Z00607DA KERSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Symbol Parameter Value Unit I T(RMS) RMS on-state current (360° conduction angle) Tl= 50 °C0 . 8 A I TSM Non repetitive surge peak on-state current j initial = 25°C ) tp = 8.3 ms 10.5 A tp = 10 ms 10 Non repetitive surge peak on-state current j initial = 110°C, full cycle) F = 60Hz 8 I t I t Value for fusing tp = 10 ms 0.5 A s T stg T j Storage and operating junction temperature range - 40, + 150 - 40, + 110 Tl Maximum lead temperature for soldering during 10s 260 °C ABSOLUTE RATINGS (limiting values) I T(RMS) = 0.8A V DRM = 400V and 600V I GT = 5mA

FEATURES

V DRM V RRM Repetitive peak off-state voltage T j = 110°C 400 600 V The Z006607xA triacs are intended for general applications where high gate sensitivity is required.

DESCRIPTION

G TO92 (Plastic) www.kersemi.com

P G (AV) = 0.1 W P GM = 2 W (tp = 20 µs) I GM = 1 A (tp = 20 µs) GATE CHARACTERISTICS (maximum values) Symbol Parameter Value Unit Rth(j-a) Junction to ambient 150 °C/W Rth(j-l) Junction to lead 60 °C/W THERMAL RESISTANCES Symbol Test Conditions Quadrant Sensitivity Unit07 I GT V D =12V (DC) R L =140Ω Tj= 25°C I-II-III MAX 5 mA IV MAX 7 V GT V D =12V (DC) R L =140Ω Tj= 25°C I-II-III-IV MAX 1.5 V V GD V D DRM R L =3.3kΩ Tj= 110°C I-II-III-IV MIN 0.2 V tgt V D DRM I G = 25mA I T = 1.0A dI G /dt = 0.25A/µs Tj= 25°C I-II-III-IV TYP 2 µs I H T = 200 mA Gate open Tj= 25°CM A X 5 m A I L I G = 1.2 I GT Tj= 25°C I-III-IV MAX 10 mA II MAX 20 V TM TM = 1.1A tp= 380µs Tj= 25 °CM A X 1 . 5 V I DRM I RRM V D = V DRM V R = V RRM Tj= 25°CM A X 1 0 µA Tj= 110°CM A X 0 . 1 m A dV/dt * VD=67%V DRM Gate open Tj= 110°CM I N 1 0 V / µs (dV/dt)c *(dI/dt)c = 0.35 A/ms Tj= 110°CM I N 1 . 5 V / µs * For either polarity of electrode A voltage with reference to electrode A

ELECTRICAL CHARACTERISTICS

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 P(W) α=180° α=120° α=90° α =60° α=30° IT(RMS)(A) 180° α α Fig 1: Maximum power dissipation versus RMS on-state current. 0 1 02 03 04 05 06 07 08 09 0 1 0 0 1 1 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 P(W) Tlead (°C) Rth(j-a) Rth(j-l) α=180° 110 Tamb(°C) Fig 2: Correlation between maximum power dissi- pation and maximum allowable temperatures (Tamb and Tlead). Z00607DA / Z00607MA www.kersemi.com

0.1 1.0 10.0 50.0 ITSM(A),I²t(A²s) Tj initial=25°C ITSM I²t tp(ms) Fig 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and cor- responding value of I 0.1 1.0 10.0 ITM(A) Tj=25°C Tj max.: Vto= 0.95 V Rd= 420 mΩ Tj=Tj max. VTM(V) Fig 8: On-state characteristics (maximum values). -40 -20 0 20 40 60 80 100 120 0.0 0.5 1.0 1.5 2.0 2.5 IGT,IH[Tj] / IGT,IH[Tj=25°C] IGT IH Tj(°C) Fig 5: Relative variation of gate trigger current and holding current versus junction temperature (typi- cal values). 1 10 100 1000 ITSM(A) Tj initial=25°C F=50Hz Number of cycles Fig 6: Non repetitive surge peak on-state current versus number of cycles. 0 1 02 03 04 05 06 07 08 09 0 1 0 0 1 1 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 IT(RMS)(A) α=180° Rth(j-a)=Rth(j-l) Rth(j-a)=150°C/W Tamb(°C) Fig 3: RMS on-state current versus ambient tem- perature. 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 0.01 0.10 1.00 K=[Zth(j-a)/Rth(j-a)] tp(s) Fig 4: Relative variation of thermal impedance junction to ambient versus pulse duration. Z00607DA / Z00607MA www.kersemi.com

TO92 (Plastic) DF a E B A C REF. DIMENSIONS Millimeters Inches A1 . 3 5 0 . 0 5 3 B 4.70 0.185 C2 . 5 4 0 . 1 0 0 D 4.40 0.173 E 12.70 0.500 F 3.70 0.146 a 0.45 0.017 Ordering type Marking Package Weight Base qty Delivery mode Z00607DA 1BA2 Z0607DA TO92 0.2g. 2500 Bulk Z00607MA 1BA2 Z0607MA TO92 0.2g. 2500 Bulk Z00607DA / Z00607MA www.kersemi.com