (typical values). Fig. 8: Surge peak on-state current versus number of cycles. Fig. 9: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding value of I²t. Fig. 10: On-state characteristics (maximum values). dV/dt[Rgk]/dV/dt[Rgk=1k ]Ω 1E-2 1E+2 1E+1 1E+0 1E-1 1E-2 1E-1 1E+0 1E+1 Rgk(k )Ω dV/dt[Cgk]/dV/dt[Rgk=1k ]Ω Cgk(nF) 12 5 10 amb=25°C 1 10 100 1000 ITSM(A) Nonrepetitiv e Tjinitial=25°C Repetitiv e T Number of cycles Onecycle tp=10ms 0.01 0.10 1.00 10.00 0.1 1.0 10.0 100.0 ITSM(A),I t(A Tj initial = 25 °C ITSM I t tp(ms) 1E-2 1E-1 1E+0 1E+1 ITM(A) Tj max.: Vto = 0.85V Rd = 245mΩ Tj = Tjmax. Tj = 25°C VTM(V) www.kersemi.com

TO-92 (Plastic) DF a E B A C REF. DIMENSIONS Millimeters Inches A 1.35 0.053 B 4.70 0.185 C 2.54 0.100 D 4.40 0.173 E 12.70 0.500 F 3.70 0.146 a 0.50 0.019 www.kersemi.com