KSM3N60C KERSEMI | Alldatasheet

Document overview

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Technical content

Features

  • 3A, 600V, R DS(on) = 3.4Ω @V GS = 10 V
  • Low gate charge ( typical 10.5 nC)
  • L o w C rss ( typical 5 pF)
  • F a s t s w i t c h i n g
  • 100% avalanche tested
  • Improved dv/dt capability

Description

These N-Channel enhancement mode power field effect transistors are produced using Kersemi proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power s upplies, active power factor correction, electronic lamp ballasts based on half bridge topology. Absolute Maximum Ratings Thermal Characteristics z z z z z z S D G TO-220 Symbol Parameter KSM3N60C Unit V DSS Drain-Source Voltage 600 V I D Drain Current - Continuous (T C = 25°C) - Continuous (T C = 100°C) 1.8 A A I DM Drain Current - Pulsed (Note 1) 12 A V GSS Gate-Source voltage ±30 V E AS Single Pulsed Avalanche Energy (Note 2) 150 mJ I AR Avalanche Current (Note 1) E AR Repetitive Avalanche Energy (Note 1) 7.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3)

4.5 V/ns

P D Power Dissipation (T C = 25°C) - Derate above 25°C 0.62 W W/°C T T STG Operating and Storage Temperature Range -55 to +150 °C T L Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 °C Symbol Parameter Typ. Max. Unit R θJC Thermal Resistance, Junction-to-Case -- 1.67 °C/W R θCS Thermal Resistance, Junction-to-Case 0.5 -- °C/W R θJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W 2014-5-30 www.kersemi.com

Package Marking and Ordering Information

Electrical Characteristics

T C = 25°C unless otherwise noted NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. I AS = 3A, V DD = 50V, L=30mH, R G = 25Ω, Starting T J = 25°C 3. I SD ≤ 3A, di/dt ≤ 200A/µs, V DD ≤ BV DSS , Starting T J = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics Device Marking Device Package Reel Size Tape Width Quantity KSM3N60C KSM3N60C TO-220 - - 50 Symbol Parameter Conditions Min. Typ. Max Units Off Characteristics BV DSS Drain-Source Breakdown Voltage V GS = 0V, I D ∆BV DSS / ∆T J Breakdown Voltage Temperature Coefficient I D = 250µA, Referenced to 25°C- - 0 . 6 - - V / °C I DSS Zero Gate Voltage Drain Current V DS = 600V, V GS = 0V V DS = 480V, T C = 125°C µA µA I GSSF Gate-Body Leakage Current, Forward V GS = 30V, V DS = 0V -- -- 100 nA I GSSR Gate-Body Leakage Current, Reverse V GS = -30V, V DS = 0V -- -- -100 nA On Characteristics V GS(th) Gate Threshold Voltage V DS = V GS , I D = 250µA2 . 0 - - 4 . 0 V R DS(on) Static Drain-Source On-Resistance V GS = 10V, I D g FS Forward Transconductance V DS = 40V, I D = 1.5A (Note 4) -- 3.5 -- S Dynamic Characteristics C iss Input Capacitance V DS = 25V, V GS = 0V, f = 1.0MHz -- 435 565 pF C oss Output Capacitance -- 45 60 pF C rss Reverse Transfer Capacitance -- 5 8 pF Switching Characteristics t d(on) Turn-On Delay Time V DD = 300V, I D = 3A R G = 25Ω (Note 4, 5) -- 12 34 ns t r Turn-On Rise Time -- 30 70 ns t d(off) Turn-Off Delay Time -- 35 80 ns t f Turn-Off Fall Time -- 35 80 ns Q g Total Gate Charge V DS = 480V, I D = 3A V GS = 10V (Note 4, 5) -- 10.5 14 nC Q gs Gate-Source Charge -- 2.1 -- nC Q gd Gate-Drain Charge -- 4.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current -- -- 3 A I SM Maximum Pulsed Drain-Source Diode Forward Current -- -- 12 A V SD Drain-Source Diode Forward Voltage V GS = 0V, I S = 3A -- -- 1.4 V t rr Reverse Recovery Time V GS = 0V, I S = 3A dI F /dt =100A/µs (Note 4) -- 260 -- ns Q rr Reverse Recovery Charge -- 1.6 -- µC KSM3N60C 2014-5-30 www.kersemi.com

Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms KSM3N60C 2014-5-30 www.kersemi.com

Peak Diode Recovery dv/dt Test Circuit & Waveforms KSM3N60C 2014-5-30 www.kersemi.com