KSM32N20C KERSEMI | Alldatasheet

Document overview

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Technical content

Features

  • 28A, 200V, R DS(on) = 0.082Ω @V GS = 10 V
  • Low gate charge ( typical 82.5 nC)
  • Low Crss ( typical 185 pF)
  • F a s t s w i t c h i n g
  • 100% avalanche tested
  • Improved dv/dt capability Absolute Maximum Ratings T C = 25°C unless otherwise noted * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter KSM32N20C KSMF32N20C Units V DSS Drain-Source Voltage 200 V I D Drain Current - Continuous (T C - Continuous (T C I DM Drain Current - Pulsed (Note 1) 112 112 * A V GSS Gate-Source Voltage ± 30 V E AS Single Pulsed Avalanche Energy (Note 2) 955 mJ I AR Avalanche Current (Note 1) 28.0 A E AR Repetitive Avalanche Energy (Note 1) 15.6 mJ dv/dt Peak Diode Recovery dv/dt (Note 3)

5.5 V/ns

P D Power Dissipation (T C = 25°C) 156 50 W - Derate above 25°C 1.25 0.4 W/°C T J , T STG Operating and Storage Temperature Range -55 to +150 °C T L Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter KSM32N20C KSMF32N20C Units R θJC Thermal Resistance, Junction-to-Case 0.8 2.51 °C /W R θJS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C /W R θJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C /W TO-220 TO-220F S D G 2014-6-28 1 www.kersemi.com

Electrical Characteristics

T C = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 1.4mH, I AS = 32A, V DD = 50V, R G = 25 Ω, Starting T J = 25°C 3. I SD ≤ 28A, di/dt ≤ 300A/µs, V DD ≤ BV DSS, Starting T J = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain-Source Breakdown Voltage V GS = 0 V, I D = 250 µA 200 -- -- V ∆BV DSS / ∆T J Breakdown Voltage Temperature Coefficient I D = 250 µA, Referenced to 25°C -- 0.24 -- V/°C I DSS Zero Gate Voltage Drain Current V DS = 200 V, V GS = 0 V -- -- 10 µA V DS = 160 V, T C I GSSF Gate-Body Leakage Current, Forward V GS = 30 V, V DS = 0 V -- -- 100 nA I GSSR Gate-Body Leakage Current, Reverse V GS = -30 V, V DS On Characteristics V GS(th) Gate Threshold Voltage V DS = V GS , I D = 250 µA 2.0 -- 4.0 V R DS(on) Static Drain-Source On-Resistance V GS = 10 V, I D = 14 A -- 0.068 0.082 Ω g FS Forward Transconductance V DS = 40 V, I D = 14 A (Note 4) -- 20 -- S Dynamic Characteristics C iss Input Capacitance V DS = 25 V, V GS = 0 V, f = 1.0 MHz -- 1700 2220 pF C oss Output Capacitance -- 400 520 pF C rss Reverse Transfer Capacitance -- 185 245 pF Switching Characteristics t d(on) Turn-On Delay Time V DD = 100 V, I D = 32 A, R G = 25 Ω (Note 4, 5) -- 25 60 ns t r Turn-On Rise Time -- 270 550 ns t d(off) Turn-Off Delay Time -- 245 500 ns t f Turn-Off Fall Time -- 210 430 ns Q g Total Gate Charge V DS = 160 V, I D = 32 A, V GS = 10 V (Note 4, 5) -- 82.5 110 nC Q gs Gate-Source Charge -- 10.5 -- nC Q gd Gate-Drain Charge -- 44.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current -- -- 28 A I SM Maximum Pulsed Drain-Source Diode Forward Current -- -- 112 A V SD Drain-Source Diode Forward Voltage V GS = 0 V, I S = 28 A -- -- 1.5 V t rr Reverse Recovery Time V GS = 0 V, I S = 32 A, dI F / dt = 100 A/µs (Note 4) -- 265 -- ns Q rr Reverse Recovery Charge -- 2.73 -- µC KSM32N20C/KSMF32N20C 2014-6-28 2 www.kersemi.com

Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms Charge V GS 10V Q g Q gs Q gd 3mA V GS DUT V DS 300nF 50KΩ 200nF12V Same Type as DUT Charge V GS 10V Q g Q gs Q gd 3mA V GS DUT V DS 300nF 50KΩ 200nF12V Same Type as DUT V GS V DS 10% 90% t d(on) t r t on t off t d(off) t f V DD 10V V DS R L DUT R G V GS V GS V DS 10% 90% t d(on) t r t on t off t d(off) t f V DD 10V V DS R L DUT R G V GS E AS =L I AS ----2 BV DSS DD BV DSS V DD V DS BV DSS t p V DD I AS V DS (t) I D (t) Time 10V DUT R G L I D t p E AS =L I AS ----2 AS =L I AS ----2 1----2 BV DSS DD BV DSS V DD V DS BV DSS t p V DD I AS V DS (t) I D (t) Time 10V DUT R G L L I D I D t p KSM32N20C/KSMF32N20C 2014-6-28 6 www.kersemi.com

Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT V DS Driver R G Same Type as DUT V GS

  • dv/dt controlled by R G SD controlled by pulse period V DD L I SD 10V V GS ( Driver ) I SD ( DUT ) V DS ( DUT ) V DD Body Diode Forward Voltage Drop V SD I FM , Body Diode Forward Current Body Diode Reverse Current I RM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width DUT V DS Driver R G Same Type as DUT V GS
  • dv/dt controlled by R G SD controlled by pulse period V DD L L I SD 10V V GS ( Driver ) I SD ( DUT ) V DS ( DUT ) V DD Body Diode Forward Voltage Drop V SD I FM , Body Diode Forward Current Body Diode Reverse Current I RM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width KSM32N20C/KSMF32N20C 2014-6-28 7 www.kersemi.com

4.50 ±0.20 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.40 ±0.20 10.00 ±0.20 1.27 ±0.10 ø3.60 ±0.10 (8.70) 2.80 ±0.10 15.90 ±0.20 10.08 ±0.30 18.95MAX. (1.70) (3.70)(3.00) (1.46) (1.00) (45 9.20 ±0.20 13.08 ±0.20 1.30 ±0.10 1.30 +0.10 –0.05 0.50 +0.10 –0.05 2.54TYP [2.54 ±0.20 2.54TYP [2.54 ±0.20 TO-220 KSM32N20C/KSMF32N20C 2014-6-28 8 www.kersemi.com

(Continued) (7.00) (0.70) MAX1.47 (30 3.30 ±0.10 15.80 ±0.20 15.87 ±0.20 6.68 ±0.20 9.75 ±0.30 4.70 ±0.20 10.16 ±0.20 (1.00x45°) 2.54 ±0.20 0.80 ±0.10 9.40 ±0.20 2.76 ±0.20 0.35 ±0.10 ø3.18 ±0.10 2.54TYP [2.54 ±0.20 2.54TYP [2.54 ±0.20 0.50 +0.10 –0.05 TO-220F KSM32N20C/KSMF32N20C 2014-6-28 9 www.kersemi.com