KSM22N50N KERSEMI | Alldatasheet

Document overview

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Technical content

Features

DS(on) = 0.185Ω ( Typ.)@ V GS = 10V, I D = 11A

  • Low gate charge ( Typ. 49nC)
  • Low C rss ( Typ. 24pF)
  • Fast switching
  • 100% avalanche tested
  • Improve dv/dt capability
  • RoHS compliant

Description

These N-Channel enhancement mode power field effect transistors are produced using Kersemi proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini- mize on-state resistance, prov ide superior switching perfor- mance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power s upplies and active power factor correction. D G S TO-220 MOSFET Maximum Ratings T C = 25 o C unless otherwise noted Thermal Characteristics Symbol Parameter KSM22N50N Units V DSS Drain to Source Voltage 500 V V GSS Gate to Source Voltage ±30 V I D D r a i n C u r r e n t -Continuous (T C = 25 o C) 22 A-Continuous (T C = 100 o C) 13.2 I DM D r a i n C u r r e n t - P u l s e d (Note 1) 88 A E AS Single Pulsed Avalanche Energy (Note 2) 1000 mJ I AR Avalanche Current (Note 1) 22 A E AR Repetitive Avalanche Energy (Note 1) 31.25 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 10 V/ns P D Power Dissipation (T C = 25 o C) 312.5 W - Derate above 25 o C2 . 5 W / o C T J , T STG Operating and Storage Temperature Range -55 to +150 o C T L Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 o C Symbol Parameter KSM22N50N Units R θJC Thermal Resistance, Junction to Case 0.4 o C/WR θCS Thermal Resistance, Case to Sink Typ. 0.5 R θJA Thermal Resistance, Junction to Ambient 62.5 *Drain current limited by maximum junction temperature 2014-7-1 1 www.kersemi.com

Electrical Characteristics

T C = 25 o C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Device Marking Device Package Reel Size Tape Width Quantity KSM22N50N KSM22N50N TO-220 - - 50 Symbol Parameter Test Conditions Min. Typ. Max. Units BV DSS Drain to Source Breakdown Voltage I D = 250µA, V GS = 0V, 500 - - V ∆BV DSS / ∆T J Breakdown Voltage Temperature Coefficient I D = 250µA, Referenced to 25 o C - 0.45 - V/ o C I DSS Zero Gate Voltage Drain Current V DS = 500V, V GS = 0V - - 1 µAV DS = 400V, T C = 125 o C- - 1 0 I GSS Gate to Body Leakage Current V GS = ±30V, V DS = 0V - - ±100 nA V GS(th) Gate Threshold Voltage V GS = V DS , I D = 250µA3 . 0 - 5 . 0 V R DS(on) Static Drain to Source On Resistance V GS = 10V, I D = 11A - 0.185 0.22 Ω g FS Forward Transconductance V DS = 20V, I D = 11A - 24.4 - S C iss Input Capacitance V DS = 25V, V GS = 0V f = 1MHz - 2456 3200 pF C oss Output Capacitance - 351 460 pF C rss Reverse Transfer Capacitance - 24 50 pF Q g(tot) Total Gate Charge at 10V V DS = 400V, I D = 22A V GS = 10V (Note 4) -4 9 6 5 n C Q gs Gate to Source Gate Charge - 15 - nC Q gd Gate to Drain “Miller” Charge - 19 - nC t d(on) Turn-On Delay Time V DD = 250V, I D = 22A R G = 4.7Ω (Note 4) -2 2 5 5 n s t r Turn-On Rise Time - 50 110 ns t d(off) Turn-Off Delay Time - 48 110 ns t f Turn-Off Fall Time - 35 80 ns I S Maximum Continuous Drain to Source Diode Forward Current - - 22 A I SM Maximum Pulsed Drain to Source Diode Forward Current - - 88 A V SD Drain to Source Diode Forward Voltage V GS = 0V, I SD = 22A - - 1.4 V t rr Reverse Recovery Time V GS = 0V, I SD = 22A dI F /dt = 100A/µs - 472 - ns Q rr Reverse Recovery Charge - 6.5 - µC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 4.1mH, I AS = 22A, V DD = 50V, R G = 25Ω, Starting T J = 25°C 3. I SD ≤ 22A, di/dt ≤ 200A/µs, V DD ≤ BV DSS , Starting T J = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics Package Marking and Ordering Information KSM22N50N 2014-7-1 2 www.kersemi.com

Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms KSM22N50N 2014-7-1 5 www.kersemi.com

Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT V DS Dr i v e r R G Sam e Ty pe as D U T V GS

  • dv/ dt cont r ol l ed by R G SD cont r ol l ed by pul se per i od V DD L I SD 10V V GS ( D riv e r ) I SD ( DUT ) V DS ( DUT ) V DD Body D i ode For w ar d Vol t a g e D r op V SD I FM , Body D i ode For w ar d Cur r ent Body D i ode Rever se C ur r ent I RM Body Di ode R ecover y dv/ dt di / dt D = G at e Pul se W i dt h DUT V DS Dr i v e r R G Sam e Ty pe as D U T V GS
  • dv/ dt cont r ol l ed by R G SD cont r ol l ed by pul se per i od V DD L L I SD 10V V GS ( D riv e r ) I SD ( DUT ) V DS ( DUT ) V DD Body D i ode For w ar d Vol t a g e D r op V SD I FM , Body D i ode For w ar d Cur r ent Body D i ode Rever se C ur r ent I RM Body Di ode R ecover y dv/ dt di / dt D = G at e Pul se W i dt h KSM22N50N 2014-7-1 6 www.kersemi.com

4.50 ±0.20 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.40 ±0.20 10.00 ±0.20 1.27 ±0.10 ø3.60 ±0.10 (8.70) 2.80 ±0.10 15.90 ±0.20 10.08 ±0.30 18.95MAX. (1.70) (3.70)(3.00) (1.46) (1.00) (45 9.20 ±0.20 13.08 ±0.20 1.30 ±0.10 1.30 +0.10 –0.05 0.50 +0.10 –0.05 2.54TYP [2.54 ±0.20 2.54TYP [2.54 ±0.20 TO-220 KSM22N50N 2014-7-1 7 www.kersemi.com